Data Sheet Band Switching Diode 1SS390 Applications High frequency switching Dimensions (Unit : mm) Land size figure (Unit : mm) 0.12±0.05 0.8 0.6 0.8±0.05 1.6±0.1 1.2±0.05 1.7 Features 1)Ultra small mold type. (EMD2) 2)High reliability EMD2 Construction Silicon epitaxial Structure 0.3±0.05 0.6±0.1 JEDEC :SOD-523 ROHM : EMD2 JEITA : SC-79 Taping specifications(Unit : mm) 0.2±0.05 φ1.5±0.05 2.0±0.05 φ1.55±0.05 1.25 0.06 1.26±0.05 0 3.5±0.05 0 0.6 1.25 0.06 1.3±0.06 0 0 2.40±0.05 2.45±0.1 8.0±0.15 1.75±0.1 4.0±0.1 0.2 φ0.5 0.95±0.06 0.90±0.05 空ポケット Empty pocket 0 Absolute maximum ratings(Ta=25°C) Parameter Symbol Forward current (DC) IF VR Reverse voltage (DC) Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage 2.0±0.05 4.0±0.1 Limits 0.76±0.05 0.75±0.05 Unit mA V °C °C 100 35 125 -55 to +125 Min. Typ. Max. Unit - - 1.0 V Conditions IF=10mA Reverse current Capacitance between terminals IR - - 10 nA VR=25V Ct - - 1.2 pF VR=6V , f=1MHz Forward operating resistance rf - - 0.9 IF=2mA , f=100MHz , RL=100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.D Data Sheet 1SS390 Ta=75℃ 1 Ta=25℃ Ta=-25℃ 0.1 Ta=75℃ 1 0.1 Ta=25℃ 0.01 Ta=-25℃ 0.001 1 0.1 0.0001 0 1.1 1.2 10 15 20 25 30 0 35 10 820 0.16 0.9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) AVE:840.2mV 0.14 0.12 0.1 0.08 AVE:0.0145nA 0.06 0.04 0.8 0.7 0.5 0.4 0.3 0.2 0.1 0 0 VF DISPERSION MAP AVE:0.849pF IR DISPERSION MAP Ct DISPERSION MAP 100 1cyc Ifsm 15 8.3ms 10 AVE:4.95A 5 0 100 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 10 1 Ifsm 8.3ms 8.3ms 1cyc 0.1 1000 10 1 Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS IF=10mA 10 1ms Sin(θ＝180) D=1/2 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) Mounted on epoxy board IM=1mA FORWARD POWER DISSIPATION:Pf(W) Rth(j-c) DC 0.15 DC 0.1 D=1/2 0.1 Sin(θ＝180) 0A 0V 0.05 time 300us 1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1000 100 0.2 0.2 Rth(j-a) 100 t 0.1 1 IFSM DISPERSION MAP Ta=25℃ VR=6V f=1MHz n=10pcs 0.6 0.02 810 30 1 Ta=25℃ VR=25V n=30pcs 0.18 840 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 0.2 Ta=25 IF=100mA n=30pcs 850 830 5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 860 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) f=1MHz 10 Ta=125℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) Ta=125℃ 0.01 FORWARD VOLTAGE:VF(mV) 10 100 100 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 0.2 0 Io VR D=t/T VR=40V Tj=125℃ T 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve(Io-Ta) t 125 2011.03 - Rev.D Data Sheet 1SS390 10 0.2 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC 0.15 D=1/2 Sin(θ＝180) 0.1 0A 0V 0.05 Io t T 0 0 VR D=t/T VR=40V Tj=125℃ 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8 6 4 AVE:0.96kV 2 0 125 AVE:5.45kV C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 2011.03 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A