NTE2366 Silicon PNP Transistor High Voltage Video Amp (Compl to NTE399) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 200V, IE = 0 – – 0.1 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 0.1 µA Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 300 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 300 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V VCE = 10V, IC = 10mA 40 – 320 DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) IC = 20mA, IB = 2mA – – 0.6 V Base–Emitter Saturation Voltage VBE(sat) IC = 20mA, IB = 2mA – – 1.0 V Current Gain–Bandwidth Product fT VCE = 30V, IC = 10mA – 150 – MHz Capacitance Cob VCB = 30V, f = 1MHz – 2.6 – pF Reverse Transfer Capacitance Cre VCB = 30V, f = 1MHz – 1.8 – pF .339 (8.62) Max Seating Plane .026 (.66) Dia Max .512 (13.0) Min E C B .100 (2.54) .200 (5.08) Max .240 (6.09) Max