ROHM RB751CS

Data Sheet
Schottky barrier diode
RB751CS-40
Dimensions (Unit : mm)
Applications
Low current rectification
Land size figure (Unit : mm)
0.55
0.45
0.16±0.05
0.6±0.05
0.9±0.05
3) High reliability
Structure
Silicon epitaxial planer
1.0±0.05
0.45
0.5
Features
1) Ultra Small mold type(VMN2)
2) Low VF
VM D2
Structure
0.156
0.37±0.03
0.35±0.1
ROHM : VMN2
dot (year week factory)+day
Taping dimensions (Unit : mm)
2±0.05
0.7±0.05
2±0.05
φ1.55
0.2±0.05
8.0±0.2
1.1±0.05
3.5±0.05
1.75±0.1
4±0.1
φ0.5
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Average rectified forward current
Io
Forward current surge peak(60Hz/1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
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© 2011 ROHM Co., Ltd. All rights reserved.
Limits
Unit
V
V
mA
mA
°C
°C
40
30
30
200
125
40 to 125
Symbol
VF
IR
Min.
Ct
-
Typ.
2
1/3
0.52
4.0±0.1
Max.
Unit
0.37
V
0.5
μA
-
pF
Conditions
IF=1mA
VR=30V
VR=1V , f=1MHz
2011.05 - Rev.A
Data Sheet
RB751CS-40
Electrical characteristic curves
100000
Ta=75C
10
Ta=125C
1
Ta=25C
Ta=-25C
0.1
0.01
10000
Ta=75C
Ta=25C
100
Ta=-25C
10
1
0.1
1
0
100 200 300 400 500 600 700 800
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
5
10
15
20
25
30
35
0
40
Ta=25C
VR=30V
n=30pcs
310
300
290
AVE:304.2mV
800
700
600
500
400
300
AVE:111.0nA
200
6
5
4
3
2
1
0
AVE:1.81pF
Ct DISPERSION MAP
10
1cyc
8.3ms
10
AVE:3.40A
5
0
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
PEAK SURGE
FORWARD CURRENT:I FSM(A)
REVERSE RECOVERY TIME:trr(ns)
30
Ifsm
15
10
AVE:11.7ns
5
Ifsm
8
8.3ms
6
4
2
1
trr DISPERSION MAP
IFSM DISRESION MAP
t
6
4
2
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
100
Rth(j-a)
0.04
Rth(j-c)
100
Mounted on epoxy board
IF=100mA
IM=10mA
1ms
time
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0.05
1000
8
8.3ms
1cyc
0
0
10
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
IR DISPERSION MAP
15
25
7
0
VF DISPERSION MAP
20
20
8
100
280
15
9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
900
REVERSE CURRENT:IR(nA)
320
10
10
1000
Ta=25C
IF=1mA
n=30pcs
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
330
FORWARD VOLTAGE:V F(mV)
f=1MHz
1000
0.001
PEAK SURGE
FORWARD CURRENT:I FSM(A)
10
Ta=125C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F(mA)
100
0.03
D=1/2
Sin(=180)
0.02
DC
0.01
300us
10
0.001
0
0.01
0.1
1
10
TIME:t(ms)
Rth-t CHARACTERISTICS
2/3
100
1000
0
0.01
0.02
0.03
0.04
0.05
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2011.05 - Rev.A
0.003
0.1
0.002
D=1/2
DC
0.001
Sin(=180)
0.1
0.08
0A
Io
0V
VR
t
T
0.06
D=t/T
VR=20V
Tj=125C
DC
0.04
D=1/2
0.02
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
Data Sheet
RB751CS-40
0.08
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
40
0
25
VR
0.06
T
DC
D=t/T
VR=20V
Tj=125C
D=1/2
0.04
0.02
Sin(=180)
0
0
Io
0V
t
Sin(=180)
0
0A
50
75
100
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
3/3
125
0
0
25
50
75
100
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
125
2011.05 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A