SW2N60B

SW2N60B
N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-126 MOSFET
TO-220F
Features






TO-251
BVDSS : 600V
TO-126
TO-252
: 2A
ID
High ruggedness
Low RDS(ON) (Typ3.8 Ω)@VGS=10V
Low Gate Charge (Typ7.5 nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Charge,Adaptor,LED
RDS(ON) : 3.8Ω
2
1
2
1
3
2
1
3
2
1
3
2
3
1
1. Gate 2. Drain 3. Source
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
2
3
4
Sales Type
SW F 2N60B
SW I 2N60B
SW D 2N60B
SW L 2N60B
Marking
SW 2N60B
SW 2N60B
SW 2N60B
SW 2N60B
Package
TO-220F
TO-251
TO-252
TO-126
Packaging
TUBE
TUBE
REEL
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
Value
Parameter
TO-220F TO-251 TO-252 TO-126
Drain to source voltage
Unit
600
V
Continuous drain current (@TC
=25oC)
2.0*
A
Continuous drain current (@TC
=100oC)
1.6*
A
8.0
A
±30
V
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
151
145
145
160
mJ
EAR
Repetitive avalanche energy
(note 1)
20
18
18
41
mJ
dv/dt
PD
TSTG, TJ
TL
(note 1)
Peak diode recovery dv/dt
Total power dissipation (@TC
Derating factor above
(note 3)
=25oC)
25oC
4.5
V/ns
18.5
69
69
10
W
0.15
0.55
0.55
0.08
W/oC
Operating junction temperature & storage temperature
-55 ~ + 150
oC
300
oC
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
TO-220F TO-251 TO-252 TO-126
Unit
Rthjc
Thermal resistance, Junction to case
6.8
1.8
1.8
12.9
oC/W
Rthja
Thermal resistance, Junction to ambient
60
91
91
65
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
1/7
SW2N60B
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
BVDSS
600
V
V/oC
0.79
VDS=600V, VGS=0V
1
uA
VDS=480V, TC=125oC
10
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
4.0
V
4.5
Ω
IGSS
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 1A
3.8
Forward transconductance
VDS = 40 V, ID = 1A
1.5
Gfs
2.0
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
10
td(on)
Turn on delay time
6.5
tr
td(off)
tf
Qg
Rising time
Turn off delay time
284
VGS=0V, VDS=25V, f=1MHz
47
VDS=300V, ID=2.0A, VGS=10V,
RG=25Ω
(note 4,5)
pF
20
ns
14.5
Fall time
22.3
7.5
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=480V, VGS=10V, ID=2.0A
(note 4,5)
nC
1
5.5
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD
Diode forward voltage drop.
IS=2.0A, VGS=0V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=2.0A, VGS=0V,
dIF/dt=100A/us
Min.
Typ.
Max.
Unit
2
A
8
A
1.4
V
342
ns
1
uC
Oct. 2015. Rev. 4.0
2/7
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 75.5mH, IAS = 2A. VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 2.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
SW2N60B
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 1. On-state characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig. 3. Gate charge characteristics
Fig. 6. On resistance variation
vs. junction temperature
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
BVDSS, (Normalized
Drain-Source Breakdown Voltage
1.2
2.5
2
RDSON, (Normalized
Drain-Source ON resistance
1.1
1
0.9
1.5
1
0.5
0.8
0
-70
-45
-20
5
30
55
80
105
130
155
180
-70
-45
-20
TJ Junction Temperature （℃）
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
5
30
55
80
105
130
155
180
TJ Junction Temperature （℃）
Oct. 2015. Rev. 4.0
3/7
SW2N60B
Fig. 7. Maximum safe operating area(TO-220F)
Fig. 8. Transient thermal response curve
Fig. 16. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGS
QGD
DUT
VGS
0.6mA
Charge(nC)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
4/7
SW2N60B
Fig. 17. Switching time test circuit & waveform
VDS
RL
90%
VDS
VDD
VIN
RGS
10VIN
DUT
10%
10%
td(on)
td(off)
tr
tON
tf
tOFF
Fig. 18. Unclamped Inductive switching test circuit & waveform
Fig. 19. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VF
VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
5/7
SW2N60B
DISCLAIMER
* All the data&curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
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