NTE2591 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage, High Reliability D Low Output Capacitance D Wide ASO Range Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 900V, IE = 0 − − 1.0 μA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 − − 1.0 μA DC Current Gain hFE VCE = 5V, IC =1mA 20 50 120 fT VCE = 10V, IC = 1mA − 6 − MHz Cob VCB = 100V, f = 1MHz − 1.6 − pF Collector Emitter Saturation Voltage VCE(sat) IC = 2mA, IB = 400μA − − 5 V Base Emitter Saturation Voltage VBE(sat) IC =2mA, IB = 400μA − − 2 V Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 2000 − − V Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 900 − − V Emitter Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 5 − − V Gain−Bandwidth Product Output Capacitance .402 (10.2) .035 (0.9) .177 (4.5) .051 (1.3) .346 (8.8) B C E .433 (11.0) .019 (0.5) .100 (2.54)