SW6N65K

SW6N65K
N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-262 MOSFET
Features






TO-251
TO-220F
High ruggedness
Low RDS(ON) (Typ 0.8Ω)@VGS=10V
Low Gate Charge (Typ 17nC)
Improved dv/dt Capability
100% Avalanche Tested
1
23
Application:Charge,LED
TO-262
TO-252
BVDSS : 650V
ID
: 6A
RDS(ON) : 0.8Ω
1
2
1
3
2
2
1 2
3
3
1
1. Gate 2. Drain 3. Source
3
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
2
3
4
SW F 6N65K
SW I 6N65K
SW D 6N65K
SW U 6N65K
SW6N65K
SW6N65K
SW6N65K
SW6N65K
TO-220F
TO-251
TO-252
TO-262
TUBE
TUBE
REEL
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
Value
Parameter
TO-220F TO-251 TO-252 TO-262
Drain to source voltage
Unit
650
V
Continuous drain current
(@TC=25oC)
6*
A
Continuous drain current
(@TC=100oC)
3.8*
A
24
A
± 30
V
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
120
mJ
EAR
Repetitive avalanche energy
(note 1)
9
mJ
dv/dt
Peak diode recovery dv/dt
(note 3)
5
V/ns
PD
TSTG, TJ
TL
(note 1)
Total power dissipation (@TC=25oC)
Derating factor above
25oC
24.5
147
156
192.3
W
0.2
1.2
1.3
1.54
W/oC
Operating junction temperature & storage temperature
-55 ~ + 150
oC
300
oC
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
TO-220F TO-251 TO-252 TO-262
Rthjc
Thermal resistance, Junction to case
5.10
0.85
Rthja
Thermal resistance, Junction to ambient
49.4
80.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
0.80
Unit
0.65
oC/W
70
oC/W
Nov. 2015. Rev. 2.0
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SW6N65K
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
IGSS
650
V
VDS=650V, VGS=0V
VDS=520V,
V/oC
0.64
TC=125oC
1
uA
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
5
V
0.9
Ω
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID=3A
0.8
Forward transconductance
VDS=30V, ID=3A
3.5
Gfs
3
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
td(on)
Turn on delay time
tr
td(off)
tf
Qg
Rising time
Turn off delay time
690
VGS=0V, VDS=200V, f=1MHz
18.5
pF
3.6
12
VDS=325V, ID=6A, RG=25Ω,
VGS=10V
(note 4,5)
30
ns
34
Fall time
24
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Rg
Gate resistance
17
VDS=520V, VGS=10V, ID=6A
(note 4,5)
4
nC
9
VDS=0V, Scan F mode
Ω
2.5
Source to drain diode ratings characteristicsa
Symbol
Parameter
IS
Continuous source current
ISM
VSD
Test conditions
Min.
Typ.
Max.
Unit
6
A
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
24
A
Diode forward voltage drop.
IS=6A, VGS=0V
1.4
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=6A, VGS=0V,
dIF/dt=100A/us
276
ns
3.4
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 60mH, IAS = 2A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 6A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
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Nov. 2015. Rev. 2.0
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SW6N65K
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs. diode
forward voltage
Fig. 6. On resistance variation
vs. junction temperature
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SW6N65K
Fig. 7. Maximum safe operating area（TO-220F）
Fig. 9. Maximum safe operating area（TO-252）
Fig. 8. Maximum safe operating area（TO-251）
Fig. 10. Maximum safe operating area（TO-262）
Fig. 11. Capacitance Characteristics
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SW6N65K
Fig. 12. Transient thermal response curve （TO-220F）
Fig. 13. Transient thermal response curve （TO-251）
Fig. 14. Transient thermal response curve（ TO-252）
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SW6N65K
Fig. 15. Transient thermal response curve（ TO-262）
Fig. 16. Gate charge test circuit & waveform
Fig. 17. Switching time test circuit & waveform
VDS
90%
RL
VDS
VDD
VIN
10VIN
RGS
DUT
10%
10%
td(on)
tr
tON
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td(off)
tf
tOFF
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SW6N65K
Fig. 18. Unclamped Inductive switching test circuit & waveform
Fig. 19. Peak diode recovery dv/dt test circuit & waveform
DUT
+ V
DS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
10VGS
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VDD
VF
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
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