SAMWIN SW630A N-channel TO-220/D-PAK MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 0.4 Ω)@VGS=10V ■ Gate Charge (Typ 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-252 BVDSS : 200V ID 1 1 2 : 10A RDS(ON) : 0.4ohm 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. 3 Order Codes Item 1 2 Sales Type SW P 630A SW D 630A Marking SW630 SW630 Package TO-220 TO-252 Packaging TUBE REEL Absolute maximum ratings Symbol Value Parameter TO-220 Drain to Source Voltage VDSS ID 200 V Continuous Drain Current (@TC 10* A Continuous Drain Current (@TC =100oC) 6.3* A IDM Drain current pulsed Gate to Source Voltage EAS Single pulsed Avalanche Energy EAR Repetitive Avalanche Energy (note 1) Peak diode Recovery dv/dt Total power dissipation (@TC PD Derating Factor above TSTG, TJ 40 A ±30 V (note 2) 600 mJ (note 1) 120 mJ (note 3) 5 V/ns =25oC) 25oC 132 148 W 1.06 1.18 W/oC Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC 300 oC Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. TL Unit =25oC) VGS dv/dt TO-252 *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value TO-220 TO-252 Unit Rthjc Thermal resistance, Junction to case 0.95 0.85 oC/W Rthcs Thermal resistance, Case to Sink 0.5 - oC/W Rthja Thermal resistance, Junction to ambient 57.5 - oC/W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0 1/5 SAMWIN SW630A Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current IGSS 200 V V/oC 0.21 VDS=200V, VGS=0V 1 uA VDS=160V, TC=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.0 V 0.4 Ω On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 5A Forward Transconductance VDS = 20 V, ID = 5 A Gfs 2.0 0.29 5 S Dynamic characteristics 420 Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 40 td(on) Turn on delay time 7 15 38 50 48 70 32 60 22 40 tr td(off) tf Qg Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz 100 VDS=100V, ID=10A, RG=25Ω (note 4,5) Fall time Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS=160V, VGS=10V, ID=10A (note 4,5) pF ns nC 3 13 Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=10A, VGS=0V Trr Reverse recovery time Qrr Reverse recovery Charge IS=10A, VGS=0V, dIF/dt=100A/us Min. Typ. Max. Unit 10 A 40 A 1.5 V 145 ns 0.75 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 12mH, IAS = 10A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 10A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0 2/5 SAMWIN Fig. 1. On-state characteristics SW630A Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 3. Gate charge characteristics Fig. 4. On state current vs. diode forward voltage Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0 3/5 SAMWIN SW630A Fig. 7. Maximum safe operating area (TO-220) Fig. 9. Transient thermal response curve(TO-220) Fig. 8. Maximum safe operating area (TO-252) Fig. 10. Transient thermal response curve(TO-252) Fig. 11. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS QGS QGD DUT VGS 2mA Charge Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. nC July. 2013. Rev. 3.0 4/5 SAMWIN SW630A Fig. 12. Switching time test circuit & waveform VDS RL RGS 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 13. Unclamped Inductive switching test circuit & waveform Fig. 14. Peak diode recovery dv/dt test circuit & waveform DUT + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0 5/5