451

NTE451
Silicon N−Channel JFET Transistor
VHF/UHF Amplifier
TO92 Type Package
Absolute Maximum Ratings:
Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Reverse Gate−Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1505C
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−25
−
−
V
VGS = −20V, VDS = 0
−
−
−1.0
nA
VGS = −20V, VDS = 0, TA = +1005C
−
−
−0.2
nA
−0.5
−
−4.0
V
4
−
20
mA
3500
−
7000
mho
VDS = 15V, VGS = 0, f = 400MHz
−
−
1000
mho
VDS = 15V, VGS = 0, f = 1kHz
−
−
60
mho
Re(yos)
VDS = 15V, VGS = 0, f = 400MHz
−
−
100
mho
Forward Transconductance
gfs
VDS = 15V, VGS = 0, f = 400MHz
3000
−
−
mho
Input Capacitance
Ciss
VDS = 15V, VGS = 0, f = 1MHz
−
−
5
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0, f = 1MHz
−
−
1
pF
Output Capacitance
Coss
VDS = 15V, VGS = 0, f = 1MHz
−
−
2
pF
OFF Characteristics
Gate−Source Breakdown Voltage
Gate Reverse Current
Gate−Source Cutoff Voltage
V(BR)GSS IG = −1 A, VDS = 0
IGSS
VGS(off)
ID = 10nA, VDS = 15V
ON Characteristics
Zero−Gate−Voltage Drain Current
IDSS
VDS = 15V, VGS = 0
Small Signal Characteristics Characteristics
Forward Transfer Admittance
Input Admittance
Output Admittance
Output Conductance
|yfs|
Re(yis)
|yos|
VDS = 15V, VGS = 0, f = 1kHz
Rev. 10−13
Electrical Characteristics Cont’d): (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Functional Characteristics
Noise Figure
NF
Common Source Power Gain
Gps
VDS = 15V, ID = 4mA,
RG 1k5
f = 100MHz
−
−
2
dB
f = 400MHz
−
−
4
dB
VDS = 15V, ID = 4mA
f = 100MHz
18
−
30
dB
f = 400MHz
10
−
20
dB
.135 (3.45) Min
D
G
S
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
D S G
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max