NTE2673 (NPN) & NTE2674 (PNP) Silicon Complementary Transistors General Purpose Power TO220FP Type Package Features: D Low Collector−Emitter Saturation Voltage: VCD(sat) = 0.5V Typ (IC/IB = 2A/0.2A) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A Collector Power Dissipation (TC = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Note 1. Single pulse: Pulse Width = 10ms. Note 2. Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Base Breakdown Voltage V(BR)CBO IC = 50μA 60 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA 50 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 50μA 5 − − V Collector Cutoff Current ICBO VCE = 40V − − 1 μA Emitter Cutoff Current IEBO VEB = 4V − − 1 μA IC = 2A, IB = 200mA, Note 3 − 0.5 1.0 V IC = 500mA, VCE = 3V, Note 3 60 − 320 IE = -500mA, VCE = 5V, f = 30MHz, Note 3 − 90 − MHz VCB = 10V, IE = 0A, ftest = 1MHz − 40 − pF Collector−Emitter Saturation Voltage DC Current Transfer Ratio VCE(sat) hFE Transition Frequency fT Output Capacitance Cob Note 3. Measured using pulse current. .071 (1.8) .394 (10.0) .177 (4.5) .276 (7.0) .110 (2.8) .669 (17.0) .472 (12.0) B C E .532 (13.5) Min .100 (2.54) .102 (2.6)