SiZ904DT Datasheet

New Product
SiZ904DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
30
Channel-2
30
RDS(on) () Max.
ID (A)
0.024 at VGS = 10 V
0.030 at VGS = 4.5 V
0.0135 at VGS = 10 V
0.017 at VGS = 4.5 V
12a
12a
16a
16a
Qg (Typ.)
3.8 nC
7.3 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• POL
• Low Current DC/DC
PowerPAIR® 6 x 5
Pin 1
G1
1
D1
2
D1
D1
5 mm
D1
3
G1
D1
N-Channel 1
MOSFET
4
G2
S1/D2
Pin 9
8
S1/D2
S2
7
6 mm
6
G2
5
N-Channel 2
MOSFET
Ordering Information: SiZ904DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Source Drain Current Diode Current
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Channel-1
30
Channel-2
30
± 20
12a
12a
16a
16a
14.5b, c
11.6b, c
40
9.5b, c
7.6b, c
30
12a
3.2
10
5
20
12.9
16a
4b, c
15
11
33
21
3.8b, c
2.4b, c
4.8b, c
3.1b, c
b, c
TJ, Tstg
Unit
V
A
mJ
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ.
Max.
Channel-2
Typ.
Max.
Unit
t  10 s
RthJA
25
33
20
26
Maximum Junction-to-Ambientb, f
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
4.7
6.2
3
3.8
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for Channel-1 and 61 °C/W for Channel-2.
Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ904DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Ch-1
30
VGS = 0 V, ID = 250 µA
Ch-2
30
ID = 250 µA
Ch-1
ID = 250 µA
Ch-2
33
ID = 250 µA
Ch-1
- 4.5
V
35
mV/°C
ID = 250 µA
Ch-2
VDS = VGS, ID = 250 µA
Ch-1
1
2.5
VDS = VGS, ID = 250 µA
Ch-2
1.2
2.5
-5
Ch-1
± 100
Ch-2
± 100
VDS = 30 V, VGS = 0 V
Ch-1
1
VDS = 30 V, VGS = 0 V
Ch-2
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-1
5
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-2
VDS 5 V, VGS = 10 V
Ch-1
20
VDS 5 V, VGS = 10 V
Ch-2
20
V
nA
µA
5
A
VGS = 10 V, ID = 7.8 A
Ch-1
0.020
VGS = 10 V, ID = 10 A
Ch-2
0.0105 0.0135
VGS = 4.5 V, ID = 7 A
Ch-1
0.024
0.030
0.017
VGS = 4.5 V, ID = 7 A
Ch-2
0.0135
VDS = 10 V, ID = 7.8 A
Ch-1
17
VDS = 10 V, ID = 10 A
Ch-2
24
Ch-1
435
Ch-2
846
0.024

S
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Ciss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Coss
Crss
Qg
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Rg
95
Ch-2
187
Ch-1
42
Ch-2
72
pF
VDS = 15 V, VGS = 10 V, ID = 7.8 A
Ch-1
8
12
VDS = 15 V, VGS = 10 V, ID = 10 A
Ch-2
15.4
23
Ch-1
3.8
6
11
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 7.8 A
Ch-2
7.3
Ch-1
1.4
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Ch-2
2.3
Ch-1
1.1
Qgs
Qgd
Ch-1
Ch-2
f = 1 MHz
nC
2.2
Ch-1
0.6
3.2
6.4
Ch-2
0.2
0.8
1.6

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
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Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ904DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Ch-1
15
30
Ch-2
15
30
Ch-1
12
24
Ch-2
12
24
Ch-1
13
26
Ch-2
13
26
Ch-1
10
20
Ch-2
10
20
Ch-1
5
10
Ch-2
9
18
Ch-1
10
20
Ch-2
9
18
Ch-1
15
30
Ch-2
14
28
Ch-1
10
20
Ch-2
8
16
Unit
Dynamica
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
td(on)
tr
Channel-1
VDD = 15 V, RL = 2.4 
ID  6.3 A, VGEN = 4.5 V, Rg = 1 
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-1
VDD = 15 V, RL = 2.4 
ID  6.3 A, VGEN = 10 V, Rg = 1 
tf
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
IS
TC = 25 °C
td(off)
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
ISM
VSD
Ch-1
12
Ch-2
16
Ch-1
30
Ch-2
40
IS = 6.3 A, VGS = 0 V
Ch-1
0.8
1.2
IS = 3 A, VGS = 0 V
Ch-2
0.78
1.2
Ch-1
15
30
Ch-2
17
34
trr
Body Diode Reverse Recovery Charge
Qrr
Channel-1
IF = 6.3 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
ta
Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
A
Ch-1
7
15
Ch-2
9.5
19
Ch-1
9
Ch-2
10
Ch-1
6
Ch-2
7
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ904DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
10
VGS = 10 V thru 4 V
8
I D - Drain Current (A)
I D - Drain Current (A)
25
20
15
VGS = 3 V
10
4
TC = 25 °C
2
5
TC = 125 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.5
3.0
25
30
600
0.035
500
0.030
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
6
VGS = 4.5 V
0.025
0.020
VGS = 10 V
0.015
Ciss
400
300
200
Coss
100
Crss
0
0.010
0
5
10
15
20
25
0
30
10
15
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
10
R DS(on) - On-Resistance (Normalized)
ID = 7.8 A
VGS - Gate-to-Source Voltage (V)
5
ID - Drain Current (A)
8
6
VDS = 15 V
VDS = 24 V
4
2
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
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4
8
ID = 7.8 A
1.6
VGS = 10 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ904DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.08
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 7.8 A
10
TJ = 25 °C
TJ = 150 °C
0.06
0.04
TJ = 125 °C
0.02
TJ = 25 °C
0
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.9
50
1.8
1.7
40
ID = 250 µA
1.5
Power (W)
VGS(th) (V)
1.6
1.4
1.3
30
20
1.2
10
1.1
1.0
0.9
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
0
0.001
150
0.01
Threshold Voltage
0.1
1
Time (s)
10
100
1000
Single Pulse Power
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
1s
10 s
0.1
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ904DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
25
Power Dissipation (W)
I D - Drain Current (A)
20
15
Package Limited
10
15
10
5
5
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ904DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 68 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
4. Surface Mounted
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ904DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
8
VGS = 10 V thru 5 V
VGS = 4 V
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
VGS = 3 V
6
4
TC = 25 °C
2
10
TC = 125 °C
TC = - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
0
2.5
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
5
Transfer Characteristics
1100
0.025
0.020
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
880
VGS = 4.5 V
0.015
VGS = 10 V
660
440
Coss
0.010
220
Crss
0
0.005
0
10
20
30
40
0
50
5
ID - Drain Current (A)
10
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
ID = 10 A
8
VDS = 10 V
VDS = 20 V
6
VDS = 15 V
4
2
0
0.0
3.2
6.4
9.6
Qg - Total Gate Charge (nC)
Gate Charge
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8
12.8
16.0
R DS(on) - On-Resistance (Normalized)
10
VGS - Gate-to-Source Voltage (V)
30
ID = 10 A
1.6
VGS = 10 V
1.4
1.2
VGS = 4.5 V
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ904DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.06
100
ID = 10 A
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
0.05
TJ = 25 °C
1
0.1
0.01
0.04
0.03
TJ = 125 °C
0.02
0.01
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
2.0
50
1.8
40
1.6
30
1.4
ID = 250 μA
1.2
1.0
- 50
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
9
10
On-Resistance vs. Gate-to-Source Voltage
Power (W)
VGS(th) (V)
Source-Drain Diode Forward Voltage
1
20
10
- 25
0
25
50
75
100
125
0
0.001
150
TJ - Temperature (°C)
0.01
0.1
1
Time (s)
10
Threshold Voltage
Single Pulse Power
100
1000
100
Limited by RDS(on)*
100 μs
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ904DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
50
25
Power Dissipation (W)
ID - Drain Current (A)
40
30
20
Package Limited
10
20
15
10
5
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ904DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 61 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.0001
0.02
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63482.
Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
PowerPAIR® 6 x 5 Case Outline
Pin 7
Pin 6
Pin 5
Pin 5
Pin 6
Pin 7
Pin 8
K
L
Pin 8
b
z
L3
2X
A
D
0.10 C
K1
E
E1
D1
Pin 1
Pin 2
0.10 C
Pin 3
Pin 4
Pin 3
Pin 4
2X
E2
D1
Pin 2
Pin # 1 ident
(optional)
Pin 1
e
Back side view
Top side view
0.10 C
A1
A3
b1
A
C
0.08 C
F
F
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
0.028
0.030
0.032
A1
0.00
-
0.10
0.000
-
0.004
A3
0.15
0.20
0.25
0.006
0.007
0.009
b
0.43
0.51
0.61
0.017
0.020
0.024
b1
0.25 BSC
0.010 BSC
D
4.90
5.00
5.10
0.192
0.196
0.200
D1
3.75
3.80
3.85
0.148
0.150
0.152
E
5.90
6.00
6.10
0.232
0.236
0.240
E1 Option AA (for W/B)
2.62
2.67
2.72
0.103
0.105
0.107
E1 Option AB (for BWL)
2.42
2.47
2.52
0.095
0.097
0.099
E2
0.87
0.92
0.97
0.034
0.036
0.038
e
1.27 BSC
0.050 BSC
0.018 typ.
K Option AA (for W/B)
0.45 typ.
K Option AB (for BWL)
0.65 typ.
0.025 typ.
K1
0.66 typ.
0.025 typ.
L
0.33
0.43
0.53
0.013
0.017
L3
0.23 BSC
0.009 BSC
z
0.34 BSC
0.013 BSC
0.020
ECN: T14-0782-Rev. C, 22-Dec-14
DWG: 6005
Revision: 22-Dec-14
1
Document Number: 63656
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
Recommended Minimum PAD for PowerPAIR® 6 x 5
0.28
(0.011)
0.53
(0.021)
2.835
(0.112)
0.45
(0.018)
2.12
(0.083)
2.67
(0.105)
4
(0.157)
(0, 0)
0.55
(0.022)
0.66
(0.026)
1.21
(0.048)
0.92
(0.036)
4
(0.157)
2.13
(0.084)
0.44
(0.017)
2.835
(0.112)
1.905
(0.075)
Pin 1
0.53
(0.021)
1.27
(0.050)
0.66
(0.026)
0.61
(0.024)
Dimensions in millimeters (inch)
Note
• Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue.
Revision: 16-Feb-15
1
Document Number: 67480
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000