NJG1133MD7 2.1GHz/ 800MHz/ 1.9GHz Band Application(英語)

Application Note1
1
NJG1133MD7
2.1GHz/800MHz/1.9GHz Bands Application
1-1 Summary
The characterisitics of 2.1GHz/800MHz/1.9GHz bands have evaluated as follows. The evaluation
circuit structure and measured data are reviewed.
1-2-1 Measurement data of assembled evaluation board
DC Characteristics
General conditions : VDD=2.8V, Ta=+25oC
Measurement
data
Units
VDD
2.8
V
Control Voltage 1 (High)
VCTL1(H)
1.8
V
Control Voltage 1 (Low)
VCTL1(L)
0
V
Control Voltage 2 (High)
VCTL2(H)
1.8
V
Control Voltage 2 (Low)
VCTL2(L)
0
V
Control Voltage 3 (High)
VCTL3(H)
1.8
V
Control Voltage 3 (Low)
LNA Operating Current 1
(2.1GHz High Gain Mode)
LNA Operating Current 2
(800MHz High Gain Mode)
LNA Operating Current 3
(1.9GHz High Gain Mode)
LNA Operating Current 4
(Low Gain Mode)
Control Current 1
VCTL3(L)
0
V
Parameter
LNA Supply Voltage
Symbol
Condition
IDD1
VCTL1=0V, VCTL2=0V, VCTL3=1.8V
2.51
mA
IDD2
VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V
2.54
mA
IDD3
VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V
2.43
mA
IDD4
VCTL3=0V
32.2
uA
ICTL1
VCTL1=1.8V
5.0
uA
Control Current 2
ICTL2
VCTL2=1.8V
4.9
uA
Control Current 3
ICTL3
VCTL3=1.8V
5.0
uA
1/19
Application Note1
1
NJG1133MD7
1-2-2 Measurement data of assembled evaluation board
RF Characteristics 1 (2.1GHz Band High Gain Mode)
General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=2110~2170MHz,
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter
Small Signal Gain 1
Isolation 1
Noise Figure 1
Symbol
Measurement
Data
Units
Gain 1
15.7~16.0
dB
ISO 1
-29.9~-29.3
dB
NF 1
1.29~1.30
dB
P-1dB(IN)_1
-9.6~-9.2
dBm
IIP3H1_1
-0.3~-0.1
dBm
VSWRi_1
1.38~1.63
-
VSWRo_1
1.86~1.92
-
Symbol
Measurement
Data
Units
Gain 2
-3.6~-3.5
dB
ISO 2
-3.6~-3.5
dB
NF 2
3.4~4.1
dB
P-1dB(IN)_2
+14.0~+14.3
dBm
IIP3_2
+10.8~+11.8
dBm
VSWRi_2
1.21~1.43
-
VSWRo_2
1.62~1.76
-
Condition
Exclude Input&Output PCB,
Connector Losses (0.45dB)
Exclude Input&Output PCB,
Connector Losses (0.45dB)
Exclude PCB, Connector
Losses (0.09dB)
Input Power 1dB
Compression 1
Input 3rd Order
f1=fRF, f2=fRF+100kHz,
Intercept Point 1 Pin=-30dBm
RF IN VSWR 1
RF OUT VSWR 1
RF Characteristics 2 (2.1GHz Band Low Gain Mode)
General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=2110~2170MHz,
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter
Small Signal Gain 2
Isolation 2
Noise Figure 2
Condition
Exclude Input&Output PCB,
Connector Losses (0.45dB)
Exclude Input&Output PCB,
Connector Losses (0.45dB)
Exclude PCB, Connector
Losses (0.09dB)
Input Power 1dB
Compression 2
Input 3rd Order
f1=fRF, f2=fRF+100kHz,
Intercept Point 2 Pin=-16dBm
RF IN VSWR 2
RF OUT VSWR 2
2/19
Application Note1
1
NJG1133MD7
1-2-3 Measurement data of assembled evaluation board
RF Characteristics 3 (800MHz Band High Gain Mode)
General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, fRF=869~900MHz,
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter
Small Signal Gain 3
Isolation 3
Noise Figure 3
Symbol
Measurement
Data
Units
Gain 3
15.9~16.0
dB
ISO 3
-34.7~-34.4
dB
NF 3
1.31~1.44
dB
P-1dB(IN)_3
-9.4~-9.3
dBm
IIP3H1_3
-2.8~-2.1
dBm
VSWRi_3
1.62~1.73
-
VSWRo_3
2.21~2.34
-
Symbol
Measurement
Data
Units
Gain 4
-3.1~-3.0
dB
ISO 4
-3.1~-3.0
dB
NF 4
3.0~3.9
dB
P-1dB(IN)_4
+17.1~+17.7
dBm
IIP3_4
+13.8~+14.5
dBm
VSWRi_4
1.26~1.38
-
VSWRo_4
1.66~1.75
-
Condition
Exclude Input&Output PCB,
Connector Losses (0.22dB)
Exclude Input&Output PCB,
Connector Losses (0.22dB)
Exclude PCB, Connector
Losses (0.06dB)
Input Power 1dB
Compression 3
Input 3rd Order
f1=fRF, f2=fRF+100kHz,
Intercept Point 3 Pin=-30dBm
RF IN VSWR 3
RF OUT VSWR 3
RF Characteristics 4 (800MHz Band Low Gain Mode)
General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, fRF=869~900MHz,
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter
Small Signal Gain 4
Isolation 4
Noise Figure 4
Condition
Exclude Input&Output PCB,
Connector Losses (0.22dB)
Exclude Input&Output PCB,
Connector Losses (0.22dB)
Exclude PCB, Connector
Losses (0.06dB)
Input Power 1dB
Compression 4
Input 3rd Order
f1=fRF, f2=fRF+100kHz,
Intercept Point 4 Pin=-20dBm
RF IN VSWR 4
RF OUT VSWR 4
3/19
Application Note1
1
NJG1133MD7
1-2-4 Measurement data of assembled evaluation board
RF Characteristics 5 (1.9GHz Band High Gain Mode)
General condition : VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, fRF=1930~1990MHz,
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter
Small Signal Gain 5
Isolation 5
Noise Figure 5
Symbol
Measurement
Data
Units
Gain 5
15.5~16.0
dB
ISO 5
-26.1~-25.8
dB
NF 5
1.36~1.38
dB
P-1dB(IN)_5
-8.6~-8.1
dBm
IIP3H1_5
+0.3~+1.0
dBm
VSWRi_5
1.85~1.99
-
VSWRo_5
1.63~1.76
-
Condition
Exclude Input&Output PCB,
Connector Losses (0.41dB)
Exclude Input&Output PCB,
Connector Losses (0.41dB)
Exclude PCB, Connector
Losses (0.10dB)
Input Power 1dB
Compression 5
Input 3rd Order
f1=fRF, f2=fRF+100kHz,
Intercept Point 5 Pin=-30dBm
RF IN VSWR 5
RF OUT VSWR 5
RF Characteristics 6 (1.9GHz Band Low Gain Mode)
General condition : VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V, fRF=1930~1990MHz,
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter
Small Signal Gain 6
Isolation 6
Noise Figure 6
Condition
Exclude Input&Output PCB,
Connector Losses (0.41dB)
Exclude Input&Output PCB,
Connector Losses (0.41dB)
Exclude PCB, Connector
Losses (0.10dB)
Input Power 1dB
Compression 6
Input 3rd Order
f1=fRF, f2=fRF+100kHz,
Intercept Point 6 Pin=-16dBm
RF IN VSWR 6
RF OUT VSWR 6
Symbol
Measurement
Data
Units
Gain 6
-4.2~-4.1
dB
ISO 6
-4.2~-4.1
dB
NF 6
3.8~4.7
dB
P-1dB(IN)_6
+16.3~+16.8
dBm
IIP3_6
+14.1~+14.7
dBm
VSWRi_6
1.56~1.61
-
VSWRo_6
2.22~2.26
-
4/19
Application Note1
1
NJG1133MD7
1-3 Pin configuration
GND 11
RFIN3 10
9
GND
GND
8
RFOUT3
RFIN2
13
12
7
1.9GHz Band
Bias
Circuit
RFOUT2
RFIN1
13
6
2.1GHz Band
Bias
Circuit
Logic
Circuit
VCTL3
800MHz Band
14
5
Bias
Circuit
GND
1
VCTL2 2
RFOUT1
VCTL1 3
GND
4
VCTL terminal function
VCTL1, VCTL2:Band Select (2.1GHz or 800MHz or 1.9GHz)
VCTL3:RX ATT Select (High Gain mode or Low Gain mode)
1-4 Truth table
VCTL1
Control Voltage
VCTL2
VCTL3
2.1GHz Band
(Band Sel1)
(Band Sel2)
(RX ATT)
LNA IDD
L
L
H
H
L
L
H
H
L
L
L
L
H
H
H
H
L
H
L
H
L
H
L
H
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
State
800MHz Band
Bypass
LNA IDD
ON
OFF
ON
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
1.9GHz Band
Bypass
LNA IDD
Bypass
ON
OFF
ON
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
ON
ON
OFF
ON
OFF
ON
OFF
ON
OFF
5/19
Application Note1
1
NJG1133MD7
1-5-1 Typical characteristics (2.1GHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V
2.1GHz @High Gain
Gain, IDD vs. Pin
2.1GHz @High Gain
Pout vs. Pin
(f=2140MHz)
10
(f=2140MHz)
20
5
Gain (dB)
-5
Pout
-10
-15
15
6
10
4
5
-20
2
IDD
-25
P-1dB(IN)=-9.3dBm
P-1dB(IN)=-9.3dBm
-30
-20
-10
0
0
-40
10
-30
-20
0
10
0
Pin (dBm)
Pin (dBm)
2.1GHz @High Gain
OIP3, IIP3 vs. frequency
2.1GHz @High Gain
Pout, IM3 vs. Pin
(f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm)
(f1=2140MHz, f2=f1+100kHz)
20
-10
0
Pout, IM3 (dBm)
Pout
OIP3 (dBm)
-20
-40
-60
IM3
-80
20
6
19
5
18
4
3
17
OIP3
16
2
15
1
14
0
IIP3
13
IIP3 (dBm)
-30
-40
IDD (mA)
Gain
0
Pout (dBm)
8
-1
IIP3=-0.1dBm
-100
-40
-30
-20
-10
0
2.12
2.14
2.16
2.18
Pin (dBm)
frequency (GHz)
2.1GHz @High Gain
NF, Gain vs. frequency
2.1GHz @High Gain
k factor vs. frequency
(f=2.0~2.3GHz)
4
-2
2.2
(f=50MHz~20GHz)
20
20
18
Gain
2.5
14
2
12
1.5
10
NF
1
15
16
8
k factor
3
Gain (dB)
3.5
NF (dB)
12
2.1
10
10
5
6
0.5
(Exclude PCB, Connector Losses)
0
2
2.05
2.1
2.15
2.2
frequency (GHz)
2.25
4
2.3
0
0
5
10
15
20
frequency (GHz)
6/19
Application Note1
1
NJG1133MD7
1-5-2 Typical characteristics (2.1GHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
7/19
Application Note1
1
NJG1133MD7
1-5-3 Typical characteristics (2.1GHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V
2.1GHz @Low Gain
Pout vs. Pin
2.1GHz @Low Gain
Gain, IDD vs. Pin
(f=2140MHz)
0
10
55
-2
0
50
Gain
Gain (dB)
-10
-20
Pout
45
-6
40
-8
35
-30
-10
-40
30
IDD
P-1dB(IN)=+14.1dBm
P-1dB(IN)=+14.1dBm
-50
-40
-30
-20
-10
0
10
-12
-40
20
-30
-20
Pin (dBm)
0
10
25
2.1GHz @Low Gain
OIP3, IIP3 vs. frequency
(f1=2140MHz, f2=f1+100kHz)
14
(f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-16dBm)
12
12
IIP3
OIP3 (dBm)
-20
Pout
-40
-60
IM3
11
11
10
10
9
9
OIP3
8
-80
14
13
13
0
Pout, IM3 (dBm)
20
Pin (dBm)
2.1GHz @Low Gain
Pout, IM3 vs. Pin
20
-10
IIP3 (dBm)
Pout (dBm)
-4
IDD (uA)
(f=2140MHz)
20
8
7
7
IIP3=+11.2dBm
-100
-40
-30
-20
-10
0
10
2.12
2.14
2.16
2.18
Pin (dBm)
frequency (GHz)
2.1GHz @Low Gain
NF, Gain vs. frequency
2.1GHz @Low Gain
k factor vs. frequency
(f=2.0~2.3GHz)
14
0
6
2.2
(f=50MHz~20GHz)
20
-2
10
8
-6
6
-8
NF
-10
4
15
-4
k factor
Gain
Gain (dB)
12
NF (dB)
6
2.1
20
10
5
-12
2
(Exclude PCB, Connector Losses)
0
2
2.05
2.1
2.15
2.2
frequency (GHz)
2.25
-14
2.3
0
0
5
10
15
20
frequency (GHz)
8/19
Application Note1
1
NJG1133MD7
1-5-4 Typical characteristics (2.1GHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22
S21, S12
(f=50MHz~20GHz)
(f=50MHz~20GHz)
9/19
Application Note1
1
NJG1133MD7
1-5-5 Typical characteristics (800MHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V
800MHz @High Gain
Pout vs. Pin
800MHz @High Gain
Gain, IDD vs. Pin
(f=885MHz)
10
(f=885MHz)
20
5
Gain (dB)
-5
Pout
-10
-15
15
6
10
4
5
-20
IDD (mA)
Gain
0
Pout (dBm)
8
2
IDD
-25
P-1dB(IN)=-9.3dBm
-30
-20
P-1dB(IN)=-9.3dBm
-10
0
0
-40
10
-30
-20
Pin (dBm)
0
10
0
Pin (dBm)
800MHz @High Gain
Pout, IM3 vs. Pin
800MHz @High Gain
OIP3, IIP3 vs. frequency
(f1=885MHz, f2=f1+100kHz)
20
-10
17
0
Pout, IM3 (dBm)
Pout
OIP3 (dBm)
-20
-40
-60
(f1=860~910MHz, f2=f1+100kHz, Pin=-30dBm)
16
3
15
2
1
14
OIP3
13
0
12
-1
-2
11
IM3
4
IIP3 (dBm)
-30
-40
IIP3
-80
-3
10
IIP3=-2.1dBm
-100
-40
-30
-20
-10
0
9
860
10
870
880
Pin (dBm)
(f=750~1000MHz)
(f=50MHz~20GHz)
20
18
16
2.5
14
2
12
1.5
10
8
NF
15
k factor
Gain
Gain (dB)
3
NF (dB)
-4
910
800MHz @High Gain
k factor vs. frequency
20
3.5
1
900
frequency (MHz)
800MHz @High Gain
NF, Gain vs. frequency
4
890
10
5
6
0.5
(Exclude PCB, Connector Losses)
0
750
800
850
900
frequency (MHz)
950
4
1000
0
0
5
10
15
20
frequency (GHz)
10/19
Application Note1
1
NJG1133MD7
1-5-6 Typical characteristics (800MHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22
S21, S12
(f=50MHz~20GHz)
(f=50MHz~20GHz)
11/19
Application Note1
1
NJG1133MD7
1-5-7 Typical characteristics (800MHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V
800MHz @Low Gain
Pout vs. Pin
800MHz @Low Gain
Gain, IDD vs. Pin
(f=885MHz)
20
10
50
-10
Pout
-4
45
-6
40
-8
35
IDD (uA)
Gain
Gain (dB)
Pout (dBm)
55
-2
0
-20
(f=885MHz)
0
-30
-10
-40
30
IDD
P-1dB(IN)=+17.7dBm
-30
-20
-10
0
P-1dB(IN)=+17.7dBm
10
-12
-40
20
-10
0
800MHz @Low Gain
Pout, IM3 vs. Pin
800MHz @Low Gain
OIP3, IIP3 vs. frequency
17
OIP3 (dBm)
-20
Pout
-40
-60
(f1=860~910MHz, f2=f1+100kHz, Pin=-20dBm)
17
16
16
15
15
IIP3
14
14
13
13
12
12
11
IM3
-80
25
20
10
Pin (dBm)
0
Pout, IM3 (dBm)
-20
Pin (dBm)
(f1=885MHz, f2=f1+100kHz)
20
-30
IIP3 (dBm)
-50
-40
11
OIP3
10
10
IIP3=+14.5dBm
-30
-20
-10
0
10
880
890
900
frequency (MHz)
800MHz @Low Gain
NF, Gain vs. frequency
800MHz @Low Gain
k factor vs. frequency
(f=750~1000MHz)
0
9
910
(f=50MHz~20GHz)
20
-2
12
15
-4
10
Gain
8
-6
6
-8
4
-10
NF
k factor
NF (dB)
870
Pin (dBm)
14
2
9
860
20
Gain (dB)
-100
-40
10
5
-12
(Exclude PCB, Connector Losses)
0
750
800
850
900
frequency (MHz)
950
-14
1000
0
0
5
10
15
20
frequency (GHz)
12/19
Application Note1
1
NJG1133MD7
1-5-8 Typical characteristics (800MHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22
S21, S12
(f=50MHz~20GHz)
(f=50MHz~20GHz)
13/19
Application Note1
1
NJG1133MD7
1-5-9 Typical characteristics (1.9GHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V
1.9GHz @High Gain
Pout vs. Pin
1.9GHz @High Gain
Gain, IDD vs. Pin
(f=1960MHz)
10
(f=1960MHz)
20
8
5
Gain (dB)
Pout (dBm)
-5
Pout
-10
-15
15
6
10
4
5
-20
IDD (mA)
Gain
0
2
IDD
-25
P-1dB(IN)=-8.4dBm
-30
-20
P-1dB(IN)=-8.4dBm
-10
0
0
-40
10
-10
1.9GHz @High Gain
Pout, IM3 vs. Pin
1.9GHz @High Gain
OIP3, IIP3 vs. frequency
18
0
10
0
Pin (dBm)
(f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-30dBm)
OIP3
16
Pout
OIP3 (dBm)
-20
-40
-60
IM3
-80
5
4
17
0
Pout, IM3 (dBm)
-20
Pin (dBm)
(f1=1960MHz, f2=f1+100kHz)
20
-30
3
2
15
1
14
IIP3
13
0
12
-1
11
-2
IIP3 (dBm)
-30
-40
IIP3=+0.6dBm
-30
-20
-10
0
1.94
1.96
1.98
frequency (GHz)
1.9GHz @High Gain
NF, Gain vs. frequency
1.9GHz @High Gain
k factor vs. frequency
(f=1.8~2.1GHz)
20
-3
2.00
(f=50MHz~20GHz)
20
18
3.0
Gain
16
2.5
14
2.0
12
10
NF
8
1.0
15
k factor
3.5
NF (dB)
1.92
Pin (dBm)
4.0
1.5
10
1.90
10
Gain (dB)
-100
-40
10
5
6
0.5
(Exclude PCB, Connector Losses)
0.0
1.80
1.85
1.90
1.95
2.00
frequency (GHz)
2.05
4
2.10
0
0
5
10
15
20
frequency (GHz)
14/19
Application Note1
1
NJG1133MD7
1-5-10 Typical characteristics (1.9GHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22
S21, S12
(f=50MHz~20GHz)
(f=50MHz~20GHz)
15/19
Application Note1
1
NJG1133MD7
1-5-11 Typical characteristics (1.9GHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V
1.9GHz @Low Gain
Pout vs. Pin
1.9GHz @Low Gain
Gain, IDD vs. Pin
(f=1960MHz)
20
(f=1960MHz)
0
300
Gain
10
-5
200
-10
100
-10
-20
IDD
-15
Pout
0
IDD (uA)
Gain (dB)
Pout (dBm)
0
-30
-100
-20
-40
P-1dB(IN)=+16.6dBm
-30
-20
-10
0
10
P-1dB(IN)=+16.6dBm
-25
-40
20
-10
0
10
Pin (dBm)
1.9GHz @Low Gain
Pout, IM3 vs. Pin
1.9GHz @Low Gain
OIP3, IIP3 vs. frequency
16
0
-20
OIP3 (dBm)
Pout, IM3 (dBm)
-20
Pin (dBm)
(f1=1960MHz, f2=f1+100kHz)
20
-30
Pout
-40
-60
-200
20
(f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-16dBm)
18
15
17
14
16
13
IIP3
15
12
14
11
13
10
IIP3 (dBm)
-50
-40
12
OIP3
IM3
-80
11
9
IIP3=+14.6dBm
-100
-40
-30
-20
-10
0
10
8
1.90
20
1.92
Pin (dBm)
(f=1.8~2.1GHz)
10
2.00
(f=50MHz~20GHz)
20
-2
-6
6
-8
-10
k factor
8
NF
15
-4
Gain (dB)
Gain
10
NF (dB)
1.98
1.9GHz @Low Gain
k factor vs. frequency
0
12
4
1.96
frequency (GHz)
1.9GHz @Low Gain
NF, Gain vs. frequency
14
1.94
10
5
-12
2
(Exclude PCB, Connector Losses)
0
1.80
1.85
1.90
1.95
2.00
frequency (GHz)
2.05
-14
2.10
0
0
5
10
15
20
frequency (GHz)
16/19
Application Note1
1
NJG1133MD7
1-5-12 Typical characteristics (1.9GHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22
S21, S12
(f=50MHz~20GHz)
(f=50MHz~20GHz)
17/19
Application Note1
1
NJG1133MD7
1-6 Application circuit
RF IN3
(1.9GHz)
(Top View)
L8
0.9nH
L7
2.9nH
GND
11
RFIN3 10
9
GND
GND
8
RF OUT3
(1.9GHz )
RF IN2
(2.1GHz )
L5
1.6nH
13
12
7
1.9GHz Band
L4
2.4nH
RF IN1
(800MHz)
L2
8.2nH
C4
3.0pF
L9
2.9nH
RFOUT3
RFIN2
C5
0.01uF
Bias
Circuit
C2
2.0pF
RFOUT2
RFIN1
13
RF OUT2
(2.1GHz)
6
2.1GHz Band
L1
12nH
L6
2.4nH
Bias
Circuit
Logic
Circuit
C3
0.01uF
800MHz Band
VCTL3
14
C1
2.0pF
5
Bias
Circuit
VCTL3=0 or 1.8V
(RX ATT)
RF OUT1
(800MHz)
RFOUT1
L3
10nH
GND
1
VCTL2
2
VCTL1 3
VCTL2=0 or 1.8V
(Band Sel2)
GND
4
VDD=2.7V
VCTL1=0 or 1.8V
(Band Sel1)
Parts List
Parts ID
Comments
L1, L2, L4 ~L9
MURATA (LQP03T Series)
TDK (MLK0603 Series)
MURATA (GRM03 Series)
L3
C1~C5
18/19
Application Note1
1
NJG1133MD7
1-7 Evaluation board
(Top View)
RF IN3
RF OUT3
(1.9GHz)
(1.9GHz)
L7
C4
L8
RF IN2
(2.1GHz)
L4
L5
L9
C5
VDD
L6
C2
L3
C3
L2
VDD
C1
RF OUT2
(2.1GHz)
L1
VCTL3
VCTL2
VCTL1
RF IN1
RF OUT1
(800MHz)
(800MHz)
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm)
PCB SIZE=35.4mm x 17.0mm
CAUTION
In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.
19/19