ROHM RB520CS

Data Sheet
Schottky barrier diode
RB520CS-30
 Dimensions (Unit : mm)
 Land size figure (Unit : mm)
0.55
0.5
0.45
Applications
Low current rectification
0.45
Features
1) Ultra Small power mold type. (VMN2)
2) Low IR
VMN2
3)High reliability.
Construction
Silicon epitaxial planar
Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta25C)
Parameter
Reverse voltage (DC)
Average rectiied forward current
Forward current surge peak （60Hz/1cyc）
Junction temperature
Storage temperature
Electrical characteristics (Ta25C)
Parameter
Limits
Symbol
VR
Io
IFSM
Tj
Tstg
Unit
V
mA
mA
30
100
500
150
40 to 150
C
C
Forward voltage
Symbol
VF
Min.
-
Typ.
-
Max.
0.45
Unit
V
Reverse current
IR
-
-
0.5
A
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1/3
Conditions
IF=10mA
VR=10V
2011.05 - Rev.D
Data Sheet
RB520CS-30
1000000
1000
100
Ta=125C
Ta=-25C
1
Ta=25C
0.1
0.01
Ta=75C
10000
1000
Ta=25C
Ta=-25C
10
1
0
100
200
300
400
500
1
0
600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
20
30
0
360
900
350
340
330
AVE:338 : 8mV
700
600
500
400
300
AVE : 100.5nA
200
17
16
15
14
13
12
11
0
10
AVE : 15.94pF
IR DISPERSION MAP
Ct DISPERSION MAP
10
10
8.3ms
10
AVE : 3.90A
5
0
Ifsm
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1cyc
15
8.3ms
1cyc
5
Ifsm
t
5
0
0
1
10
1
100
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISRESION MAP
0.1
1000
18
100
VF DISPERSION MAP
20
20
Ta25C
f1MHz
VR0V
n10pcs
19
Ta=25C
VR=10V
n=30pcs
800
320
Ifsm
5
10
15
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
20
1000
Ta=25C
IF=10mA
n=30pcs
REVERSE CURRENT:IR(nA)
0.02
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=10mA
1ms
IF=100mA
FORWARD POWER
DISSIPATION:Pf(W)
0.08
REVERSE POWER
DISSIPATION:PR (W)
FORWARD VOLTAGE:V F(mV)
10
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
370
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
100
0.001
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=75C
100000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
f=1MHｚ
Ta=125C
100
D1/2
0.06
DC
Sin(=180)
0.04
0.02
time
0.015
0.01
D1/2
DC
0.005
Sin(=180)
300us
10
0.001
0
0.01
0.1
1
10
TIME : t(s)
Rth-t CHARACTERISTICS
100
1000
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© 2011 ROHM Co., Ltd. All rights reserved.
0
0
0.05
0.1
0.15
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2/3
0.2
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
2011.05 - Rev.D
0.3
0.3
0A
Io
0V
VR
t
0.2
DC
T
D=t/T
VR=15V
Tj=125C
D=1/2
0.1
Sin(=180)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
Data Sheet
RB520CS-30
0A
Io
0V
VR
t
0.2
DC
T
D=t/T
VR=15V
Tj=125C
D=1/2
0.1
Sin(=180)
0
0
0
25
50
75
100
AMBIENT TEMPERATURE : Ta(・C)
Derating Curve"(Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
125
0
25
50
75
100
125
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3/3
2011.05 - Rev.D
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A