2672

NTE2672
Silicon NPN Transistor
High Gain, Low Frequency, General Purpose Amp
TO92 Type Package
Features:
D High DC Current Gain: hFE = 800 to 3200
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 0.5V Max
D High Collector−Base Voltage: VEBO ≥ 15V
Applications:
D Low Frequency, General Purpose Amp
D Various Drivers
D Muting Circuit
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter−Base Voltge, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cut−Off Current
ICBO
VCB = 40V, IE = 0
−
−
0.1
μA
Emitter Cut−Off Current
IEBO
VEB = 10V, IC = 0
−
−
0.1
μA
DC Current Gain
hFE
VCE = 5V, IC = 10mA
800
1500
3200
VCE = 5V, IC = 100mA
600
−
−
fT
VCE = 10V, IC = 10mA
−
250
−
MHz
Common Base Output Capacitance
cob
VCB = 10V, f = 1MHz
−
4.0
−
pF
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 100mA, IB = 2mA
−
0.12
0.5
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 100mA, IB = 2mA
−
0.85
1.2
V
Gain−Bandwidth Product
Collector−Base Breakdown Voltage
V(BR)CBO IC = 10μA, IC = 0
60
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
50
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10μA, IC = 0
15
−
−
V
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E C B
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max