WFD4N65S Product Description 650V Super-Junction Power MOSFET Features D � Ultra low R dson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant G S General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Absolute Maximum Ratings Symbol VDSS ID Parameter VGS Gate to Source Voltage EAR V 4 (Tc=100℃) Drain Current Pulsed 1) I AR Units 650 Continuous Drain Current (Tc=25℃) I DM EAS Value Drain Source Voltage Single Pulse Avalanche Energy 12 A ±30 V 2) 130 mJ 1) 4 A 0.4 mJ 50 W 0.4 W/℃ Single Pulse Avalanche Current Repetitive Avalanche Energy A 2.5 1) Total Power Dissipation(@Tc=25℃) PD -Derate above 25℃ TJ Junction Temperature 150 ℃ T stg Storage Temperature -55~150 ℃ Continuous diode forward current 4 A Diode pulse current 12 A Is Is,pulse Notes: 1.Repetitive Rating:Pulse width limited by maximum Junction Temperature 2.I AS=2A,VDD=60V,RG=25Ω,Starting TJ =25℃ Thermal Characteristics Symbol Value Parameter Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 2.5 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62 ℃/W WT-F051-Rev.A1 Nov.2013 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved. WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 0309 WFD4N65S Product Description 650V Super-Junction Power MOSFET Electrical Characteristics(Tc=25℃ unless otherwise noted) Characteristics Symbol Gate leakage current I GSS Test Condition Min Type Max Unit - - ±100 nA Tj=25℃ - - 1 µA Tj=125℃ - 10 - VGS =±30V,VDS =0V VDS =650,VGS =0V， Drain cut -off current I DSS Drain -source breakdown voltage V(BR)DSS I D=250µA,VGS =0V 650 - - V VGS(th) VDS =VGS,I D=250uA 2.5 3.5 4.5 V Tj=25℃ - 0.83 0.93 Ω Tj=150℃ - 1.9 - Gate threshold voltage VGS =10V,ID=2A Drain -source ON resistance R DS(ON) Gate resistance RG f=1MHz,open drain - 0.4 Input capacitance C iss VDS =25V, - 450 Reverse transfer capacitance C rss VGS =0V, - 5 Output capacitance C oss f=1MHz - 300 - 13 - Turn-on delay time td(on) pF tr VDD = 300V, I D = 2A - 12 - td(off) R G = 12Ω, VGS =10V - 31 - tf - 9 - Gate to source charge Qgs - 3 - Gate to drain charge Q gd VDD=480V,ID=2A, - 6 - Gate charge total Qg VG S=0 to 10 V - 13 - - 5. 8 - Min Type Rise time Turn-off delay time Fall time ns Vplateau Gate plateau voltage Ω nC V Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Max Unit Diode forward voltage VSD V GS=0 V, I F=2A - - 1.2 V Reverse recovery time trr V R=50 V, I F=4A, - 220 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 1.6 - µc Peak reverse recovery current I rr m - 12 - A WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : 0755-82506288 WIN SEM I M ICROELECTRON ICS Fax : 0755-82506299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 2/7 WFD4N65S Product Description 650V Super-Junction Power MOSFET 8 10 V G S =10V C om m。 on Sourc e Tc =25 C Puls e Tes t 7 C om m on Sourc e 。 Tc =25 C VD S =20V Puls e Tes t 9 VG S =7V 8 5 VG S =6.5V 4 3 VG S =6V 2 VG S =5.5V 1 7 Drain current ID(A) Drain current I D(A) 6 6 5 4 3 2 1 0 0 0 4 6 12 Drain-source voltage V 16 2 (V) GS Fig.2 Transfer characteristics 1 .5 1 .3 1 .4 1 .2 1 .3 Vth ,(No rma lized) Gate threshold voltage 1 .1 1 .2 R DS (on)[ Ω] 8 6 Gate-source voltage V Fig.1 On-Region characteristics 1 .1 1 0 .9 0 .8 0 .7 0 .6 1 0 .9 0 .8 0 .7 ID S =0.25mA Pulse test 0 .6 0 .5 0 5 10 15 Drain Current I D 20 -6 0 -4 0 -2 0 (A) 0 20 40 60 80 Junction temperatureT Fig.3 On-Resistance Variation vs Drain Current 100 120 J( C)。 140 160 Fig.4 Threshold Voltage vs. Temperature 2 .5 RD S(ON ) ,( Normalized) Dr ain-So urce O n-Resist ance 1 .2 BV DSS, (Normalized) Drain-Source Breakdo wn Voltage 4 DS (V) 1 .1 1 0 .9 V G S =0V ID S =0.25mA Puls e tes t 0 .8 2 1 .5 1 0 .5 V =10V I =2A Pu lse te st 0 0 .7 -60 -40 -20 0 20 40 60 80 100 120 140 160 -6 0 -4 0 。 Junction temperatureT J ( C) Fig.5 Breakdown Voltage vs.Temperature WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : 0755-82506288 WIN SEM I -2 0 0 20 40 60 80 100 Junction temperatureT J ( 。 C) 120 140 160 Fig.6 On-Resistance vs.Temperature M ICROELECTRON ICS Fax : 0755-82506299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 3/7 WFD4N65S Product Description 650V Super-Junction Power MOSFET 10000.00 10 VD S =120V 8 Cis s Gate-Source Voltag e V GS (V) capaci ta nce (pF) 1000.00 Co s s 100.00 Ci s s = C g s + C g d ( C d s shorted) C c iss = C g d Co s s = C d s + C g d 1 0 .0 0 1 .0 0 Cr ss Notes: f=1M Hz VG S =0V V D S =480V 6 4 2 ID=2A 0 0 .1 0 0 .1 1 10 0 100 Drain-Source Voltge V 4 6 8 Total Gate Charge Q 10 G 12 14 (nC) Fig.8 Gate Charge Characteristics Fig.7Capacitance Characreristics 40 10 Limlied by R D S( on) Drai n p owe r dissipa tio n P D (W ) 100 Drai n Cu rrent I D(A) 2 D S(V) 100us 1ms 1 Notes : Tc =25。 C Tc =25。 C Single Puls e 0 .1 35 30 25 20 15 10 5 0 0 .0 1 1 10 100 Drain-Source Voltage V 0 1000 40 80 120 160 。 Case temper atur e T c ( C) (V) DS Fig.9 Maximum Safe Operation Area Fig.10 Power Dissipation vs.Temperature 1. 0E+01 ZθJC Normal ized Transient Thermal Resistance In des c ending or der D= 0.7,0.5,0.3,0.1,0.05,0.02,0.01,s ingle puls e 1. 0E+00 1. 0E-01 PD M t 1. 0E-02 D u ty= t/T C /W Ma x. ZθJC (t)=4.3 。 T 1. 0E-03 1. 0E-06 1. 0E-05 1. 0E-04 1. 0E-03 1. 0E-02 1. 0E-01 1. 0E+00 1. 0E+01 1. 0E+02 1. 0E+03 Pulse Width t (s) Fig.11 Transient Thermal Response Curve WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : 0755-82506288 WIN SEM I M ICROELECTRON ICS Fax : 0755-82506299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 4/7 WFD4N65S Product Description 650V Super-Junction Power MOSFET VG S RL Qg 10V VD S VG S Qg s Qg d DUT 10m A C har ge Fig.12 Gate Charge Test Circuit & Waveform RL VD S VD S VD D VG S RG 90% VG S DUT 10V 10% td(on) tr to n td( off) tf to ff Fig.13 Switching Test Circuit & Waveforms L EA R =1/2LI V ds 2 BV AR DSS V ds Id V gs V gs +V d d VDC - Rg IA R Id DUT V gs V gs Fig.14 Unclamped Inductive Switching Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : 0755-82506288 WIN SEM I M ICROELECTRON ICS Fax : 0755-82506299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 5/7 WFD4N65S Product Description 650V Super-Junction Power MOSFET DPAK Package Dimension U n it:m m E A F M IN M AX A 2 . 19 2. 38 A1 - 0. 13 b 0 .6 4 c 0 . 46 0. 61 D 5 . 97 6. 22 D1 0 . 89 1. 27 E 6 . 35 6. 73 E1 5 . 21 5. 46 D D1 E1 符 号 symbol H A1 L2 b c e 2 . 28TYP e θ L F 0 . 46 0. 61 H 9 . 65 10 . 41 L 1 . 40 1. 78 L2 0 . 64 。 0 1. 01 θ WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : 0755-82506288 WIN SEM I M ICROELECTRON ICS Fax : 0755-82506299 WIN SEM I 0. 89 M ICROELECTRON ICS 8。 WIN SEM I M ICROELECTRON ICS 6/7 WFD4N65S Product Description 650V Super-Junction Power MOSFET NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002 Post Code : 518040 Tel : 86-0755-82506257 FAX : 86-0755-82506299 Web Site : www.winsemi.com WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : 0755-82506288 WIN SEM I M ICROELECTRON ICS Fax : 0755-82506299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 7/7