Datasheet

AOD456
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD456 uses advanced trench technology and
design to provide excellent R DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VDS (V) = 25V
ID = 50A (VGS = 10V)
RDS(ON) <6 mΩ (VGS = 10V)
RDS(ON) <10 mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
193
18
100% Rg Tested!
TO-252
D-PAK
Top View
D
Bottom View
D
G
G
S
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Avalanche Current
C
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
Power Dissipation
A
C
TA=25°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
V
40
IDM
150
A
IAR
30
A
EAR
45
mJ
50
3
W
2.1
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
25
PDSM
TA=70°C
Maximum Junction-to-Case B
±20
ID
PD
TC=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
50
TC=100°C
Pulsed Drain Current
Maximum
25
RθJA
RθJC
Typ
15
41
2.1
°C
Max
20
50
3
Units
°C/W
°C/W
°C/W
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AOD456
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
Static Drain-Source On-Resistance
Typ
V
TJ=55°C
1
100
nA
1.74
3
V
5
6
100
VGS=10V, ID=30A
TJ=125°C
A
7.3
8
Forward Transconductance
VDS=5V, ID=20A
45
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.74
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
gFS
Output Capacitance
Units
1
VGS=4.5V, ID=20A
Coss
Max
25
VDS=20V, VGS=0V
IDSS
RDS(ON)
Min
Conditions
1850
VGS=0V, VDS=12.5V, f=1MHz
mΩ
10
S
1
V
50
A
2220
pF
472
pF
275
pF
0.86
1.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
31.7
38
nC
Qg(4.5V) Total Gate Charge
15.7
19
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=12.5V, ID=20A
VGS=10V, VDS=12.5V,
RL=0.625Ω, RGEN=3Ω
5.8
nC
8.2
nC
7.5
ns
14
ns
30
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
30.9
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
20.3
11.5
ns
37
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: Spe 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
10V
6V
80
50
5V
VDS=5V
40
60
4.0V
ID(A)
ID (A)
4.5V
40
30
125°C
20
VGS=3.5
20
25°C
494
692
10
0
593
830
0
0
1
2
3
4
5
1
2
3
10
5
193
18
Normalized On-Resistance
1.8
8
VGS=4.5V
6
VGS=10V
4
4
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
RDS(ON) (mΩ )
4.63
1.6
VGS=10V, 20A
1.4
1.2
VGS=4.5V, 20A
1
2
0
10
20
30
40
50
0.8
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
59
100
142
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
12
10
ID=20A
125°C
10
1
IS (A)
RDS(ON) (mΩ )
25
8
0.1
0.01
125°C
25°C
0.001
6
0.0001
25°C
0.00001
4
0.0
3
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=12.5V
ID=20A
2500
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
2000
1500
4.63
Coss
1000
494
692
500
593
830
Crss
0
0
0
5
10
15
20
25
30
35
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
0
100µs
DC
Power (W)
ID (Amps)
160
10µs
RDS(ON)
limited
1ms
1
TJ(Max)=175°C
TC=25°C
120
80
40
0
0.1
0.1
1
10
100
VDS (Volts)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
0.0001
0.001
0.01
59 0.1
142
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
Zθ JC Normalized Transient
Thermal Resistance
25
200
TJ(Max)=175°C, TC=25°C
10
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
193
18
1000
100
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
tA =
50
L⋅ ID
BV − VDD
Power Dissipation (W)
ID(A), Peak Avalanche Current
60
40
30
20
TA=25°C
10
0.000001
50
40
30
4.63
20
494
692
10
0
0.00001
0.0001
0.001
0
25
50
75
100
125
150
T
CASE (°C)
Figure 13: Power De-rating (Note B)
175
193
18
60
50
50
40
40
Power (W)
Current rating ID(A)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
30
TA=25°C
30
20
20
10
10
0
0
0
25
50
75
100
125
150
0.01
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
Zθ JA Normalized Transient
Thermal Resistance
593
830
0.1
1
59
142 10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
Single Pulse
0.0001
0.001
0.01
0.1
PD
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOD456
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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