SW630A

SAMWIN
SW630A
N-channel TO-220/D-PAK MOSFET
Features
TO-220
■ High ruggedness
■ RDS(ON) (Max 0.4 Ω)@VGS=10V
■ Gate Charge (Typ 22nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-252
BVDSS : 200V
ID
1
1
2
: 10A
RDS(ON) : 0.4ohm
2
3
3
2
1. Gate 2. Drain 3. Source
General Description
1
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at high efficient DC to DC converter block and SMPS.
It’s typical application is TV and monitor.
3
Order Codes
Item
1
2
Sales Type
SW P 630A
SW D 630A
Marking
SW630
SW630
Package
TO-220
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Value
Parameter
TO-220
Drain to Source Voltage
VDSS
ID
200
V
Continuous Drain Current (@TC
10*
A
Continuous Drain Current (@TC
=100oC)
6.3*
A
IDM
Drain current pulsed
Gate to Source Voltage
EAS
Single pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
Total power dissipation (@TC
PD
Derating Factor above
TSTG, TJ
40
A
±30
V
(note 2)
600
mJ
(note 1)
120
mJ
(note 3)
5
V/ns
=25oC)
25oC
132
148
W
1.06
1.18
W/oC
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
oC
300
oC
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
TL
Unit
=25oC)
VGS
dv/dt
TO-252
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
TO-220
TO-252
Unit
Rthjc
Thermal resistance, Junction to case
0.95
0.85
oC/W
Rthcs
Thermal resistance, Case to Sink
0.5
-
oC/W
Rthja
Thermal resistance, Junction to ambient
57.5
-
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
1/5
SAMWIN
SW630A
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
IGSS
200
V
V/oC
0.21
VDS=200V, VGS=0V
1
uA
VDS=160V, TC=125oC
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
4.0
V
0.4
Ω
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 5A
Forward Transconductance
VDS = 20 V, ID = 5 A
Gfs
2.0
0.29
5
S
Dynamic characteristics
420
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
40
td(on)
Turn on delay time
7
15
38
50
48
70
32
60
22
40
tr
td(off)
tf
Qg
Rising time
Turn off delay time
VGS=0V, VDS=25V, f=1MHz
100
VDS=100V, ID=10A, RG=25Ω
(note 4,5)
Fall time
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=160V, VGS=10V, ID=10A
(note 4,5)
pF
ns
nC
3
13
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD
Diode forward voltage drop.
IS=10A, VGS=0V
Trr
Reverse recovery time
Qrr
Reverse recovery Charge
IS=10A, VGS=0V,
dIF/dt=100A/us
Min.
Typ.
Max.
Unit
10
A
40
A
1.5
V
145
ns
0.75
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 12mH, IAS = 10A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 10A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
2/5
SAMWIN
Fig. 1. On-state characteristics
SW630A
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
3/5
SAMWIN
SW630A
Fig. 7. Maximum safe operating area (TO-220)
Fig. 9. Transient thermal response curve(TO-220)
Fig. 8. Maximum safe operating area (TO-252)
Fig. 10. Transient thermal response curve(TO-252)
Fig. 11. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGS
QGD
DUT
VGS
2mA
Charge
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
nC
July. 2013. Rev. 3.0
4/5
SAMWIN
SW630A
Fig. 12. Switching time test circuit & waveform
VDS
RL
RGS
90%
VDS
VDD
VIN
10VIN
DUT
10%
10%
td(on)
td(off)
tr
tON
tf
tOFF
Fig. 13. Unclamped Inductive switching test circuit & waveform
Fig. 14. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VDD
VF
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
5/5