ROHM RFU5TF6S

Data Sheet
Super Fast Recovery Diode
RFU5TF6S
Series
Ultra Fast Recovery
Dimensions(Unit : mm)
Structure
+0.3
−0.1
+0.3
−0.1
+0.2
−0.1
Applications
General rectification
(3)
+0.4
−0.2
(1)
Features
1)Single type.(TO-220)
2)Ultra high switching speed
Construction
Silicon epitaxial planer
+0.1
−0.05
Absolute maximum ratings(Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics(Tj=25C)
Parameter
Symbol
Conditions
Limits
Unit
Duty0.5
Direct voltage
600
600
5.0
V
V
A
60
A
150
55 to 150
C
C
60Hz half sin wave, Resistance load, Tc=93C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Conditions
Min.
Typ.
Max.
Unit
Forward voltage
Reverse current
VF
IF=5.0A
-
2.2
2.8
V
IR
VR=600V
-
0.02
10
μA
Reverse recovery time (*)
trr
IF=0.5A,IR=1A,Irr=0.25×IR
Rth(j-c)
junction to case
-
15
-
25
4
C/W
Thermal resistance(*)
ns
(*) : Design assurance without measurement.
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1/3
2011.06 - Rev.A
Data Sheet
RFU5TF6S
Electrical characteristic curves
100
100000
1000
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
Tj=150C
10000
Tj=125C
10
REVERSE CURRENT : IR(nA)
Tj=150C
Tj=25C
1
Tj=75C
1000
Tj=75C
100
Tj=25C
10
1
0.1
0
1000
2000
3000
4000
0
5000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
150
200
250
300
10
350
0
2300
AVE : 2132mV
2200
2100
Tｊ=25C
VR=600V
n=20pcs
10
AVE : 28.0nA
1
2000
VF DISPERSION MAP
8.3ms
100
AVE : 93.0A
50
REVERSE RECOVERY TIME : trr(ns)
1cyc
IFSM
Ta=25C
f=1MHz
VR=0V
n=10pcs
AVE : 133.8pF
120
110
100
20
15
AVE : 14.3ns
5
100
10
IFSM
8.3ms
8.3ms
1cyc.
1
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
5
1000
30
130
0
0
25
1000
Tｊ=25C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
25
10
20
Ct DISPERSION MAP
30
150
15
140
IR DISPERSION MAP
200
10
150
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
Tｊ=25C
IF=5A
n=20pcs
2400
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
100
REVERSE CURRENT : IR(nA)
FORWARD VOLTAGE : V F(mV)
100
100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
2500
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT : I FSM(A)
50
f=1MHz
Tj=25C
PEAK SURGE
FORWARD CURRENT : I FSM(A)
FORWARD CURRENT : I F(A)
Tj=125C
100
10
time
100
4
3.5
3
2.5
AVE : 2.73kV
2
1.5
1
0.5
AVE : 1.14kV
0
10
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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100
C=100pF
R=1.5k
C=200pF
R=0
ESD DISPERSION MAP
2/3
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
IFSM
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
4.5
Rth(j-c)
1
0.1
0.001
0.01
0.1
1
10
100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
2011.06 - Rev.A
25
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
FORWARD POWER
DISSIPATION : Pf(W)
20
0V
D=0.5
half sin wave
15
D=0.2
D=0.1
D=0.05
5
6
D=t/T
VR=480V
Tj=150C
D=0.5
5
half sin wave
4
3
D=0.2
2
D=0.1
D=0.05
1
0
T
D=0.8
7
VR
t
D.C.
8
D=0.8
Io
0A
9
10
Data Sheet
RFU5TF6S
0
0
3
6
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
9
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© 2011 ROHM Co., Ltd. All rights reserved.
0
30
60
90
120
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3/3
150
2011.06 - Rev.A
Notice
Notes
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R1120A