Application Note 3 NJG1108HA8 WiMAX Application 3. WiMAX 2.7~2.9GHZ BAND APPLICATION 3-1 SUMMARY The characteristics of WiMAX 2.7~2.9GHz band application have evaluated as follows. The evaluation circuit structure and measured data are reviewed. 3-2-1 MEASURED DATA1 (DC) General conditions: VDD=VINV=2.85V, Ta=+25°C, Zs=Zl=50Ω Parameter Symbol Conditions Measurement Unit data Operating Voltage VDD 2.85 V Inverter Voltage VINV 2.85 V Control Voltage (High) VCTL(H) 1.85 V Control Voltage (Low) VCTL(L) 0 V 2.27 mA 0 uA Operating current IDD1 RF OFF, VCTL=1.85V Operating current IDD2 RF OFF, VCTL=0V Inverter current IINV1 RF OFF, VCTL=1.85V 31.0 uA Inverter current IINV2 RF OFF, VCTL=0V 8.7 uA Control current ICTL RF OFF, VCTL=1.85V 5.2 uA 3-2-2 MEASURED DATA2 (RF) General conditions: VDD=VINV=2.85V, VCTL=1.85V, fRF=2.7~2.9GHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit Parameter Symbol Conditions Exclude PCB, Connector Losses (Input and Output: 0.23dB) Measurement data Unit 14.6 ~ 14.9 dB Small signal gain Gain Gain flatness Gflat 0.3 dB Isolation ISO -38.5 ~ -36.7 dB Noise figure NF 1.46 ~ 1.50 dB -11.8 ~ -9.7 dBm +4.1 ~ +6.6 dBm Pin at 1dB compression point Input 3rd order intercept point Exclude PCB, Connector Losses (Input: 0.14dB) P-1dB(IN) IIP3 f1=fRF, f2=fRF+100kHz, Pin=-30dBm RF Input port VSWR VSWRi 1.66 ~ 1.68 RF Output port VSWR VSWRo 1.66 ~ 2.15 1 Application Note 3 NJG1108HA8 3-3 APPLICATION CIRCUIT (Top View) GND 3 L2 3nH RFIN RFOUT 4 RF IN C1 100pF L4 4.3nH 2 RF OUT L1 10nH L3 2nH VDD=2.85V C2 1000pF Bias Circuit GND VINV Logic Circuit 5 1 VINV=2.85V C3 1000pF VCTL 6 VCTL=0V or 1.85V C4 1000pF 3-4 PCB DESIGN (Top View) Parts List Parts ID L1 ~ L4 VDD C1 ~ C4 Comment MURATA (LQP03T Series) MURATA (GRM03 Series) C2 L2 RF IN L1 C4 VCTL L3 L4 C1 RF OUT C3 VINV PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50Ω) PCB SIZE=17.0mm x 17.0mm CAUTION In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. 2 Application Note 3 NJG1108HA8 3-5-1 Typical Characteristics Condition: Ta=+25oC, VDD=VINV=2.85V, VCTL=1.85V, Zs=Zl=50Ω S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) 3 Application Note 3 NJG1108HA8 3-5-2 Typical Characteristics Gain, IDD vs. Pin (VDD=VINV=2.85V, VCTL=1.85V, fRF=2.8GHz) 20 18 0 16 Pout -10 -15 -20 P-1dB(IN)=-10.6dBm -25 -30 -40 -30 -20 -10 7 Gain 14 5 IDD 12 4 10 3 8 2 6 0 0 -30 -20 -60 IM3 IIP3=+4.9dBm -80 -100 -40 -30 14 20 OIP3 (dBm) Pout, IM3 (dBm) 22 Pout -40 -20 -10 0 12 OIP3 18 10 16 8 14 12 4 10 2 8 2.6 10 0 2.65 2.7 17 2.85 2.9 2.95 3 (VDD=VINV=2.85V, VCTL=1.85V) 20 16 Gain 15 2.5 14 2 13 1.5 12 NF 11 9 2.7 2.75 2.8 2.85 2.9 frequency (GHz) 10 5 10 (NF, Gain:Exclude PCB, Connector Losses) 2.65 15 k factor 3 Gain (dB) Noise Figure (dB) 2.8 k factor vs. frequency (VDD=VINV=2.85V, VCTL=1.85V) 3.5 0 2.6 2.75 frequency (GHz) NF, Gain vs. frequency 4 6 IIP3 Pin (dBm) 0.5 10 (VDD=VINV=2.85V, VCTL=1.85V, df=100kHz, Pin=-30dBm) 24 16 -20 1 0 OIP3, IIP3 vs. frequency Pout, IM3 vs. Pin (VDD=VINV=2.85V, VCTL=1.85V, fRF=2.8GHz, df=100kHz) 0 -10 Pin (dBm) Pin (dBm) 20 1 P-1dB(IN)=-10.6dBm 4 -40 10 6 IIP3 (dBm) -5 8 IDD (mA) 5 Gain (dB) Pout (dBm) 10 Pout vs. Pin (VDD=VINV=2.85V, VCTL=1.85V, fRF=2.8GHz) 2.95 3 0 0 5 10 15 20 frequency (GHz) 4