AOS Semiconductor Product Reliability Report AOZ8231ADI-12L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOZ8231ADI-12L. Review of the electrical test results confirm that AOZ8231ADI-12L passes AOS quality and reliability requirements for product release. The continuous qualification testing and reliability monitoring program ensure that all outgoing products will continue to meet AOS quality and reliability standards. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Qualification Test Requirements Qualification Tests Result Reliability Evaluation I. Product Description: The AOZ8231ADI-12L is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. -ROHS compliant -Halogen free . Absolute Maximum Ratings Parameter VP-VN Peak Pulse Current (Ipp), tp=8/20uS Storage Temperature (TS) ESD Rating per IEC61000-4-2, contact (1) ESD Rating per IEC61000-4-2, air (2) ESD Rating per Human Body Model (2) Junction Temperature (Tj) 5v 5A -65°C to +150°C ±30kV ±30kV ±30kV -40°C to +85°C Notes: (1) IEC-61000-4-2 discharge with CDischarge=150pF, RDischarge=330Ω8 (2) Human Body Discharge per MIL-STD-883, Method 3015 CDischarge=100pF, RDischarge=1.5kΩ II. Package and Die Information: Product ID AOZ8231ADI-12L Package Type Lead Frame Die attach material Bond wire MSL level Copper, Epoxy Au, 0.8 mil Up to Level 1 DFN 1.0*0.6 2 III. Qualification Tests Requirements • • 2 lot of AOZ8231ADI-12L up to 168hrs of HTRB for new product release. 4 lots of package qual testing (PCT, 500 cycles TC, HAST) for package release to manufacturing. IV. Qualification Tests Result Test Item Test Condition Sample Size Result Comment PreConditioning Per JESD 22-A113 168hrs @85 °C /85%RH+3 cyc reflow@260°C 4 lots (Sum of TC,PCT and HAST) pass HTRB Per JESD 22-A108_B Vdd= 5v Temp = 150°C 2 lots (77 /lot) pass Temperature Cycle -65 °C to +150 °C, air to air (2cyc/hr) 3 lots (77 /lot) pass Pressure Pot 121°C, 29.7psi, RH= 100% 4 lots (77 /lot) pass HAST 130 +/- 2°C, 85%RH, 33.3 psi, at VCC min power dissipation. 3 lot (55 /lot) pass ESD Rating Per IEC-61000-4-2, contact 3 lots (5 /lot) pass ±30kV contact ESD Rating Per IEC-61000-4-2, air discharge 3 lots (5 /lot) pass ±30kV contact The qualification test results confirm that AOZ8231ADI-12L passes AOS quality and reliability requirements for product release. 3 V. Reliability Evaluation FIT rate (per billion): 69 MTTF = 1656 years The presentation of FIT rate for the individual product reliability is restricted by the actual HTRB sample size of the selected product itself and its generic family. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2x (77x168+77x500) x258] = 69 MTTF = 109 / FIT = 1.45 x107hrs= 1656 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB tests H = Duration of HTRB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 258 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 4 130 deg C 150 deg C 2.59 1