ROHM 2SD1383K_11

High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k resistor between base and emitter.
3) Complements the 2SB852K.
Dimensions (Unit : mm)
2SD1383K
Packaging specifications
Type
2SD1383K
Package
hFE
SMT3
B
Marking
W∗
Code
Basic ordering unit (pieces)
T146
3000
(1)Emitter
(2)Base
(3)Collector
Each lead has same dimensions
∗ Denotes hFE
Circuit diagram
C
B
RBE
4kΩ
E : Emitter
B : Base
C : Collector
E
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCES
VEBO
IC
Collector current
Collector power dissipation
Junction temperature
Storage temperature
PC
Tj
Tstg
Limits
40
32
6
0.3
1.5
0.2
150
−55 to +150
Unit
V
∗1
V
V
A (DC)
A (Pulse) ∗2
W
°C
°C
∗1 RBE=0Ω
∗2 Single pulse Pw=10ms
Electrical characteristics (Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
hFE
Collector-emitter saturation voltage
Transition frequency
Output capacitance
VCE(sat)
fT
Cob
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Min.
40
32
6
−
−
5000
−
−
−
Typ.
−
−
−
−
−
−
−
250
3
Max.
−
−
−
1
1
−
1.5
−
−
Unit
V
V
V
μA
μA
−
V
MHz
pF
Conditions
IC=100μA
IC= −1mA , RBE=0Ω
IE=100μA
VCB=24V
VEB=4.5V
VCE=5V, IC=0.1A
IC=200mA, IB=0.4mA
∗1
VCE=5V, IE= −10mA, f=100MHz ∗2
VCB=10V, IE=0A, f=1MHz
∗1 Measured using pulse current.
∗2 Transition frequency of the device.
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c 2011 ROHM Co., Ltd. All rights reserved.
○
1/2
2011.10 - Rev.D
2SD1383K
Data Sheet
Electrical characteristic curves
500
50
25
50
20
Ta=25°C
100
Ta= −55°C
75
200
Ta=100°C
100
10
5
0
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
BASE TO EMITTER VOLTAGE : VBE (V)
AMBIENT TEMPERATURE : Ta (°C)
8μA
7μA
50
6μA
5μA
4μA
VCE=5V
Ta=25°C
5V
20000
10000
5000
VCE=3V
2000
DC CURRENT GAIN : hFE
50000
100000
°C
00
°C
25
=1
Ta
50000
C
−55°
20000
10000
1000
5000
500
5
10
20
50 100
200
500 1000 2000
5
COLLECTOR CURRENT : IC (mA)
Ta=25°C
VCE=6V
500
200
100
50
−1
−2
−5
−10
−20
−50 −100
EMITTER CURRENT : IE (mA)
Fig.7 Gain bandwidth product vs. emitter current
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c 2011 ROHM Co., Ltd. All rights reserved.
○
20
50 100
200
500 1000 2000
20
10
5
2
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
2/2
4
5
IC/IB=500
2
Ta= −55°C
1
0.5
100°C
25°C
0.2
0.1
0.5
1
2
5
100
200
500 1000
2000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current ( ΙΙ )
Ta=25°C
f=1MHz
IE=0A
3
Fig.3 Ground emitter output characteristics
COLLECTOR CURRENT : IC (mA)
OUTPUT CAPACITANCE : Cob (pF)
Fig.4 DC current gain vs. collector current ( Ι )
10
3μA
2
1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Ground emitter propagation characteristisc
Fig.1 Power dissipation curves
DC CURRENT GAIN : hFE
9μA
0
0
3.2
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
50
Fig.6 Collector-emitter saturation voltage
vs. collector current
EMITTER INPUT CAPACITANCE : Cib (pF)
25
Ta=25°C
IB=10μA
2
0
0
TRANSISION FREQUWNCY : fT (MHz)
100
VCE=6V
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
POWER DISSIPATION : PC/PCMax (%)
125
20
Ta=25°C
f=1MHz
IE=0A
10
5
2
1
1
2
5
10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Emitter input capacitance
vs. emitter-base voltage
2011.10 - Rev.D
Notice
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R1120A