Reliability Report

AOS Semiconductor
Product Reliability Report
AOTF15S65L,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
1
This AOS product reliability report summarizes the qualification result for AOTF15S65L.
Accelerated environmental tests are performed on a specific sample size, and then followed by
electrical test at end point. Review of final electrical test result confirms that AOTF15S65L passes
AOS quality and reliability requirements. The released product will be categorized by the process
family and be monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AOTF15S65L has been fabricated using the advanced MOS high voltage process that is
designed to deliver high levels of performance and robustness in switching applications. By
providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply designs.
TM
Details refer to the datasheet.
II. Die / Package Information:
AOTF15S65L
Standard sub-micron
TM
650V, 15A αMOS Power Transistor
Package Type
TO220F
Lead Frame
Bare Cu
Die Attach
Soft solder
Bonding
Al wire
Mold Material
Epoxy resin with silica filler
Moisture Level
Up to Level 1 *
Note * based on info provided by assembler and mold compound supplier
Process
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III. Result of Reliability Stress for AOTF15S65L
Test Item
Test Condition
Time
Point
MSL
Precondition
168hr 85°c
/85%RH +3 cycle
reflow@260°c
Temp = 150°c ,
Vgs=100% of
Vgsmax
-
Temp = 150°c ,
Vds=80% of
Vdsmax
168hrs
500 hrs
1000 hrs
HAST
130 , 85%RH,
33.3 psi, Vgs =
100% of Vgs max
96 hrs
Pressure Pot
121°c , 29.7psi,
RH=100%
96 hrs
HTGB
168hrs
500 hrs
1000 hrs
Lot
Attribution
Total
Sample
size
6 lots
1254pcs
0
JESD22A113
462pcs
0
JESD22A108
Temperature
Cycle
-65°c to 150°c ,
air to air,
250 / 500
cycles
Reference
Standard
77 pcs / lot
462pcs
0
JESD22A108
(Note A*)
6 lots
77 pcs / lot
330pcs
0
JESD22A110
(Note A*)
6 lots
55 pcs / lot
462pcs
0
JESD22A102
(Note A*)
77 pcs / lot
0
JESD22A104
6 lots
(Note A*)
HTRB
Number
of
Failures
6 lots
6 lots
(Note A*)
462pcs
77 pcs / lot
Note A: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 4
MTTF = 29742 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOTF15S65L). Failure Rate Determination is based on
JEDEC Standard JESD 85. FIT means one failure per billion hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10
9
8
MTTF = 10 / FIT =2.61 x 10 hrs = 29742 years
9
/ [2x (12x77x1000) x258] = 4
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
Af
258
87
32
13
5.64
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
130 deg C
150 deg C
2.59
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