NJG1126HB6 W-LAN/WiMAX 2.5 to 2.7GHz Band Application(英語)

Application Note 4
NJG1126HB6
W-LAN/WiMAX Application
4. 2.5-2.7GHz BAND APPLICATION
4-1 SUMMARY
The characteristics of 2.7GHz band have evaluated as follows. The evaluation circuit
structure and measured data are reviewed.
4-2-1 MEASURED DATA1 (DC)
General conditions: VDD=VINV=2.85V, Ta=+25oC, Zs=Zl=50Ω
Parameter
Symbol
Conditions
Measurement
Unit
data
Operating Voltage
VDD
2.85
V
Inverter Voltage
VINV
2.85
V
Control Voltage (High)
VCTL(H)
1.85
V
Control Voltage (Low)
VCTL(L)
0
V
Operating current
IDD1
RF OFF, VCTL=1.85V
2.63
mA
Operating current
IDD2
RF OFF, VCTL=0V
0.03
uA
Inverter current
IINV1
RF OFF, VCTL=1.85V
98.1
uA
Inverter current
IINV2
RF OFF, VCTL=0V
18.1
uA
Control current
ICTL
RF OFF, VCTL=1.85V
4.5
uA
1
Application Note 4
NJG1126HB6
4-2-2 MEASURED DATA2 (LNA HIGH GAIN MODE)
General conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=2585MHz, Ta=+25oC, Zs=Zl=50Ω
with application circuit
Measurement
Parameter
Symbol
Conditions
Unit
data
Operating current
IDD
Small signal gain
Gain
Noise figure
Pin at 1dB
compression point
Input 3rd order
intercept point
NF
RF OFF
Exclude PCB/Connector losses
(0.11dB)
P-1dB(IN)
IIP3
f1=fRF, f2=fRF+100kHz,
Pin=-32dBm
2.47
mA
15.3
dB
1.65
dB
-9.7
dBm
+2.4
dBm
RF Input port VSWR
VSWRi
1.95
RF Output port VSWR
VSWRo
1.53
4-2-3 MEASURED DATA3 (LNA LOW GAIN MODE)
General conditions: VDD=VINV=2.7V, VCTL=0V, fRF=2585MHz, Ta=+25oC, Zs=Zl=50Ω
with application circuit
Measurement
Parameter
Symbol
Conditions
data
Small signal gain
Noise figure
Pin at 1dB
compression point
Input 3rd order
intercept point
Gain
NF
Exclude PCB/Connector losses
(0.11dB)
P-1dB(IN)
IIP3
f1=fRF, f2=fRF+100kHz,
Pin=-16dBm
Unit
-7.0
dB
7.0
dB
+11.0
dBm
+14.8
dBm
RF Input port VSWR
VSWRi
1.12
RF Output port VSWR
VSWRo
1.38
2
Application Note 4
NJG1126HB6
4-3 APPLICATION CIRCUIT
(Top View)
RF IN
L2
1.5nH
4
GND
RFIN
5
C1
5pF
L4
8.2nH
RFOUT
RF OUT
3
L3
6.2nH
L1
3nH
VDD=2.7V
GND
GND
6
2
C2
1000pF
Bias
Circuit
VCTL=0V or 1.85V
VCTL
7
Logic
Circuit
VINV
VINV=2.7V
1
C3
1000pF
8
GND
1 Pin INDEX
4-4 PCB DESIGN
(Top View)
Parts List
Parts ID
L1~L4
VDD
C1~C3
Comment
TAIYO-YUDEN
(HK1005 Series)
MURATA
(GRM15 Series)
C2
RF IN
L3
L1
L2
L4
C1
RF OUT
C3
VCTL
VINV
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z0=50Ω)
PCB SIZE=17.0mm x 17.0mm
3
Application Note 4
NJG1126HB6
4-5-1 TYPICAL CHARACTERISTICS (LNA HIGH GAIN MODE)
Condition: Ta=+25oC, VDD=VINV=2.7V, VCTL=1.85V, Zs=Zl=50Ω
NJG1126HB6 @High Gain
Gain, IDD vs. Pin
NJG1126HB6 @High Gain
Pout vs. Pin
(f=2585MHz)
(f=2585MHz)
10
20
5
18
7
6
Gain
-5
-10
-15
P-1dB(IN)=-9.7dBm
-10
0
3
10
2
6
-40
10
P-1dB(IN)=-9.7dBm
0
-30
-20
-40
-60
12
22
10
8
OIP3
18
6
16
4
14
2
IIP3
12
IM3
IIP3=+2.4dBm
-30
24
20
OIP3 (dBm)
Pout, IM3 (dBm)
Pout
-80
-20
-10
Pin (dBm)
10
(f1=2.56~2.62GHz, f2=f1+100kHz, Pin=-32dBm)
(f1=2585MHz, f2=f1+100kHz)
-20
-100
-40
0
NJG1126HB6 @High Gain
OIP3, IIP3 vs. frequency
NJG1126HB6 @High Gain
Pout, IM3 vs. Pin
0
-10
Pin (dBm)
Pin (dBm)
20
1
10
0
10
8
2.56
IIP3 (dBm)
-20
4
IDD
12
8
-20
-30
14
IDD (mA)
Gain (dB)
Pout (dBm)
Pout
-25
-40
5
16
0
0
-2
2.57
2.58
2.59
2.6
2.61
-4
2.62
frequency (GHz)
4
Application Note 4
NJG1126HB6
4-5-2 TYPICAL CHARACTERISTICS (LNA HIGH GAIN MODE)
Condition: Ta=+25oC, VDD=VINV=2.7V, VCTL=1.85V, Zs=Zl=50Ω
NJG1126HB6 @High Gain
Gain,Isolation vs. frequency
NJG1126HB6 @High Gain
Return Loss vs. frequency
(f=1~4GHz)
20
0
30
10
-10
20
0
-20
-10
-30
(f=1~4GHz)
-40
Reverse Isolation
-30
-50
-40
1.5
2
2.5
3
3.5
10
Output Return Loss
0
-10
Input Return Loss
-20
-30
-60
1
Return Loss (dB)
-20
Reverse Isolation (dB)
Gain (dB)
Gain
1
4
1.5
2
2.5
3
3.5
4
frequency (GHz)
frequency (GHz)
NJG1126HB6 @High Gain
Gain,NF vs. frequency
(f=2.5~2.7GHz)
18
4.0
17
3.5
3.0
Gain (dB)
Gain
15
2.5
14
2.0
13
1.5
NF
12
1.0
11
0.50
10
2.5
2.55
2.6
2.65
Noise Figure (dB)
16
0.0
2.7
frequency (GHz)
5
Application Note 4
NJG1126HB6
4-5-3 TYPICAL CHARACTERISTICS (LNA HIGH GAIN MODE)
Condition: Ta=+25oC, VDD=VINV=2.7V, VCTL=1.85V, Zs=Zl=50Ω
S11, S22
S21, S12
VSWR
Zin, Zout
6
Application Note 4
NJG1126HB6
4-5-4 TYPICAL CHARACTERISTICS (LNA HIGH GAIN MODE)
Condition: Ta=+25oC, VDD=VINV=2.7V, VCTL=1.85V, Zs=Zl=50Ω
S11, S22 (f=50MHz ~ 20GHz)
S21, S12 (f=50MHz ~ 20GHz)
NJG1126HB6 @High Gain
k factor vs. frequency
(f=50M~20GHz)
20
k factor
15
10
5
0
0
5
10
15
20
frequency (GHz)
7
Application Note 4
NJG1126HB6
4-5-5 TYPICAL CHARACTERISTICS (LNA LOW GAIN MODE)
Condition: Ta=+25oC, VDD=VINV=2.7V, VCTL=0V, Zs=Zl=50Ω
NJG1126HB6 @Low Gain
Pout vs. Pin
(f=2585MHz)
(f=2585MHz)
-4
-6
-10
-8
40
-10
30
Pout
-20
-30
-50
-40
50
Gain
IDD
-12
P-1dB(IN)=+11.0dBm
-30
-20
-10
0
-14
10
-16
-40
20
0
-30
-20
-10
0
(f1=2585MHz, f2=f1+100kHz)
10
OIP3 (dBm)
0
Pout
-40
-60
24
22
OIP3
8
20
6
18
4
16
2
IIP3
IM3
IIP3=+14.8dBm
-20
-10
Pin (dBm)
20
(f1=2.56~2.62GHz, f2=f1+100kHz, Pin=-16dBm)
12
-30
10
NJG1126HB6 @Low Gain
OIP3, IIP3 vs. frequency
20
-100
-40
10
Pin (dBm)
NJG1126HB6 @Low Gain
Pout, IM3 vs. Pin
-80
20
P-1dB(IN)=+11.0dBm
Pin (dBm)
-20
IDD (uA)
Gain (dB)
0
-40
Pout, IM3 (dBm)
60
0
10
0
20
-2
2.56
IIP3 (dBm)
10
Pout (dBm)
NJG1126HB6 @Low Gain
Gain, IDD vs. Pin
14
12
2.57
2.58
2.59
2.6
2.61
10
2.62
frequency (GHz)
8
Application Note 4
NJG1126HB6
4-5-6 TYPICAL CHARACTERISTICS (LNA LOW GAIN MODE)
Condition: Ta=+25oC, VDD=VINV=2.7V, VCTL=0V, Zs=Zl=50Ω
NJG1126HB6 @Low Gain
Loss,Isolation vs. frequency
NJG1126HB6 @Low Gain
Return Loss vs. frequency
(f=1~4GHz)
0
30
10
-10
20
0
-20
-10
-30
20
(f=1~4GHz)
-40
-30
-50
-40
-60
1
1.5
2
2.5
3
3.5
4
Return Loss (dB)
Loss
-20
Reverse Isolation (dB)
Loss (dB)
Reverse Isolation
10
Output Return Loss
0
-10
-20
Input Return Loss
-30
1
1.5
2
2.5
3
3.5
4
frequency (GHz)
frequency (GHz)
NJG1126HB6 @Low Gain
NF vs. frequency
(f=2.5~2.7GHz)
12
Noise Figure (dB)
11
10
9
8
NF
7
6
5
4
2.5
2.55
2.6
2.65
2.7
frequency (GHz)
9
Application Note 4
NJG1126HB6
4-5-7 TYPICAL CHARACTERISTICS (LNA LOW GAIN MODE)
Condition: Ta=+25oC, VDD=VINV=2.7V, VCTL=0V, Zs=Zl=50Ω
S11, S22
S21, S12
VSWR
Zin, Zout
10
Application Note 4
NJG1126HB6
4-5-8 TYPICAL CHARACTERISTICS (LNA LOW GAIN MODE)
Condition: Ta=+25oC, VDD=VINV=2.7V, VCTL=0V, Zs=Zl=50Ω
S11, S22 (f=50MHz ~ 20GHz)
S21, S12 (f=50MHz ~ 20GHz)
NJG1126HB6 @Low Gain
k factor vs. frequency
(f=50M~20GHz)
20
k factor
15
10
5
0
0
5
10
15
20
frequency (GHz)
11