SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested High Peak Current Capability dV/dt Ruggedness Improved trr/Qrr Improved Gate Charge High Power Dissipations Capability Compliant to RoHS Directive 2002/95/EC Super-247 G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Super-247 SiHS20N50C-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C)e VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta UNIT V 20 ID A 11 IDM 80 1.8 W/°C Single Pulse Avalanche Energyb EAS 361 mJ Maximum Power Dissipation PD 250 W dV/dt 5 V/ns TJ, Tstg - 55 to + 150 Linear Derating Factor Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) °C 300d for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 , IAS = 17 A. c. ISD 18 A, dI/dt 380 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. Limited by maximum junction temperature. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. Maximum Junction-to-Ambient RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 0.5 Document Number: 91424 S11-0112-Rev. B, 31-Jan-11 MAX. UNIT °C/W www.vishay.com 1 SiHS20N50C Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 500 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 700 - mV/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS VGS = ± 30 V - - ± 100 VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 μA - 0.225 0.270 gfs VDS = 50 V, ID = 10 A - 6.4 - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz - 2451 2942 - 300 360 RDS(on) VGS = 10 V ID = 10 A Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 10 V 26 32 65 76 Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) - 80 - tr VDD = 250 V, ID = 18 A, Rg = 9.1 - 27 - - 32 - - 44 - f = 1 MHz, open drain - 1.1 - - - 20 - - 80 - - 1.5 - 503 - ns - 6.7 - μC - 30 - A Rise Time Turn-Off Delay Time td(off) Fall Time tf Gate Input Resistance Rg ID = 18 A, VDS = 400 V - 21 - - 29 - pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Current MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 18 A, VGS = 0 V TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, V = 35 V IRRM V The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. www.vishay.com 2 Document Number: 91424 S11-0112-Rev. B, 31-Jan-11 SiHS20N50C Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) ID, Drain Current (A) 60 50 40 30 100 VGS Top 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V Bottom 5.0 V TJ = 25 °C TJ = 150 °C ID, Drain Current (A) 70 20 TJ = 25 °C 1 0.1 7.0 V 10 0 0.01 0 6 12 18 24 30 5 6 7 8 9 Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) 40 ID, Drain Current (A) 10 VGS Top 15 V 14 V 13 V 12 V 30 11 V 10 V 9.0 V 8.0 V 7.0 V 20 6.0 V Bottom 5.0 V TJ = 150 °C 7.0 V 10 0 0 6 12 18 24 30 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91424 S11-0112-Rev. B, 31-Jan-11 10 3 2.5 ID = 17 A 2 1.5 VGS = 10 V 1 0.5 0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 SiHS20N50C Vishay Siliconix 1000 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 104 Operation in this area limited by RDS(on) ID, Drain Current (A) Capacitance (pF) 105 Ciss 103 102 Coss Crss 10 1 10 100 100 10 100 µs 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 0.1 100 10 1000 1000 10 000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 8 - Maximum Safe Operating Area 20 20 ID = 17 A VDS = 400 V VDS = 250 V VDS = 100 V 16 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 10 ms 12 8 15 10 5 4 0 0 0 30 60 90 120 QG, Total Gate Charge (nC) 25 50 75 100 125 150 TC, Case Temperature (°C) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature ISD, Reverse Drain Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 VGS = 0 V 0.1 0.2 0.5 0.8 1.1 1.4 VSD, Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage www.vishay.com 4 Document Number: 91424 S11-0112-Rev. B, 31-Jan-11 SiHS20N50C Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-2 10-3 0.1 1 Pulse Time (s) Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case (Super-247) RD VDS VDS tp VGS D.U.T. VDD RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 11a - Switching Time Test Circuit VDS QG 90 % 10 V QGS 10 % VGS QGD VG td(on) td(off) tf tr Charge Fig. 13a - Basic Gate Charge Waveform Fig. 11b - Switching Time Waveforms Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ D.U.T RG 12 V + - IAS 0.2 µF 0.3 µF V DD + D.U.T. - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 12a - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91424 S11-0112-Rev. B, 31-Jan-11 www.vishay.com 5 SiHS20N50C Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91424. www.vishay.com 6 Document Number: 91424 S11-0112-Rev. 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