Data Sheet Schottky barrier diode RB751S-40 Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.12±0.05 0.8 0.6 0.8±0.05 1.6±0.1 1.2±0.05 1.7 Features 1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability EMD2 Construction Silicon epitaxial planar Structure 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 0.2±0.05 φ1.5±0.05 2.0±0.05 φ1.55±0.05 1.25 0.06 1.26±0.05 0 3.5±0.05 0 0.6 1.25 0.06 1.3±0.06 0 0 2.40±0.05 2.45±0.1 8.0±0.15 1.75±0.1 4.0±0.1 0.2 φ0.5 0.95±0.06 0.90±0.05 空ポケット Empty pocket 0 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) Average retified forward current Io IFSM Forward currnt surge peak(60Hz/1cyc) Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage 2.0±0.05 4.0±0.1 Limits 0.76±0.05 0.75±0.05 Unit V V mA mA °C °C 40 30 30 200 125 -40 to +125 Min. Typ. Max. Unit - - 0.37 V Conditions IF=1mA Reverse current IR - - 0.5 μA VR=30V Capacitance between terminals Ct - 2 - pF VR=1V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.C Data Sheet RB751S-40 Electrical characteristic curves Ta=125℃ Ta=125℃ 1 Ta=-25℃ Ta=25℃ 0.1 Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.01 0 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=75℃ f=1MHz 100 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 1000 100 0.001 100 200 300 400 500 600 700 800 900 100 0 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 1 0.1 30 0 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF分布 1000 280 270 260 800 700 600 500 400 300 200 AVE:267.4mV 100 250 6 5 4 3 2 AVE:2.00pF 0 Ct DISPERSION MAP 20 10 Ifsm 15 15 8.3ms 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc 10 5 AVE:7.30A 5 9 Ifsm 8 t 7 6 5 4 3 2 1 0 0 1 IFSM DISPERSION MAP Mounted on epoxy board IM=1mA 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.003 0.04 IF=10mA 1000 1ms 300us Rth(j-c) 100 10 0.001 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) DC time 0.03 D=1/2 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 7 IR DISPERSION MAP 20 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 8 1 AVE:185.5nA 0 VF DIPERSION MAP 10000 Ta=25℃ f=1MHz VR=1V n=10pcs 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 290 10 Ta=25℃ VR=30V n=30pcs 900 Ta=25℃ IF=1mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 300 Sin(θ＝180) 0.02 0.01 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1000 0.002 DC D=1/2 Sin(θ＝180) 0.001 0 0.00 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 2/3 0.05 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2011.03 - Rev.C Data Sheet RB751S-40 0.1 0A 0V 0.08 0.06 DC 0.04 D=1/2 0.02 Io t T VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.1 0A 0V 0.08 0.06 DC 0.04 D=1/2 Io VR D=t/T VR=15V Tj=125℃ t T 0.02 Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 3/3 2011.03 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A