2574

NTE2574 (NPN) & NTE2575 (PNP)
Silicon Complementary Transistors
Video Output for HDTV
TO−220 Full Pack
Features:
D High Collector Emitter Breakdown Voltage: VCEO = 120V Min
D High Gain Bandwidth Product: fT = 400MHz Typ
D Low Reverse Transfer Capacitance and Excellent High Frequency Characteristics:
NTE2574: Cre = 2.7pF
NTE2575: Cre = 4.0pF
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Collector Power Dissipation, PC
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W
TA = +50C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Note 1. NTE2574 is a discontinued device and no longer available.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
0.1
A
1.0
A
Collector Cutoff Current
ICBO
VCB = 80V, IE = 0
−
Emitter Cutoff Current
IEBO
VEB = 2V, IC = 0
−
DC Current Gain
hFE
VCE = 10V, IC = 50mA
100
−
320
VCE = 10V, IC = 200mA
20
−
−
VCE = 10V, IC = 50mA
−
400
−
MHz
VCB = 30V, f = 1MHz
−
3.1
−
pF
−
4.4
−
pF
Gain Bandwidth Product
Output Capacitance
NTE2574
NTE2575
fT
Cob
Rev. 6−15
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Reverse Transfer Capacitance
NTE2574
Cre
Test Conditions
VCB = 30V, f = 1MHz
NTE2575
Min
Typ
Max
Unit
−
2.7
−
pF
−
4.0
−
pF
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 50mA, IB = 5mA
−
−
1.0
V
Emitter Base Saturation Voltage
VBE(sat)
IC = 50mA, IB = 5mA
−
−
1.0
V
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated