SW740U

SAMWIN
SW740U
N-channel TO-220 MOSFET
Features
TO-220
BVDSS : 400V
: 10A
ID
■ High ruggedness
■ RDS(ON) (Max 0.55Ω)@VGS=10V
■ Gate Charge (Typical 38nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
RDS(ON) : 0.55ohm
1
2
2
3
1. Gate 2. Drain 3. Source
1
General Description
3
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching
mode power appliances.
Order Codes
Item
1
Sales Type
SW P 740U
Marking
SW740
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
Drain to Source Voltage
VDSS
ID
Continuous Drain Current (@TC
=25oC)
Continuous Drain Current (@TC
=100oC)
Value
Unit
400
V
10*
A
6.3*
A
40
A
±30
V
IDM
Drain current pulsed
VGS
Gate to Source Voltage
EAS
Single pulsed Avalanche Energy
(note 2)
1200
mJ
EAR
Repetitive Avalanche Energy
(note 1)
170
mJ
(note 3)
5
V/ns
226
W
1.8
W/oC
-55 ~ + 150
oC
300
oC
dv/dt
(note 1)
Peak diode Recovery dv/dt
Total power dissipation (@TC
PD
Derating Factor above
TSTG, TJ
=25oC)
25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
TL
Thermal characteristics
Symbol
Value
Unit
Rthjc
Thermal resistance, Junction to case
Parameter
0.55
oC/W
Rthcs
Thermal resistance, Case to Sink
0.5
oC/W
Rthja
Thermal resistance, Junction to ambient
58
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
1/5
SAMWIN
SW740U
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
IGSS
400
V
V/oC
0.43
VDS=400V, VGS=0V
1
uA
VDS=320V, TC=125oC
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
4.0
V
0.55
Ω
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 5A
Forward Transconductance
VDS=20V, ID =5 A
Gfs
2.0
0.35
10
S
Dynamic characteristics
1150
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
40
td(on)
Turn on delay time
15
30
35
60
98
200
38
80
38
70
tr
td(off)
tf
Qg
Rising time
Turn off delay time
VGS=0V, VDS=25V, f=1MHz
170
VDS=200V, ID=10A, RG=25Ω
(note 4,5)
Fall time
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=320V, VGS=10V, ID=10A
(note 4,5)
pF
ns
nC
6
18
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD
Diode forward voltage drop.
IS=10A, VGS=0V
Trr
Reverse recovery time
Qrr
Reverse recovery Charge
IS=10A, VGS=0V,
dIF/dt=100A/us
Min.
Typ.
Max.
Unit
10
A
40
A
1.5
V
270
ns
2.53
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 25.4mH, IAS = 10A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 10A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
2/5
SAMWIN
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
SW740U
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs. diode
forward voltage
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
3/5
SAMWIN
SW740U
Fig. 7. Maximum safe operating area
Fig. 8. Transient thermal response curve
Fig. 9. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGD
QGS
DUT
VGS
2mA
Charge
nC
Fig. 10. Switching time test circuit & waveform
VDS
RL
RGS
VDS
VDD
VIN
10VIN
90%
DUT
10%
10%
td(on)
tr
tON
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
td(off)
tf
tOFF
July. 2013. Rev. 3.0
4/5
SAMWIN
SW740U
Fig. 11. Unclamped Inductive switching test circuit & waveform
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VDD
VF
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
5/5