Datasheet

AOD446
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD446 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VDS (V) = 75V
ID = 10 A (VGS = 20V)
RDS(ON) < 130 mΩ (VGS = 20V)
RDS(ON) < 140 mΩ (VGS = 10V)
RDS(ON) < 165 mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% Rg Tested!
TO252
DPAK
TopView
D
Bottom View
D
G
D
S
D
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
C
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
Power Dissipation
A
C
TA=25°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
V
10
IDM
20
IAR
10
A
EAR
5
mJ
W
10
2.1
W
1.3
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
A
20
PDSM
TA=70°C
Maximum Junction-to-Case B
±25
ID
PD
TC=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
10
TC=100°C
Pulsed Drain Current
Avalanche Current
Maximum
75
RθJA
RθJC
Typ
17.4
50
4
°C
Max
30
60
7.5
Units
°C/W
°C/W
°C/W
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AOD446
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=10mA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
TJ=55°C
VGS=20V, ID=5A
A
105
140
mΩ
VGS=4.5V, ID=2A
120
165
mΩ
1
V
10
A
350
pF
IS=1A, VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
V
VGS=10V, ID=5A
Diode Forward Voltage
Rg
nA
3
130
Forward Transconductance
Reverse Transfer Capacitance
100
220
VSD
Output Capacitance
2.4
µA
100
gFS
Coss
5
180
TJ=125°C
VDS=5V, ID=10A
Crss
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
75
VDS=60V, VGS=0V
IDSS
RDS(ON)
Typ
9
0.79
293
VGS=0V, VDS=30V, f=1MHz
S
51
pF
20
VGS=0V, VDS=0V, f=1MHz
2.2
mΩ
pF
3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.2
6.5
nC
Qg(4.5V) Total Gate Charge
2.46
3.5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=37.5V, ID=5A
1
nC
1.34
nC
4.6
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=5A, dI/dt=100A/µs
25
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
27
VGS=10V, VDS=37.5V, RL=7.5Ω,
RGEN=3Ω
2.3
ns
14.7
ns
1.7
ns
30
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev3: Sep 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AOD446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10
10V
25
7V
5V
6
125°C
ID(A)
ID (A)
20
VDS=5V
8
6V
15
4.5V
4
VGS=4V
10
25°C
2
3.5V
5
0
0
0
1
2
3
4
2
5
3
3.5
4
4.5
5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
220
2.2
180
Normalized On-Resistance
200
RDS(ON) (mΩ)
2.5
VGS=4.5V
160
140
VGS=10V
120
VGS=20V
100
VGS=20V, 5A
2
VGS=10V, 5A
1.8
1.6
VGS=4.5V, 2A
1.4
1.2
1
0.8
80
0
2
0
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
260
1.0E+01
ID=5A
240
1.0E+00
125°
1.0E-01
200
IS (A)
RDS(ON) (mΩ)
220
180
160
125°
1.0E-02
25°
1.0E-03
25°
140
1.0E-04
120
1.0E-05
100
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
Ciss
300
Capacitance (pF)
VGS (Volts)
350
VDS=37.5V
ID=5A
8
6
4
250
200
150
Coss
100
2
50
Crss
0
0
0
2
4
0
6
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
30
200
100.0
TJ(Max)=175°C,
10µs
ID (Amps)
100µs
1ms
Power (W)
RDS(ON)
limited
10.0
160
10ms
1.0
TJ(Max)=175°C
TC=25°C
120
80
DC
40
0.1
0.1
1
10
100
0
0.0001
VDS (Volts)
ZθJC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7.5°C/W
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
tA =
10
L⋅ ID
BV − VDD
Power Dissipation (W)
ID(A), Peak Avalanche Current
12
8
6
4
TA=25°C
2
20
15
10
5
0
0
0.00001
0.0001
0
0.001
50
10
40
8
Power (W)
Current rating ID(A)
12
6
50
75
100
125
150
175
TA=25°C
30
20
4
10
2
0
0
25
50
75
100
125
150
0
0.001
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
ZθJA Normalized Transient
Thermal Resistance
25
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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AOD446
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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