Reliability Report

AOS Semiconductor
Product Reliability Report
AOZ8231ADI-12L, rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AOZ8231ADI-12L.
Review of the electrical test results confirm that AOZ8231ADI-12L passes AOS quality and reliability
requirements for product release. The continuous qualification testing and reliability monitoring program
ensure that all outgoing products will continue to meet AOS quality and reliability standards.
Table of Contents:
I.
II.
III.
IV.
V.
Product Description
Package and Die information
Qualification Test Requirements
Qualification Tests Result
Reliability Evaluation
I. Product Description:
The AOZ8231ADI-12L is a one-line bi-directional transient voltage suppressor diode designed to protect voltage
sensitive electronics from high transient conditions and ESD.
-ROHS compliant
-Halogen free
.
Absolute Maximum Ratings
Parameter
VP-VN
Peak Pulse Current (Ipp), tp=8/20uS
Storage Temperature (TS)
ESD Rating per IEC61000-4-2, contact (1)
ESD Rating per IEC61000-4-2, air (2)
ESD Rating per Human Body Model (2)
Junction Temperature (Tj)
5v
5A
-65°C to +150°C
±30kV
±30kV
±30kV
-40°C to +85°C
Notes:
(1) IEC-61000-4-2 discharge with CDischarge=150pF, RDischarge=330Ω8
(2) Human Body Discharge per MIL-STD-883, Method 3015 CDischarge=100pF, RDischarge=1.5kΩ
II. Package and Die Information:
Product ID
AOZ8231ADI-12L
Package Type
Lead Frame
Die attach material
Bond wire
MSL level
Copper,
Epoxy
Au, 0.8 mil
Up to Level 1
DFN 1.0*0.6
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III. Qualification Tests Requirements
•
•
2 lot of AOZ8231ADI-12L up to 168hrs of HTRB for new product release.
4 lots of package qual testing (PCT, 500 cycles TC, HAST) for package release to manufacturing.
IV. Qualification Tests Result
Test Item
Test Condition
Sample Size
Result Comment
PreConditioning
Per JESD 22-A113
168hrs @85 °C
/85%RH+3 cyc
reflow@260°C
4 lots (Sum of
TC,PCT and
HAST)
pass
HTRB
Per JESD 22-A108_B
Vdd= 5v
Temp = 150°C
2 lots (77 /lot)
pass
Temperature
Cycle
-65 °C to +150 °C,
air to air (2cyc/hr)
3 lots (77 /lot)
pass
Pressure Pot
121°C, 29.7psi,
RH= 100%
4 lots (77 /lot)
pass
HAST
130 +/- 2°C, 85%RH,
33.3 psi, at VCC min
power dissipation.
3 lot (55 /lot)
pass
ESD Rating
Per IEC-61000-4-2,
contact
3 lots (5 /lot)
pass
±30kV contact
ESD Rating
Per IEC-61000-4-2, air
discharge
3 lots (5 /lot)
pass
±30kV contact
The qualification test results confirm that AOZ8231ADI-12L passes AOS quality and reliability
requirements for product release.
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V. Reliability Evaluation
FIT rate (per billion): 69
MTTF = 1656 years
The presentation of FIT rate for the individual product reliability is restricted by the actual HTRB sample size of the
selected product itself and its generic family. Failure Rate Determination is based on JEDEC Standard JESD 85.
FIT means one failure per billion device hours.
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2x (77x168+77x500) x258] = 69
MTTF = 109 / FIT = 1.45 x107hrs= 1656 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB tests
H = Duration of HTRB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
Af
258
87
32
13
5.64
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
4
130 deg C
150 deg C
2.59
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