SW6N70DA

SW6N70DA
N-channel Enhanced mode TO251S/TO252/TO220F/TO251/TO251NX MOSFET
Features






BVDSS : 700V
TO-251 TO-251S TO-251NX
TO-220F TO-252
ID
High ruggedness
Low RDS(ON) (Typ 1.7Ω)@VGS=10V
Low Gate Charge (Typ 26nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: TV-Power，LED，
Charge
: 6A
RDS(ON) : 1.7Ω
2
1
2
1
2
3
1
3
2
1
3
2
1
3
2
3
1
1. Gate 2. Drain 3. Source
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
2
3
4
5
Sales Type
SW SI 6N70DA
SW D 6N70DA
SW F 6N70DA
SW I 6N70DA
SWNI 6N70DA
Marking
SW6N70DA
SW6N70DA
SW6N70DA
SW6N70DA
SW6N70DA
Package
TO-251S
TO-252
TO-220F
TO-251
TO-251NX
Packaging
TUBE
REEL
TUBE
TUBE
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
Value
Parameter
TO251S TO252
Drain to source voltage
TO220F
TO251 TO251NX
Unit
700
V
Continuous drain current
(@TC=25oC)
6*
A
Continuous drain current
(@TC=100oC)
3.8*
A
24
A
± 30
V
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
216
mJ
EAR
Repetitive avalanche energy
(note 1)
20
mJ
dv/dt
Peak diode recovery dv/dt
(note 3)
5
V/ns
PD
(note 1)
Total power dissipation
Derating factor above
(@TC=25oC)
25oC
138.8
195.3
21.9
138.8
147
W
1.11
1.56
0.18
1.11
1.18
W/oC
TSTG, TJ
Operating junction temperature & storage
temperature
-55 ~ + 150
oC
TL
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
TO252
TO220F
0.64
5.7
0.9
0.85
oC/W
46.9
80
100
oC/W
Rthjc
Thermal resistance, Junction to case
0.9
Rthja
Thermal resistance, Junction to ambient
80
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
TO251 TO251NX
Unit
TO251S
Nov. 2015. Rev. 3.0
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SW6N70DA
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
IGSS
700
V
V/oC
0.42
VDS=700V, VGS=0V
1
uA
VDS=560V, TC=125oC
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
4.5
V
1.9
Ω
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID=3A
1.7
Forward transconductance
VDS=30V, ID=3A
5
Gfs
2.5
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
18
td(on)
Turn on delay time
21
tr
td(off)
tf
Qg
Rising time
Turn off delay time
1040
VGS=0V, VDS=25V, f=1MHz
88
VDS=350V, ID=6A，RG=25Ω,
VGS=10V
(note 4,5)
pF
34
ns
65
Fall time
33
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Rg
Gate resistance
26
VDS=560V, VGS=10V, ID=6A
(note 4,5)
5.5
nC
11
VDS=0V, Scan F mode
Ω
2.5
Source to drain diode ratings characteristics
Symbol
Parameter
IS
Continuous source current
ISM
VSD
Test conditions
Min.
Typ.
Max.
Unit
6
A
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
24
A
Diode forward voltage drop.
IS=6A, VGS=0V
1.4
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=6A, VGS=0V,
dIF/dt=100A/us
315
ns
2.95
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 12mH, IAS = 6A, VDD =100 V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 6A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
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Nov. 2015. Rev. 3.0
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SW6N70DA
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs. diode
forward voltage
Fig. 6. On resistance variation
vs. junction temperature
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SW6N70DA
Fig. 7. Maximum safe operating area(TO-251S)
Fig. 8. Maximum safe operating area(TO-252)
Fig. 9. Maximum safe operating area(TO-220F)
Fig. 10. Maximum safe operating area(TO-251)
Fig. 11. Maximum safe operating area(TO-251NX)
Fig. 12. Capacitance Characteristics
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SW6N70DA
Fig. 13. Transient thermal response curve(TO-251S)
Fig. 14. Transient thermal response curve(TO-252)
Fig. 15. Transient thermal response curve(TO-220F)
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SW6N70DA
Fig. 16. Transient thermal response curve(TO-251)
Fig. 17. Transient thermal response curve(TO-251NX)
Fig. 18. Gate charge test circuit & waveform
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SW6N70DA
Fig. 19. Switching time test circuit & waveform
VDS
90%
RL
RGS
VDS
VDD
VIN
10VIN
DUT
10%
10%
td(on)
tf
td(off)
tr
tON
tOFF
Fig. 20. Unclamped Inductive switching test circuit & waveform
Fig. 21. Peak diode recovery dv/dt test circuit & waveform
DUT
+ V
DS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VF
VDD
Body diode forward voltage drop
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SW6N70DA
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
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