SiJ482DP Datasheet

New Product
SiJ482DP
Vishay Siliconix
N-Channel 80 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
ID (A)
a, g
Qg (Typ.)
0.0062 at VGS = 10 V
0.0065 at VGS = 7.5 V
80
60
24 nC
0.0095 at VGS = 4.5 V
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
Capable of Operating with 5 V Gate Drive
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
PowerPAK® SO-8L Single
m
5m
6.1
•
•
•
•
D
• DC/DC Primary Side Switch
• Synchronous Rectification
• High Current Switching
5.1
3m
m
G
D
4
G
S
3
S
S
2
S
1
N-Channel MOSFET
Ordering Information:
SiJ482DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
80
± 20
Continuous Source-Drain Diode Current
ID
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
IS
L =0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)d, e
V
60g
60g
21.1b, c
16.9b, c
100
IDM
Pulsed Drain Current (t = 300 µs)
Unit
60g
4.5b, c
30
45
69.4
44.4
A
mJ
5b, c
3.2b, c
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t  10 s
Steady State
Symbol
RthJA
RthJC
Typical
20
1.3
Maximum
25
1.8
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
g. Package limited.
Document Number: 63728
S12-0544-Rev. A, 12-Mar-12
For technical support, please contact: [email protected]
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiJ482DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
80
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
V
36
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.7
V
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = 80 V, VGS = 0 V
1
VDS = 80 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS 5 V, VGS = 10 V
- 5.7
1.5
30
µA
A
VGS = 10 V, ID = 20 A
0.0051
0.0062
VGS = 7.5 V, ID = 15 A
0.0054
0.0065
VGS = 4.5 V, ID = 10 A
0.0068
0.0095
VDS = 10 V, ID = 20 A
68

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
2425
VDS = 40 V, VGS = 0 V, f = 1 MHz
pF
1180
100
VDS = 40 V, VGS = 10 V, ID = 10 A
47
71
Total Gate Charge
Qg
VDS = 40 V, VGS = 7.5 V, ID = 10 A
36.5
55
24
36
Gate-Source Charge
Qgs
VDS = 40 V, VGS = 4.5 V, ID = 10 A
6.6
Gate-Drain Charge
Qgd
Output Charge
Qoss
VDS = 40 V, VGS = 0 V
Rg
f = 1 MHz
Gate Resistance
10.2
0.4
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
2.2
14
28
11
22
36
72
9
18
16
32
13
26
VDD = 40 V, RL = 4 
ID  10 A, VGEN = 7.5 V, Rg = 1 
tf
Fall Time
105
tf
td(off)
Turn-Off Delay Time
VDD = 40 V, RL = 4 
ID  10 A, VGEN = 10 V, Rg = 1 
69
1.1
td(on)
tr
Rise Time
nC
35
70
11
22

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
60
100
IS = 4 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.73
1.1
V
46
90
ns
44
86
nC
21
25
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical support, please contact: [email protected]
Document Number: 63728
S12-0544-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiJ482DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
VGS = 10 V thru 5 V
VGS = 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
20
6
TC = 25 °C
4
2
TC = 125 °C
TC = - 55 °C
VGS = 3 V
0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.009
4000
0.008
3200
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.0
VGS = 4.5 V
0.007
0.006
VGS = 7.5 V
Ciss
2400
1600
VGS = 10 V
0.005
5
Coss
800
Crss
0.004
0
0
20
40
60
80
100
0
16
ID - Drain Current (A)
32
On-Resistance vs. Drain Current and Gate Voltage
64
80
Capacitance
10
2.1
RDS(on) - On-Resistance (Normalized)
ID = 10 A
VGS - Gate-to-Source Voltage (V)
48
VDS - Drain-to-Source Voltage (V)
8
VDS = 40 V
6
VDS = 30 V
VDS = 50 V
4
2
0
0
10
20
30
40
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 63728
S12-0544-Rev. A, 12-Mar-12
50
ID = 20 A
1.8
VGS = 10 V
1.5
VGS = 4.5 V
1.2
0.9
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiJ482DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.05
100
ID = 20 A
0.04
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.03
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.001
0.00
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
200
0.2
160
- 0.1
Power (W)
VGS(th) Variance (V)
2
ID = 5 mA
- 0.4
120
80
ID = 250 μA
- 0.7
- 1.0
- 50
40
- 25
0
25
50
75
100
125
150
0
0.001
0.01
TJ - Temperature (°C)
Threshold Voltage
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
100
ID - Drain Current (A)
IDM Limited
100 μs
1 ms
10 I Limited
D
10 ms
1
Limited by RDS(on)*
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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For technical support, please contact: [email protected]
Document Number: 63728
S12-0544-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiJ482DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
90
ID - Drain Current (A)
72
Package Limited
54
36
18
0
0
25
50
75
100
TC - Case Temperature (°C)
125
150
85
2.5
68
2.0
51
1.5
Power (W)
Power (W)
Current Derating*
34
1.0
0.5
17
0.0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63728
S12-0544-Rev. A, 12-Mar-12
For technical support, please contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiJ482DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA (t)
Single Pulse
0.01
0.0001
t1
t2
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.01
0.0001
0.02
Single Pulse
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data,see www.vishay.com/ppg?63728.
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For technical support, please contact: [email protected]
Document Number: 63728
S12-0544-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline
for Non-Al Parts
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L
L1
L1
A1
e
θ
D1
D
b3
b4
0.25 gauge line
Topside view
Backside view (single)
E2
W2
C
A
W3
W1
F
K
D3
D3
D2
b3
b4
Backside view (dual)
Revision: 16-May-16
Document Number: 69003
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
b4
0.004
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
3.18
3.28
3.38
0.125
0.129
0.133
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117

0°
-
10°
0°
-
10°
ECN: T16-0221-Rev. D, 16-May-16
DWG: 5976
Note
• Millimeters will gover
Revision: 16-May-16
Document Number: 69003
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
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Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 02-Oct-12
1
Document Number: 91000