High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features 1) High transition frequency. (Typ. fT= 3.2GHz) 2) Small rbb’Cc and high gain. (Typ. 4ps) 3) Small NF. Dimensions (Unit : mm) 2SC5662 0.2 1.2 0.32 0.8 1.2 (3) 0.2 (1)(2) 0.22 0.4 0.4 0.13 0.5 (1) Base (2) Emitter (3) Collector 0.8 Packaging specifications and hFE ROHM : VMT3 Type 2SC5662 2SC4726 2SC4083 2SC3838K Package hFE Marking Code Basic ordering unit (pieces) VMT3 NP AD T2L EMT3 NP AD TL UMT3 NP 1D T106 SMT3 NP AD T146 2SC4726 0.7 1.6 0.55 0.3 (2) 1.6 0.8 (3) 0.2 0.15 0.5 0.5 8000 3000 3000 3000 ROHM : EMT3 EIAJ : SC-75A 1.0 2SC4083 2.0 0.1Min. (1) 0.2 (1) Emitter (2) Base (3) Collector 0.9 0.2 0.3 0.7 (1) (2) Parameter Symbol Limits Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SC5662, 2SC4726 Collector power dissipation 2SC4083, 2SC3838K Junction temperature Storage temperature VCBO VCEO 20 11 3 50 0.15 0.2 V V V mA 150 −55 to +150 °C °C Tj Tstg ROHM : UMT3 EIAJ : SC-70 0.15 1.3 2.9 2SC3838K 1.1 0.4 W (1) Emitter (2) Base (3) Collector Each lead has same dimensions 0.8 (3) (2) (1) 0.95 0.95 ROHM : SMT3 EIAJ : SC-59 0.15 1.9 0.3Min. PC 0.65 0.65 1.6 2.8 VEBO IC 0.1Min. Absolute maximum ratings (Ta=25C) 2.1 1.25 (3) (1) Emitter (2) Base (3) Collector Each lead has same dimensions Absolute maximum ratings (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SC5662, 2SC4726, 2SC4083, 2SC3838K Transition frequency Output capacitance Collector-base time constant Noise factor Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO 20 11 3 − − − − − − − − − − 0.5 0.5 V V V μA μA VEB = 2V − − 0.5 V IC/IB = 10mA/5mA hFE 56 − 180 − VCE/IC = 10V/5mA ICBO IEBO VCE(sat) Conditions IC = 10μA IC = 1mA IE = 10μA VCB = 10V fT 1.4 3.2 − GHz Cob − 0.8 1.5 pF VCE = 10V , IE = −10mA , f = 500MHz VCB = 10V , IE = 0A , f = 1MHz rbb'⋅Cc − − 4 3.5 12 − ps dB VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50Ω NF VCB = 10V , IC = 10mA , f = 31.8MHz This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/2 2010.01 - Rev.D 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Data Sheet 200 100 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 500 200 100 50 IC/IB=10 20 IC/IB=2 10 0.1 0.2 COLLECTOR CURRENT : IC (mA) 2.0 Cob Cre 0.5 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 1 2 5 10 20 1.0 0.5 0.2 0.1 −0.1 −0.2 50 50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Capacitance vs. reverse bias voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ rbb' (ps) 50 −0.5 −1 −2 Ta=25°C VCE=10V −5 −10 −20 −50 EMITTER CURRENT : IE (mA) Fig.2 Collector-emitter saturation voltage vs. collector current COLLECTOR TO BASE TIME CONSTANT : Cc OUTPUT CAPACITANCE : Cob (pF) FEEDBACK CAPACITANCE : Cre (pF) Ta=25°C f=1MHz IE=0A 1.0 0.5 2.0 COLLECTOR CURRENT : IC (mA) Fig.1 DC current gain vs. collector current 5.0 5.0 Ta=25°C TRANSITIONFREQUENCY : fT (GHz) Ta=25°C VCE=10V Fig.3 Gain bandwidth product vs. emitter current Ta=25°C VCE=6V f=500MHz Ta=25°C VCE=10V f=31.8MHz NOISE FIGURE : NF (dB) DC CURRENT TRANSFER RATIO : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Electric characteristics curves 20 10 5.0 20 10 2.0 1.0 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.5 Collector to base time constance vs. collector current 2/2 0 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.6 Noisfactor vs. collector current characteristics 2010.01 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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