BCP69 PNP General Purpose Amplifier 4 • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. • Sourced from Process 77. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units -20 V Collector-Base Voltage -30 V Emitter-Base Voltage -5.0 V VCEO Collector-Emitter Voltage VCBO VEBO IC Collector Current TJ Junction Temperature TSTG Storage Temperature Range - Continuous -1.5 A 150 °C - 55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T =25°C unless otherwise noted a Symbol Parameter Value Units PD Total Device Dissipation Derate above 25°C 1.0 8.0 W mW/°C RθJA Thermal Resistance, Junction to Ambient 125 °C/W * Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2 Electrical Characteristics* Symbol Ta = 25°C unless otherwise noted Parameter Test Conditions BVCEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 BVCBO Collector-Base Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector-Base Cutoff Current VCB = -25V, IE = 0 VCB = -25V, IE = 0, Tj = 150oC IEBO Emitter-Base Cutoff Current VEB = -5.0V, IC = 0 hFE DC Current Gain IC = -5mA, VCE = -1.0V IC = -500mA, VCE = -1.0V IC = -1.0A, VCE = -1.0V Min. Typ. Max. Units -20 V IC = -1.0mA, IE = 0 -30 V IE = -100µA, IC = 0 -5.0 V 50 85 60 -100 -10 nA uA -100 nA 375 VCE(sat) Collector-Emitter Saturation Voltage IC = -1.0A, IB = -100mA -0.5 V VBE(on) Base-Emitter On Voltage IC = -1.0A, VCE = -1.0V -1.0 V Ccb Collector-Base Capacitance VCB = -10V, IE = 0, f = 1.0MHz 30 pF hfe Small-Signal Current Gain IC = -50mA, VCE = -10V, f = 20MHz 2.5 * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2007 Fairchild Semiconductor Corporation BCP69 Rev. B 1 www.fairchildsemi.com BCP69 PNP General Purpose Amplifier January 2007 V CESAT- COLLE CTOR-EMITTER VOLTAGE (V) 300 V CE = 5.0V 250 125 °C 150 - 40 °C 0 0.01 0.1 1 - COLLECTOR CURRENT (A) 2 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 1 IC 10 100 - COLLECTOR CURRENT ( mA) 1000 100 V CB = 2 0V 10 1 0.1 50 75 100 125 T A - AM BIENT TE MPE RATURE (°C) 150 2 0 0.01 125 °C - 40 °C 0.1 1 I C - COLLE CTOR CURRENT (A) 3 Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 COBO- COLLECTOR-BASE CAPACITANCE (pF) Collector-Cutoff Current vs Ambient Temperature 25 25 °C 0.2 50 V BESAT - BASE-EMITTER VOLTAG E (V) β = 10 0.4 100 I CBO - COLLECTOR CURRENT (nA) 1 0.6 25 °C IC BCP69 Rev. B Collector-Emitter Saturation Voltage vs Collector Current 0.8 200 V BE(O N)- BASE-E MITTER ON VOLTAGE (V) h FE- TYP ICAL PULSED CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current VCE = 5.0 V 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Collector-Base Capacitance vs Collector-Base Voltage 40 f = 1.0 MHz 30 20 10 0 0 10 20 V CB- COLLECTOR-BASE VOLTAGE (V) 30 www.fairchildsemi.com BCP69 PNP General Purpose Amplifier Typical Performance Characteristics 700 1 .5 250 PCP[W], POWER DISSIPATION - POWER DISSIPATION (mW) V CE = 10V 200 150 100 50 D f T - GAIN BANDWIDTH PRODUCT (MHz) Power Dissipation vs Ambient Temperature Gain Bandwidth Product vs Collector Current 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 500 1 .0 TO-92 400 300 0 .5 200 100 0 .0 0 00 2 255 o 5 500 7755 1100 00 1125 25 1150 50 o T a [ C ], A M B IE A NTURE T T E(M TEMPER C)P E R A T U R E 3 BCP69 Rev. B 600 www.fairchildsemi.com BCP69 PNP General Purpose Amplifier Typical Performance Characteristics BCP69 PNP General Purpose Amplifier Mechanical Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 7.00 ±0.30 (0.60) 0.70 ±0.10 (0.95) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ Dimensions in Millimeters 4 BCP69 Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 5 BCP69 Rev. B www.fairchildsemi.com BCP69 PNP General Purpose Amplifier FAIRCHILD SEMICONDUCTOR TRADEMARKS