NTE3017 Infrared Emitting Diode High Speed for Remote Control Description: The NTE3017 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue−grey tinted plastic T−1 3/4 (5mm) package. Features: D Low Forward Voltage D High Radiant Power and Radiant Intensity D Suitable for DC and High Pulse Current Operation D High Reliability D Standard T−1 3/4 (5mm) Package Applications: Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation and angle requirements in combination with PIN photodiodes or phototransistors. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Peak (tp = 100μs, tp/T = 0.5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Surge Forward Current (tp = 100μs), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210mW Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +100°C Lead Soldering Temperature (t ≤ 5sec, 2mm from case), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375K/W Rev. 10−10 Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Forward Voltage VF Temperature Coefficient of Forward Voltage Test Conditions Min Typ Max Unit IF = 100mA, tp = 20ms − 1.3 1.7 V IF = 1.5A, tp = 100μs − 2.2 2.7 V IF = 100mA − −1.3 − mV/°C Reverse Current IR VR = 5V − − 100 μA Junction Capacitance Cj VR = 0, f = 1MHz, E = 0 − 30 − pF Radient Intensity Ie IF = 100mA, tp = 20ms 15 20 − mW/sr IF = 1.5A, tp = 100μs 120 190 − mW/sr − ±22 − deg IF = 100mA, tp = 20ms − 15 − mW IF = 20mA − −0.8 − %/°C IF = 100mA − 950 − nm IF = 100mA − 0.2 − nm/°C Δλ IF = 100mA − 50 − nm tr IF = 100mA − 800 − ns IF = 1.5A − 400 − ns IF = 100mA − 800 − ns IF = 1.5A − 400 − ns Angle of Half Intensity ϕ Radient Power Φe Temperature Coefficient of Radient Intensity Peak Wavelength λp Temperature Coefficient of Peak Wavelength Spectral Bandwidth Rise Time Fall Time tf .230 (5.84) Dia Flat Denotes Cathode .100 (2.54) .200 (5.08) Dia .340 (8.63) .040 (1.01) .100 (2.54) R Seating Plane .100 (2.54) .750 (19.05) Min .050 (1.27) Typ .025 (0.63) Max Sq .050 (1.27) .100 (2.54) Tolerance ±.010 (.254)