TI PTV12010WAH

PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
8-A, 12-V INPUT NONISOLATED WIDE-OUTPUT ADJUST SIP MODULE
FEATURES
APPLICATIONS
•
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•
•
•
•
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•
•
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8 A Output Current
12-V Input Voltage
Wide-Output Voltage Adjust (1.2 V to
5.5 V)/(0.8 V to 1.8 V)
Efficiencies up to 93%
On/Off Inhibit
Prebias Start Up
Undervoltage Lockout
Auto-Track™ Sequencing
Output Overcurrent Protection (Nonlatching,
Auto-Reset)
Operating Temperature: –40°C to 85°C
Safety Agency Approvals: UL/cUL 60950,
EN60950 VDE (Pending)
POLA™ Alliance Compatible
Multivoltage Digital Systems
High-End Computing
Networking
12-V Intermediate Bus Architectures
DESCRIPTION
The PTV12010 series of non-isolated power modules are part of a new class of complete dc/dc switching
regulator modules from Texas Instruments. These modules combine high performance with double-sided,
surface mount construction to give designers the flexibility to power the most complex multiprocessor digital
systems using off-the-shelf catalog parts.
The PTV12010 series is produced in an 8-pin, single in-line pin (SIP) package. The SIP footprint minimizes board
space, and offers an alternate package option for space conscious applications. Operating from a 12-V input bus,
the series provides step-down conversion to a wide range of output voltages, at up to 8 A of output current. The
output voltage of the W-suffix parts can be set to any value over the range of 1.2 V to 5.5 V. The L-suffix parts
have an adjustment range of 0.8 V to 1.8 V. The output voltage is set using a single external resistor.
This series includes Auto-Track™. Auto-Track™ simplifies the task of supply-voltage sequencing in a power
system by enabling the output voltage of multiple modules to accurately track each other, or any external voltage,
during power up and power down.
Other operating features include an on/off inhibit, and the ability to start up into an existing output voltage or
prebias. A nonlatching overcurrent trip and overtemperature shutdown provide protection against load faults.
Target applications include complex multivoltage, multiprocessor systems that incorporate the industry's
high-speed DSPs, microprocessors, and bus drivers.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
POLA, Auto-Track are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004, Texas Instruments Incorporated
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
STANDARD APPLICATION
Track
5
Track
VI
8
VI
PTV12010
Inhibit
C1*
100-F
(Required)
+
C2*
10-F
Ceramic
(Required)
6
VO
2, 3
VOAdj
GND
7
VO
1
Inhibit
4
+
RSET#
1%
0 .05 W
(Required)
C3*
100-F
(Optional)
GND
L
O
A
D
GND
*See the application information for capacitor recommendation.
#RSET is Required to adjust the output voltage higher than its lowest value. See the application information for values.
ORDERING INFORMATION
PTV12010 (Basic Model)
(1)
Output Voltage
Part Number
DESCRIPTION
Package (1)
1.2 V – 5.5 V (Adjustable)
PTV12010WAH
Horizontal T/H
EVA
0.8 V – 1.8 V (Adjustable)
PTV12010LAH
Horizontal T/H
EVA
See the applicable package drawing for dimensions and PC board layout.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted (1)
UNIT
V(Track)
Track input
TA
Operating temperature range
Over VI range
Lead temperature
5 seconds
Tstg
Storage temperature
V(Inhabit)
Inhibit (pin 12) input voltage
(1)
(2)
–0.3 V to VI +0.3 V
–40°C to 85°C
260°C
(2)
–40°C to 125°C
–0.3 V to 7 V
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
This product is not compatible with surface-mount reflow solder processes.
PACKAGE SPECIFICATIONS
PTV12010x (Suffix AH)
Weight
2.6 grams
Flammability
Meets UL 94 V-O
Mechanical shock
Per Mil-STD-883D, Method 2002.3, 1 ms, 1/2 sine, mounted
500 Gs
Mechanical vibration
Mil-STD-883D, Method 2007.2, 20 Hz - 2000 Hz
15 Gs
(1)
2
Qualification limit.
(1)
(1)
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
ELECTRICAL CHARACTERISTICS
operating at 25°C free-air temperature, VI = 12 V, VO = 3.3 V, C1 = 100 µF, C2 = 10 µF, C3 = 0 µF, and I O = IO max (unless
otherwise noted)
PARAMETER
PTV12010W
TEST CONDITIONS
IO
Output current
Natural convection airflow
VI
Input voltage range
Over IO load range
MIN
TYP
0
η
IO (trip)
(1)
A
V
±2%
–40°C < TA < 85°C
Line regulation
Over VI range
±10
Load regulation
Over IO range
±12
Total output variation
Includes set-point, line, load, –40°C ≤ TA≤ 85°C
Adjust range
Over VI range
IO = IO max
(2)
±0.5%
Temperature variation
Efficiency
UNIT
13.2
8
10.8
Set-point voltage tolerance
VO
MAX
mV
mV
±3
1.2
(2)
5.5
RSET = 280 Ω, VO = 5 V
92%
RSET = 2.0 kΩ, VO = 3.3 V
90%
RSET = 4.32 kΩ, VO = 2.5 V
88%
RSET = 11.5 kΩ, VO = 1.8 V
85%
RSET = 24.3 kΩ, VO = 1.5 V
83%
RSET = open cct., VO = 1.2 V
80%
%Vo
V
Output voltage ripple
(peak-to-peak)
20-MHz bandwidth
20
mVPP
Overcurrent threshold
Reset, followed by auto-recovery
16
A
1-A/µs load step, 50 to 100% IO max, C3 = 100 µF
Transient response
Track control (pin 5)
UVLO
Undervoltage lockout
IIL Input low current
Pin to GND
Control slew-rate limit
C3 ≤ C3 (max)
70
µs
100
mV
1
9.5
VI decreasing
VIL Input low voltage
IIL Input low current
8.8
Inhibit (pin 7) to GND, Track (pin 5) open
ƒS
Switching frequency
Over VI and IO ranges
Ceramic (C2)
Capacitance value
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Reliability
100
(4)
10
(4)
Nonceramic
0
Ceramic
0
Equivalent series resistance (nonceramic)
MTBF
0.6
Per Telcordia SR-332, 50% stress, TA = 40°C, ground
benign
4
325
V
V
mA
10
250
mA
V/ms
(3)
–0.24
Nonceramic (C1)
External input capacitance
Open
–0.2
Pin to GND
Input standby current
10.4
9
2
Referenced to GND
II (stby)
External output capacitance (C3)
–0.13
VI increasing
VIH Input high voltage
Inhibit control (pin 7)
Recovery time
Vo over/undershoot
mA
400
kHz
µF
100
(5)
3,300
(6)
300
µF
(7)
mΩ
5
106 Hrs
See thermal derating curves for safe operating area (SOA), or consult factory for appropriate derating.
The set-point voltage tolerance is affected by the tolerance and stability of RSET. The stated limit is unconditionally met if RSET has a
tolerance of 1%, with 100 ppm/°C or better temperature stability.
This control pin is pulled up to an internal supply voltage. To avoid risk of damage to the module, do not apply an external voltage
greater than 7 V. If this input is left open-circuit, the module operates when input power is applied. A small low-leakage (<100 nA)
MOSFET is recommended for control. For further information, consult the related application note.
A 10-µF high-frequency ceramic capacitor and 100-µF electrolytic input capacitor are required for proper operation. The electrolytic
capacitor must be rated for the minimum ripple current rating. See the application information for further guidance on input capacitor
selection.
An external output capacitor is not required for basic operation. Adding 100 µF of distributed capacitance at the load improves the
transient response.
This is the calculated maximum. The minimum ESR limitation often results in a lower value. See the application information for further
guidance.
This is the typical ESR for all the electrolytic (nonceramic) output capacitance. Use 7 mΩ as the minimum when using max-ESR values
to calculate.
3
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
ELECTRICAL CHARACTERISTICS
operating at 25°C free-air temperature, VI = 12 V, VO = 1.8 V, C1 = 100 µF, C2 = 10 µF, C3 = 0 µF, and I O = IO max (unless
otherwise noted)
PARAMETER
PTV12010L
TEST CONDITIONS
IO
Output current
Natural convection airflow
VI
Input voltage range
Over IO load range
MIN
TYP
0
η
IO (trip)
(1)
A
V
±2%
–40°C <TA < 85°C
Line regulation
Over VI range
±10
Load regulation
Over IO range
±12
Total output variation
Includes set-point, line, load, –40°C ≤ TA≤ 85°C
Adjust range
Over VI range
IO = IO max
(2)
±0.5%
Temperature variation
Efficiency
UNIT
13.2
8
10.8
Set-point voltage tolerance
VO
MAX
mV
mV
±3
0.8
(2)
1.8
RSET = 130 Ω, VO = 1.8 V
87%
RSET = 3.57 kΩ, VO = 1.5 V
86%
RSET = 12.1 kΩ, VO = 1.2 V
84%
RSET = 32.4 kΩ, VO = 1 V
81%
RSET = open cct., VO = 0.8 V
78%
%Vo
V
Output voltage ripple (pk-pk)
20-MHz bandwidth
15
mVPP
Overcurrent threshold
Reset, followed by auto-recovery
16
A
1-A/µs load step, 50 to 100% IO max, C3 = 100 µF
Transient response
Track control (pin 5)
IIL Input low current
Pin to GND
Control slew-rate limit
C3 ≤ C3 (max)
VIH Input high voltage
Inhibit control (pin 7)
VIL Input low voltage
IIL Input low current
II (stby)
Input standby current
UVLO
Undervoltage lockout
ƒS
Switching frequency
Recovery time
70
µs
Vo over/undershoot
100
mV
1
2
Referenced to GND
Pin to GND
10
VI increasing
9.5
VI decreasing
Over VI and IO ranges
Capacitance value
(1)
(2)
(3)
(4)
(5)
(6)
(7)
4
Reliability
8.8
9
200
250
Nonceramic (C1)
100
(4)
Ceramic (C2)
10
(4)
Nonceramic
0
Ceramic
0
Per Telcordia SR-332, 50% stress, TA = 40°C, ground
benign
4
mA
V/ms
(3)
0.6
–0.24
Equivalent series resistance (nonceramic)
MTBF
Open
–0.2
Inhibit (pin 7) to GND, Track (pin 5) open
External input capacitance
External output capacitance (C3)
–0.13
V
mA
mA
10.4
300
V
kHz
µF
100
(5)
3,300
(6)
300
µF
(7)
mΩ
5
106 Hrs
See thermal derating curves for safe operating area (SOA), or consult factory for appropriate derating.
The set-point voltage tolerance is affected by the tolerance and stability of RSET. The stated limit is unconditionally met if RSET has a
tolerance of 1%, with 100 ppm/°C or better temperature stability.
This control pin is pulled up to an internal supply voltage. To avoid risk of damage to the module, do not apply an external voltage
greater than 7 V. If this input is left open-circuit, the module operates when input power is applied. A small low-leakage (<100 nA)
MOSFET is recommended for control. For further information, consult the related application note.
A 10-µF high-frequency ceramic capacitor and 100-µF electrolytic input capacitor are required for proper operation. The electrolytic
capacitor must be rated for the minimum ripple current rating. Consult the Application Information for guidance on input capacitor
selection.
An external output capacitor is not required for basic operation. Adding 100 µF of distributed capacitance at the load improves the
transient response.
This is the calculated maximum. The minimum ESR limitation often results in a lower value. Consult the Application Informaiton for
further guidance.
This is the typical ESR for all the electrolytic (nonceramic) output capacitance. Use 7 mΩ as the minimum when using max-ESR values
to calculate.
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
PTV12010W Characteristic Data; 1.2 V to 5.5 V (8) (9)
EFFICIENCY
vs
OUTPUT CURRENT
OUTPUT VOLTAGE RIPPLE
vs
OUTPUT CURRENT
100
80
VO = 1.8 V
70
VO = 1.2 V
60
50
0
1
2
3
4
5
6
7
40
VO = 5 V
VO = 3.3 V
30
20
10
VO = 1.8 V
0
8
PD − Power Dissipation − W
V O − Output Voltage Ripple − mV PP
VO = 3.3 V
90
4
VO = 5 V
3
VO = 3.3 V
2
VO = 1.8 V
1
VO = 1.2 V
VO = 1.2 V
0
0
2
4
6
0
8
2
4
6
8
IO − Output Current − A
IO − Output Current − A
IO − Output Current − A
Figure 1.
Figure 2.
Figure 3.
TEMPERATURE DERATING
vs
OUTPUT CURRENT & AIRFLOW
TEMPERATURE DERATING
vs
OUTPUT CURRENT & AIRFLOW
TEMPERATURE DERATING
vs
OUTPUT CURRENT & AIRFLOW
90
90
90
80
80
Airflow
Temperature Derating − C
400 LFM
70
200 LFM
60
100 LFM
50
Nat conv
40
VO = 1.8 V
30
80
Airflow
70
400 LFM
60
200 LFM
50
Temperature Derating − C
Efficiency − %
5
50
VO = 5 V
Temperature Derating − C
POWER DISSIPATION
vs
OUTPUT CURRENT
100 LFM
40
Nat conv
VO = 3.3 V
30
400 LFM
70
200 LFM
Airflow
60
100 LFM
50
Nat conv
40
30
VO = 5 V
20
20
0
2
4
6
IO − Output Current − A
Figure 4.
(8)
(9)
8
20
0
2
4
6
IO − Output Current − A
Figure 5.
8
0
2
4
6
IO − Output Current − A
8
Figure 6.
The electrical characteristic data has been developed from actual products tested at 25°C. This data is considered typical for the
converter. Applies to Figure 1, Figure 2, and Figure 3.
The temperature derating curves represent the conditions at which internal components are at or below the manufacturer's maximum
operating temperatures. Derating limits apply to modules soldered directly to a 100 mm x 100 mm double-sided PCB with 2 oz. copper.
Applies to Figure 4, Figure 5, and Figure 6.
5
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
PTV12010L Characteristic Data; 0.8 V to 1.8 V (10) (11)
EFFICIENCY
vs
OUTPUT CURRENT
OUTPUT VOLTAGE RIPPLE
vs
OUTPUT CURRENT
50
V O − Output Voltage Ripple − mV PP
100
VO = 1.2 V
Efficiency − %
90
VO = 1 V
80
70
VO = 0.8 V
60
50
40
VO = 1 V
20
1
2
3
4
5
6
7
VO = 0.8 V
10
0
0
VO = 1.2 V
30
8
0
1
3
4
5
6
7
8
Figure 7.
Figure 8.
POWER DISSIPATION
vs
OUTPUT CURRENT
TEMPERATURE DERATING
vs
OUTPUT CURRENT & AIRFLOW
2.5
90
80
2
Temperature Derating − C
PD − Power Dissipation − W
2
IO − Output Current − A
IO − Output Current − A
1.5
1
0.5
200 LFM
60
100 LFM
50
Nat conv
40
VO = 1.8 V
30
0
0
2
4
6
IO − Output Current − A
Figure 9.
8
400 LFM
Airflow
70
20
0
6
2
4
IO − Output Current − A
8
Figure 10.
(10) The electrical characteristic data has been developed from actual products tested at 25°C. This data is considered typical for the
converter. Applies to Figure 7, Figure 8, and Figure 9.
(11) The temperature derating curves represent the conditions at which internal components are at or below the manufacturer's maximum
operating temperatures. Derating limits apply to modules soldered directly to a 100 mm x 100 mm double-sided PCB with 2 oz. copper.
Applies to Figure 10.
6
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
DEVICE INFORMATION
TERMINAL FUNCTIONS
TERMINAL
NAME
NO.
DESCRIPTION
VI
8
VO
2, 3
The regulated positive power output with respect to the GND node.
GND
1, 6
This is the common ground connection for the VI and VO power connections. It is also the 0 VDC reference for the
control inputs.
Inhibit
7
The Inhibit pin is an open-collector/drain, active-low input that is referenced to GND. Applying a low-level ground
signal to this input disables the module’s output and turns off the output voltage. When the Inhibit control is active,
the input current drawn by the regulator is significantly reduced. If the inhibit feature is not used, the control pin
should be left open-circuit. The module then produces an output voltage whenever a valid input source is applied.
Vo Adjust
4
The positive input voltage power node to the module, which is referenced to common GND.
A 1% resistor must be connected directly between this pin and GND (pin 1) to set the output voltage of the module
higher than its lowest value. The temperature stability of the resistor should be 100 ppm/°C (or better). The
set-point range is 1.2 V to 5.5 V for W-suffix devices and 0.8 V to 1.8 V for L-suffix devices. The resistor value
required for a given output voltage may be calculated using a formula. If left open-circuit, the module output
voltage defaults to its lowest value. For further information on output voltage adjustment, consult the related
application note.
The specification table gives the standard resistor values for a number of common output voltages.
Track
5
This is an analog control input that enables the output voltage to follow an external voltage. This pin becomes
active typically 20 ms after the input voltage has been applied, and allows direct control of the output voltage from
0 V up to the nominal set-point voltage. Within this range, the output follows the voltage at the Track pin on a
volt-for-volt basis. When the control voltage is raised above this range, the module regulates at its set-point
voltage. The feature allows the output voltage to rise simultaneously with other modules powered from the same
input bus. If unused, this input should be connected to VI.
NOTE: Due to the undervoltage lockout feature, the output of the module cannot follow its own input voltage
during power up. Consult the related Application Information for further guidance.
7
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
APPLICATION INFORMATION
Capacitor Recommendations for the PTV12010 Series of Power Modules
Input Capacitors
The required input capacitors are a combination of a 10-µF X5R/X7R ceramic, and a 100-µF electrolytic type.
When VO > 3 V the 100-µF electrolyitc capacitance must be rated for 700 mArms ripple current capability. For
VO ≤ 3 V, the ripple current rating must be at least 450 mArms. Where applicable, Table 1 gives the maximum
output voltage and current limits for a capacitor's rms ripple current rating. The ripple current requirements for the
electrolytic capacitance are conditional that the 10-µF ceramic capacitor is present.
The 10-µF ceramic capacitor is necessary to reduce both the magnitude of ripple current through the electroytic
capacitor and the amount of ripple current reflected back to the input source. Ceramic capacitors should be
located within 0.5 in. (1,3 cm) of the module input pins. Additional ceramic capacitors can be added to reduce the
RMS ripple current requirement for the electrolytic capacitor.
Ripple current (Arms) rating, less than 100 mΩ of equivalent series resistance (ESR), and temperature are the
major considerations when selecting input capacitors. Regular tantalum capacitors have a recommended
minimum voltage rating of 2 × (max. dc voltage + ac ripple). This is standard practice to ensure reliability. Only a
few tantalum capacitors were found to have sufficient voltage rating to meet this requirement. At temperatures
below 0°C, the ESR of aluminum electrolytic capacitors increases. For these applications Os-Con, polymer-tantalum, and polymer-aluminum types should be considered.
Output Capacitor (Optional)
For applications with load transients (sudden changes in load current), regulator response benefits from external
output capacitance. The optional value defined is only required to meet the transient response specification. For
most applications, a high-quality computer-grade aluminum electrolytic capacitor is adequate. These capacitors
provide decoupling over the frequency range, 2 kHz to 150 kHz, and are suitable when ambient temperatures are
above 0°C. For operation below 0°C, tantalum, ceramic, or Os-Con type capacitors are recommended. When
using one or more nonceramic capacitors, the calculated equivalent ESR should be no lower than 4 mΩ (7 mΩ
using the manufacturer's maximum ESR for a single capacitor). A list of preferred low-ESR type capacitors are
identified in Table 1.
In addition to electrolytic capacitance, adding a 10–µF ceramic capacitor across the output will further reduce the
output ripple voltage and improve the regulator's transient response. The measurement of both the output ripple
and transient response is also best achieved across a 10–µF ceramic capacitor.
Ceramic Capacitors
Above 150 kHz, the performance of aluminum electrolytic capacitors is less effective. Multilayer ceramic
capacitors have low ESR and a resonant frequency higher than the bandwidth of the regulator. They are
recommended to reduce the reflected ripple current at the input as well as improve the transient response of the
output. When used on the output their combined ESR is not critical as long as the total value of ceramic
capacitance does not exceed approximately 300 µF. Also, to prevent the formation of local resonances, do not
place more than five identical ceramic capacitors in parallel with values of 10 µF or greater.
Tantalum Capacitors
Tantalum-type capacitors can only be used on the output bus, and are recommended for applications where the
ambient operating temperature can be less than 0°C. The AVX TPS, Sprague 593D/594/595 and Kemet
T495/T510 capacitor series are suggested over many other tantalum types due to their higher rated surge, power
dissipation, and ripple current capability. As a caution, many general-purpose tantalum capacitors have
considerably higher ESR, reduced power dissipation and lower ripple current capability. These capacitors are
also less reliable as they have reduced power dissipation and surge current ratings. Tantalum capacitors that
have no stated ESR or surge current rating are not recommended for power applications.
When specifying Os-con and polymer tantalum capacitors for the output, the minimum ESR limit is encountered
before the maximum capacitance value is reached.
8
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
APPLICATION INFORMATION (continued)
Capacitor Table
Table 1 identifies the characteristics of capacitors from a number of vendors with acceptable ESR and ripple
current (rms) ratings. The recommended number of capacitors required at both the input and output buses is
identified for each capacitor type.
Note: This is not an extensive capacitor list. Capacitors from other vendors are available with comparable
specifications. Those listed are for guidance. The RMS ripple current rating and ESR (at 100 kHz) are critical
parameters necessary to ensure both optimum regulator performance and long capacitor life.
Designing for Fast Load Transients
The transient response of the dc/dc converter has been characterized using a load transient with a di/dt of 1
A/µs. The typical voltage deviation for this load transient is given in the data sheet specification table using the
optional value of output capacitance. As the di/dt of a transient is increased, the response of a converter
regulation circuit ultimately depends on its output capacitor decoupling network. This is an inherent limitation with
any dc/dc converter once the speed of the transient exceeds its bandwidth capability. If the target application
specifies a higher di/dt or lower voltage deviation, the requirement can only be met with additional output
capacitor decoupling. In these cases special attention must be paid to the type, value and ESR of the capacitors
selected.
Table 1. Input/Output Capacitors
Capacitor Characteristics
Quantity
Working
Voltage
(V)
Value
(µF)
Max ESR
at 100 kHz
(Ω)
Max. Irms
Ripple
Current
at 85°C
(mA)
Panasonic, Aluminum
25
330
0.090
755
10 × 12.5
1
1
EEUFC1E331
FC (Radial)
35
180
0.090
755
10 × 12.5
1
1
EEUFC1V181
FK (SMD)
25
470
0.080
850
10 × 10.2
1
1
EEVFK1E471P
PXA, Poly-Aluminum (SMD)
16
150
0.026
3430
10 × 7.7
1
≤4
PXA16VC151MJ80TP
FP, Os-con (Radial)
20
120
0.024
3100
8 × 10.5
1
≤4
20FP120MG
FS, OS-con (SMD)
20
100
0.030
2740
8 × 10.5
1
≤4
20FS100M
LXZ, Aluminum (Radial)
35
220
0.090
760
10 × 12.5
1
1
LXZ35VB221M10X12LL
HD (Radial)
25
220
0.072
760
8 × 11.5
1
1
UHD1E221MPR
PM (Radial)
35
220
0.090
770
10 × 15
1
1
UPM1V221MHH6
16
100
0.039
2500
8 × 6.9
≤5
EEFWA1C101P
180
0.005
4000
7.3 × 4.3
× 4.2
≤1
EEFSE0J181R
(VO ≤ 5.1 V)
Capacitor Vendor,
Type/Series
(Style)
Physical
Size
(mm)
Input
Bus
Optional
Output
Bus
Vendor
Part Number
United Chemi-Con
Nichicon, Aluminum
Panasonic, Poly-Aluminum
WA (SMD)
S/SE (SMD)
6.3
(1)
1
N/R
(2)
Sanyo
SVP, Os-Con (SMD)
20
100
0.024
>3300
8 × 12
1
≤4
20SVP100M
SP, Os-Con
20
120
0.024
>3100
8 × 10.5
1
≤4
20SP120M
TPE, Pos-cap (SMD)
10
220
0.025
>2400
7.3 × 5.7
1
≤4
10TPE220ML
AVX, Tantalum, TPS (SMD)
10
100
0.100
>1090
10
220
0.100
>1414
25
68
0.095
>1451
T520, Poly-Tant (SMD)
10
100
0.080
1200
T495, Tantalum (SMD)
10
100
0.100
>1100
7.3 L × 5.7 W
× 4.1 H
N/R
(2)
≤5
TPSD107M010R0100
N/R
(2)
≤5
TPSV227M010R0100
≤5
TPSV686M025R0095
2
Kemet (SMD)
7.3L × 5.7W
× 4H
N/R
(2)
≤5
T520D107M010AS
N/R
(2)
≤1
T495X107M010AS
Vishay-Sprague
(1)
(2)
The voltage rating of this capacitor only allows it to be used for output voltages that are equal to, or less than, 5.1 V.
N/R – Not recommended. The voltage rating does not meet the minimum operating limits.
9
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
APPLICATION INFORMATION (continued)
Table 1. Input/Output Capacitors (continued)
Capacitor Characteristics
Quantity
Working
Voltage
(V)
Value
(µF)
Max ESR
at 100 kHz
(Ω)
Max. Irms
Ripple
Current
at 85°C
(mA)
10
150
0.090
1100
25
68
0.095
1600
7.3L × 6W ×
4.1H
94SP, Organic (Radial)
16
100
0.075
2890
10 × 10.5
Kemet, Ceramic X5R (SMD)
16
10
0.002
—
6.3
47
0.002
6.3
Capacitor Vendor,
Type/Series
(Style)
594D, Tantalum (SMD)
Murata, Ceramic X5R (SMD)
TDK, Ceramic X5R (SMD)
(3)
Physical
Size
(mm)
Vendor
Part Number
Optional
Output
Bus
Input
Bus
≤5
594D157X0010C2T
2
≤5
594D686X0025R2T
1
≤2
94SP107X0016FBP
≤5
C1210C106M4PAC
(2)
N/R
≥1
(3)
N/R
(2)
≤5
C1210C476K9PAC
100
N/R
(2)
≤3
GRM32ER60J107M
6.3
47
N/R
(2)
≤5
GRM32ER60J476M
16
22
16
0.002
3225 mm
—
3225 mm
≥1
(3)
≤5
GRM32ER61C226K
10
≥1
(3)
≤5
GRM32DR61C106K
6.3
100
N/R
(2)
≤3
C3225X5R0J107MT
6.3
47
N/R
(2)
≤5
C3225X5R0J476MT
16
22
16
10
0.002
—
3225 mm
≥1
(3)
≤5
C3225X5R1C226MT
≥1
(3)
≤5
C3225X5R1C106MT
Ceramic capacitors are required to complement electrolytic types at the input and to reduce high-frequency ripple current.
Adjusting the Output Voltage of the PTV12010x Series
The VO Adjust control (pin 8) sets the output voltage of the PTV12010 product. The adjustment range is from
1.2 V to 5.5 V for the W-suffix modules and 0.8 V to 1.8 V for L-suffix modules. The adjustment method requires
the addition of a single external resistor, RSET, that must be connected directly between the VO Adjust and GND
(pin 1 or 2). Table 2 gives the preferred value of the external resistor for a number of standard voltages, along
with the actual output voltage that this resistance value provides. Figure 11 shows the placement of the required
resistor.
Table 2. Standard Values of RSET for Common Output Voltages
PTV12010W
PTV12010L
VO
(Required)
RSET
(Standard Value)
VO
(Actual)
RSET
(Standard Value)
VO
(Actual)
5V
280 Ω
5.009 V
N/A
N/A
3.3 V
2.0 kΩ
3.294 V
N/A
N/A
2.5 V
4.32 kΩ
2.503 V
N/A
N/A
2V
8.06 kΩ
2.010 V
N/A
N/A
1.8 V
11.5 kΩ
1.801 V
130 Ω
1.800 V
1.5 V
24.3 kΩ
1.506 V
3.57 kΩ
1.499 V
1.2 V
Open
1.200 V
12.1 kΩ
1.201 V
1.1 V
N/A
N/A
18.7 kΩ
1.101 V
1.0 V
N/A
N/A
32.4 kΩ
0.999 V
0.9 V
N/A
N/A
71.5 kΩ
0.901 V
0.8 V
N/A
N/A
Open
0.800 V
For other output voltages, the value of the required resistor can either be calculated or simply selected from the
range of values given in Table 4. Equation 1 may be used for calculating the adjust resistor value. Select the
appropriate value for the parameters, Rs and Vmin, from Table 3.
R set 10 k 10
0.8 V
V out V
min
R s k
(1)
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
Table 3. Adjust Formula Parameters
Pt. No.
PTV12010W
PTV12010L
Vmin
1.2 V
0.8 V
Vmax
5.5 V
1.8 V
Rs
1.82 kΩ
7.87 kΩ
GN D
GND
VO
VO
PTV12010
VO Adj
+
RSET
1%, 0.05W
CO
100 F
(Optional)
GND
(1)
A 0.05-W rated resistor may be used. The tolerance should be 1%, with temperature stability of 100 ppm/°C (or
better). Place the resistor as close to the regulator as possible. Connect the resistor directly between pin 8 and pins 1
or 2, using dedicated PCB traces.
(2)
Never connect capacitors from VoAdj to either GND or Vo. Any capacitance added to the VoAdj pin affects the stability
of the regulator.
Figure 11. VO Adjust Resistor Placement
11
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
Table 4. Calculated Values of RSET for Other Output Voltages
PTV12010W
12
PTV12010L
VOUT
RSET
VOUT
RSET
VOUT
RSET
1.200
Open
2.70
3.51 kΩ
0.800
Open
1.250
158.0 kΩ
2.80
3.18 kΩ
0.825
312.0 kΩ
1.300
78.2 kΩ
2.90
2.89 kΩ
0.850
152.0 kΩ
1.350
51.5 kΩ
3.00
2.62 kΩ
0.875
98.8 kΩ
1.400
38.2 kΩ
3.10
2.39 kΩ
0.900
72.1 kΩ
1.450
30.2 kΩ
3.20
2.18 kΩ
0.925
56.1 kΩ
1.50
24.8 kΩ
3.30
1.99 kΩ
0.950
45.5 kΩ
1.55
21.0 kΩ
3.40
1.82 kΩ
0.975
37.8 kΩ
1.60
18.2 kΩ
3.50
1.66 kΩ
1.000
32.1 kΩ
1.65
16.0 kΩ
3.60
1.51 kΩ
1.025
27.7 kΩ
1.70
14.2 kΩ
3.70
1.38 kΩ
1.050
24.1 kΩ
1.75
12.7 kΩ
3.80
1.26 kΩ
1.075
21.2 kΩ
1.80
11.5 kΩ
3.90
1.14 kΩ
1.100
18.8 kΩ
1.85
10.5 kΩ
4.00
1.04 kΩ
1.125
16.7 kΩ
1.90
9.61 kΩ
4.10
939 Ω
1.150
15.0 kΩ
1.95
8.85 kΩ
4.20
847 Ω
1.175
13.5 kΩ
2.00
8.18 kΩ
4.30
761 Ω
1.200
12.1 kΩ
2.05
7.59 kΩ
4.40
680 Ω
1.250
9.91 kΩ
2.10
7.07 kΩ
4.50
604 Ω
1.300
8.13 kΩ
2.15
6.60 kΩ
4.60
533 Ω
1.350
6.68 kΩ
2.20
6.18 kΩ
4.70
466 Ω
1.400
5.46 kΩ
2.25
5.80 kΩ
4.80
402 Ω
1.450
4.44 kΩ
2.30
5.45 kΩ
4.90
342 Ω
1.50
3.56 kΩ
2.35
5.14 kΩ
5.00
285 Ω
1.55
2.8 kΩ
2.40
4.85 kΩ
5.10
231 Ω
1.60
2.13 kΩ
2.45
4.58 kΩ
5.20
180 Ω
1.65
1.54 kΩ
2.50
4.33 kΩ
5.30
131 Ω
1.70
1.02 kΩ
2.55
4.11 kΩ
5.40
85 Ω
1.75
551 Ω
2.60
3.89 kΩ
5.50
41 Ω
1.80
130 Ω
2.65
3.70 kΩ
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
Features of the PTH/PTV Family of Non-Isolated, Wide-Output Adjust Power Modules
POLA™ Compatibility
The PTH/PTV family of non-isolated, wide-output adjustable power modules from Texas Instruments are
optimized for applications that require a flexible, high-performance module that is small in size. Each of these
products are POLA™ compatible. POLA-compatible products are produced by a number of manufacturers, and
offer customers advanced, non-isolated modules with the same footprint and form factor. POLA parts are also
ensured to be interoperable, thereby providing customers with true second-source availability.
Soft-Start Power Up
The Auto-Track feature allows the power up of multiple PTH/PTV modules to be directly controlled from the
Track pin. However, in a stand-alone configuration, or when the Auto-Track feature is not being used, the Track
pin should be directly connected to the input voltage, Vi (see Figure 12).
Track
12 V
PTV12010W
GND
Adjust
RSET, 2 K
1%
0.05 W
+
C1
C2
3.3 V
VO
GND
+
VI
C3
GND
Figure 12.
When the Track pin is connected to the input voltage, the Auto-Track function is permanently disengaged. This
allows the module to power up entirely under the control of its internal soft-start circuitry. When power up is
under soft-start control, the output voltage rises to the set point at a quicker and more linear rate.
Vin (5 V/Div)
Vo (1 V/Div)
Iin (5 A/Div)
HORIZ SCALE 5 ms/Div
Figure 13.
From the moment a valid input voltage is applied, the soft-start control introduces a short time delay (typically 8
ms-15 ms) before allowing the output voltage to rise. The output then progressively rises to the module set-point
voltage. Figure 13 shows the soft-start power-up characteristic of a PTH/PTV module, operating from a 12-V
input bus and configured for a 3.3-V output. The waveforms were measured with a 5-A resistive load and the
Auto-Track feature disabled. The initial rise in input current when the input voltage first starts to rise is the charge
current drawn by the input capacitors. Power up is complete within 25 ms.
13
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PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
Overcurrent Protection
For protection against load faults, the modules incorporate output overcurrent protection. Applying a load that
exceeds the overcurrent threshold causes the regulated output to shut down. Following shutdown, a module
periodically attempts to recover by initiating a soft-start power up. This is described as a hiccup mode of
operation, whereby the module continues in a cycle of successive shutdown and power up until the load fault is
removed. During this period, the average current flowing into the fault is significantly reduced. Once the fault is
removed, the module automatically recovers and returns to normal operation.
Output On/Off Inhibit
For applications requiring output voltage on/off control, the modules incorporate an output Inhibit control pin. The
inhibit feature can be used wherever there is a requirement for the output voltage from the regulator to be turned
off.
The power modules function normally when the Inhibit input is left open-circuit, providing a regulated output
whenever a valid source voltage is connected to VI with respect to GND.
Figure 14 shows the typical application of the inhibit function. Note the discrete transistor (Q1). The Inhibit input
has its own internal pull up (see footnotes to electrical characteristics table). The input is not compatible with TTL
logic devices. An open-collector (or open-drain) discrete transistor is recommended for control.
Track
PTV12010W
VI
Inhibit GND
Adjust
+
+
C1
3.3 V
VO
VI
C2
RSET
2 k
1%
0.05 W
Q1
BSS138
1 = Inhibit
C3
L
O
A
D
GND
GND
Figure 14.
Turning Q1 on applies a low voltage to the Inhibit control pin and disables the output of the module. If Q1 is then
turned off, the module executes a soft-start power-up sequence. A regulated output voltage is produced within
25 ms. Figure 15 shows the typical rise in both the output voltage and input current, following the turnoff of Q1.
The turnoff of Q1 corresponds to the rise in the waveform, Q1 VDS. The waveforms were measured with a 5-A
constant current load.
Q1Vds (5 V/Div)
Vo (2 V/Div)
Iin (2 A/Div)
HORIZ SCALE: 10 ms/Div
Figure 15.
14
www.ti.com
PTV12010L
PTV12010W
SLTS234 – DECEMBER 2004
Auto-Track™ Function
The Auto-Track function is unique to the PTH/PTV family, and is available with all POLA products. Auto-Track
was designed to simplify the amount of circuitry required to make the output voltage from each module power up
and power down in sequence. The sequencing of two or more supply voltages during power up is a common
requirement for complex mixed-signal applications, that use dual-voltage VLSI ICs such as DSPs,
microprocessors, and ASICs.
How Auto-Track™ Works
Auto-Track works by forcing the module output voltage to follow a voltage presented at the Track control pin 1.
This control range is limited to between 0 V and the module set-point voltage. Once the track-pin voltage is
raised above the set-point voltage, the module's output remains at its set point 2. As an example, if the Track pin
of a 2.5-V regulator is at 1 V, the regulated output will be 1 V. But if the voltage at the Track pin rises to 3 V, the
regulated output does not go higher than 2.5 V.
When under Auto-Track control, the regulated output from the module follows the voltage at its Track pin on a
volt-for-volt basis. By connecting the Track pin of a number of these modules together, the output voltages follow
a common signal during power up and power down. The control signal can be an externally generated master
ramp waveform, or the output voltage from another power supply circuit 3. For convenience, the Track input
incorporates an internal RC-charge circuit. This operates off the module input voltage to produce a suitable rising
waveform at power up.
Typical Application
The basic implementation of Auto-Track allows for simultaneous voltage sequencing of a number of Auto-Track
compliant modules. Connecting the Track control pins of two or more modules forces the Track control of all
modules to follow the same collective RC-ramp waveform, and allows them to be controlled through a single
transistor or switch; see Q1 in Figure 16.
To initiate a power-up sequence, it is recommended that the Track control first be pulled to ground potential. This
is done at or before input power is applied to the modules, and then held for at least 10 ms thereafter. This brief
period gives the modules time to complete their internal soft-start initialization. Applying a logic level high signal
to the circuit On/Off Control turns Q1 on and applies a ground signal to the Track pins. After completing their
internal soft-start intialization, the output of all modules remains at zero volts while Q1 is on.
Q1 may be turned off 10 ms after a valid input voltage has been applied to the modules. This allows the track
control voltage to automatically rise to the module input voltage. During this period, the output voltage of each
module rises in unison with other modules to its respective set-point voltage.
Figure 17 shows the output voltage waveforms from the circuit of Figure 16 after the On/Off Control is set from a
high-level to a low-level voltage. The waveforms, VO1 and VO2 represent the output voltages from the two power
modules, U1 (3.3 V) and U2 (2 V), respectively. VO1 and VO2 are shown rising together to produce the desired
simultaneous power-up characteristic.
The same circuit also provides a power-down sequence. Power down is the reverse of power up, and is
accomplished by lowering the track control voltage back to zero volts. The important constraint is that a valid
input voltage must be maintained until the power down is complete. It also requires that Q1 be turned off
relatively slowly. This is so that the Track control voltage does not fall faster than Auto-Track slew rate capability,
which is 1 V/ms. The components R1 and C1 in Figure 16 limit the rate at which Q1 pulls down the Track control
voltage. The values of 100 kΩ and 0.1 µF correlate to a decay rate of about 0.17 V/ms.
The power-down sequence is initiated with a low-to-high transition at the On/Off Control input to the circuit.
Figure 18 shows the power-down waveforms. As the Track control voltage falls below the nominal set-point
voltage of each power module, then its output voltage decays with all the other modules under Auto-Track
control.
Notes on Use of Auto-Track™
1. The Track pin voltage must be allowed to rise above the module set-point voltage before the module can
regulate at its adjusted set-point voltage.
2. The Auto-Track function tracks almost any voltage ramp during power up, and is compatible with ramp
speeds of up to 1 V/ms.
3. The absloute maximum voltage that may be applied to the Track pin is the input voltage VI.
15
PTV12010L
PTV12010W
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SLTS234 – DECEMBER 2004
4. The module does not follow a voltage at its Track control input until it has completed its soft-start
initialization. This takes about 10 ms from the time that the module has sensed that a valid voltage has been
applied to its input. During this period, it is recommended that the Track pin be held at ground potential.
5. The module is capable of both sinking and sourcing current when following a voltage at its Track pin.
Therefore, start up into an output prebias cannot be supported when a module is under Auto-Track control.
Note: A prebias holdoff is not necessary when all supply voltages rise simultaneously under the control of
Auto-Track.
6. The Auto-Track function can be disabled by connecting the Track pin to the input voltage (VI). When
Auto-Track is disabled, the output voltage rises at a quicker and more linear rate after input power is applied.
U1
Trac k
GND
+
C1
PTV12010W
GND
VO1 = 3.3 V
VO
Adjust
+
VI
12 V
C3
C2
R2
2 k
C1
0.1 F
U2
Trac k
VI
C1
VO2 = 2 V
VO
Adjust
C3
C2
0V
PTH12050W
GND
+
R1
100 k
Q1
BSS138
+
On/Off Control
1 = Power Down
0 = Power Up
R3
8.06 k
Figure 16. Sequenced Power Up and Power Down Using Auto-Track
Vo1 (1 V/Div)
Vo1 (1 V/Div)
Vo2 (1 V/Div)
Vo2 (1 V/Div)
On/Off Control
(5 V/Div)
On/Off Control
(5 V/Div)
HORIZ SCALE: 10 ms/Div
Figure 17. Simultaneous Power Up With Auto-Track
Control
HORIZ SCALE: 10 ms/Div
Figure 18. Simultaneous Power Down With Auto-Track
Control
Prebias Start-Up Capability
A prebias start-up condition occurs as a result of an external voltage being present at the output of a power
module prior to its output becoming active. This often occurs in complex digital systems when current from
another power source is backfed through a dual-supply logic component, such as an FPGA or ASIC. Another
path might be via clamp diodes, sometimes used as part of a dual-supply power-up sequencing arrangement. A
16
PTV12010L
PTV12010W
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SLTS234 – DECEMBER 2004
prebias can cause problems with power modules that incorporate synchronous rectifiers. This is because under
most operating conditions, such modules can sink as well as source output current. The 12-V input modules
incorporate synchronous rectifiers, but do not sink current during start up, or whenever the Inhibit pin is held low.
Start up includes an initial delay (approximately 8–15 ms), followed by the rise of the output voltage under the
control of the module internal soft-start mechanism; see Figure 19.
Conditions for Prebias Holdoff
In order for the module to allow an output prebias voltage to exist (and not sink current), certain conditions must
be maintained. The module holds off a prebias voltage when the Inhibit pin is held low, and whenever the output
is allowed to rise under soft-start control. Power up under soft-start control occurs on the removal of the ground
signal to the Inhibit pin (with input voltage applied), or when input power is applied with Auto-Track disabled2. To
further ensure that the regulator does not sink output current (even with a ground signal applied to its Inhibit), the
input voltage must always be greater than the applied prebias source. This condition must exist throughout the
power-up sequence3.
The soft-start period is complete when the output begins rising above the prebias voltage. Once it is complete,
the module functions as normal and sinks current if a voltage higher than the nominal regulation value is applied
to its output.
Note: If a prebias condition is not present, the soft-start period is complete when the output voltage has risen to
either the set-point voltage, or the voltage applied at the module Track control pin, whichever is lowest, to its
output.
Demonstration Circuit
Figure 20 shows the start-up waveforms for the demonstration circuit shown in Figure 21. The initial rise in VO2 is
the prebias voltage, which is passed from the VCCIO to the VCORE voltage rail through the ASIC. Note that the
output current from the module (IO2) is negligible until its output voltage rises above the applied prebias.
Vin (5 V/Div)
Vo1 (1 V/Div)
Vo (1 V/Div)
Vo2 (1 V/Div)
Io2 (5 A/Div)
Start−Up
Period
HORIZ SCALE 5 ms/Div
Figure 19. PTV12010W Start Up
HORIZ SCALE: 10 ms/Div
Figure 20. Prebias Start-Up Waveforms
NOTES:
1. The prebias start-up feature is not compatible with Auto-Track. If the rise in the output is limited by the
voltage applied to the Track control pin, the output sinks current during the period that the track control
voltage is below that of the back-feeding source. For this reason, Auto-Track should be disabled when not
being used. This is accomplished by connecting the Track pin to the input voltage, VI. This raises the Track
pin well above the set-point voltage prior to start up, thereby defeating the Auto-Track feature.
2. To further ensure that the regulator output does not sink current when power is first applied (even with a
ground signal applied to the Inhibit control pin), the input voltage must always be greater than the applied
prebias source. This condition must exist throughout the power-up sequence of the power system.
17
PTV12010L
PTV12010W
www.ti.com
SLTS234 – DECEMBER 2004
Tra ck
Sense
VI = 12 V
VO1 = 3.3 V
VI
PTV12020W
Inhibit
C1
+
GND
C2
VO
Adjust
Tra ck
R4
100 k
TL7702B
C7
0.1 F
PTV12010W
Inhibit
8
VCC
7 SENSE
5
RESET
2
RESIN
1 REF
6
RESET
3
CT
GND
4
C8
R5
0.68 F
10 k
C3
R1
2 k
VI
R3
11 k
+
GND
VO2 = 1.8 V
VO
+
Vadj
IO2
R2
11.5 k
+
VC ORE
+
C4
C6
C5
Figure 21. Application Circuit Demonstrating Prebias Startup
18
ASIC
VC CI O
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