Datasheet

AOD454
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD454 uses advanced trench technology and
design to provide excellent R DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VDS (V) = 40V
ID = 12 A (VGS = 10V)
RDS(ON) < 33 mΩ (VGS = 10V)
RDS(ON) < 47 mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Top View
D
Bottom View
D
G
S
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
C
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
Power Dissipation
A
C
TA=25°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
V
A
10
IDM
30
IAR
12
A
EAR
20
mJ
50
2
W
1.3
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
25
PDSM
TA=70°C
Maximum Junction-to-Case B
±20
ID
PD
TC=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
12
TC=100°C
Pulsed Drain Current
Avalanche Current
Maximum
40
RθJA
RθJC
Typ
17.4
50
2.3
°C
Max
30
60
3
Units
°C/W
°C/W
°C/W
www.aosmd.com
AOD454
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=10mA, VGS=0V
Typ
V
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.8
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
TJ=55°C
VGS=10V, ID=12A
±100
nA
2.3
3
V
25
33
39
52
47
mΩ
1
V
12
A
404
500
pF
95
150
pF
37
60
pF
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
34
gFS
Forward Transconductance
VDS=5V, ID=12A
25
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=20V, f=1MHz
µA
5
RDS(ON)
Output Capacitance
Units
40
VDS=32V, VGS=0V
IDSS
Coss
Max
mΩ
S
2.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.2
nC
Qg(4.5V) Total Gate Charge
4.5
nC
1.6
nC
2.6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=12A
VGS=10V, VDS=20V, RL=1.7Ω,
RGEN=3Ω
3.5
ns
6
ns
13.2
ns
3.5
ns
ns
nC
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=12A, dI/dt=100A/µs
22.9
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
18.3
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev 5: Sep. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
5V
10V
VDS=5V
25
4.5V
15
20
ID(A)
ID (A)
4V
15
10
125°C
10
5
VGS=3.5V
5
25°C
0
0
0
1
2
3
4
2
5
2.5
50
3.5
4
Normalized On-Resistance
40
4.5
500
150
60
1.8
45
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=4.5V
35
30
VGS=10V
25
VGS=10V
ID=12A
1.6
1.4
VGS=4.5V
ID=6A
1.2
1
20
0
4
8
12
16
20
0.8
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
1.0E+01
ID=12A
90
1.0E+00
125°C
80
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ )
70
60
1.0E-02
50
25°C
1.0E-03
40
30
1.0E-04
25°C
20
1.0E-05
10
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
www.aosmd.com
AOD454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
700
10
Capacitance (pF)
VGS (Volts)
600
VDS=20V
ID=12A
8
6
4
Ciss
500
400
300
Coss
200
Crss
2
100
0
0
2
4
6
8
0
10
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10µs
15
20
25
30
35
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=175°C
TC=25°C
160
ID (Amps)
1ms
10ms
1.0
40
500
150
60
100µs
Power (W)
10.0
10
200
TJ(Max)=175°C, TC=25°C
RDS(ON)
limited
5
120
80
DC
40
0
0.0001
0.1
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
L⋅ ID
tA =
BV − VDD
12
10
Power Dissipation (W)
ID(A), Peak Avalanche Current
14
8
6
4
TA=25°C
2
0
0.00001
20
15
10
5
0
0.0001
0.001
0
25
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
50
75
100
14
150
175
500
150
60
50
TA=25°C
12
40
10
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note B)
8
6
30
20
4
10
2
0
0.001
0
0
25
50
75
100
125
150
175
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note B)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD454
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com