2591

NTE2591
Silicon NPN Transistor
High Voltage Amp/Switch
Features:
D High Breakdown Voltage, High Reliability
D Low Output Capacitance
D Wide ASO Range
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 900V, IE = 0
−
−
1.0
μA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
−
−
1.0
μA
DC Current Gain
hFE
VCE = 5V, IC =1mA
20
50
120
fT
VCE = 10V, IC = 1mA
−
6
−
MHz
Cob
VCB = 100V, f = 1MHz
−
1.6
−
pF
Collector Emitter Saturation Voltage
VCE(sat)
IC = 2mA, IB = 400μA
−
−
5
V
Base Emitter Saturation Voltage
VBE(sat)
IC =2mA, IB = 400μA
−
−
2
V
Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
2000
−
−
V
Collector Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
900
−
−
V
Emitter Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
5
−
−
V
Gain−Bandwidth Product
Output Capacitance
.402 (10.2)
.035
(0.9)
.177 (4.5)
.051 (1.3)
.346
(8.8)
B
C
E
.433
(11.0)
.019 (0.5)
.100 (2.54)