2588

NTE2588
Silicon NPN Transistor
Horizontal Output for HDTV
TO−220 Full Pack
Features:
D High Breakdown Voltage: V(BR)CEO = 1200V Min
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.3C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
1
A
1
A
Collector Cutoff Current
ICBO
VCB = 1200V, IE = 0
−
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
−
DC Current Gain
hFE
VCE = 5V, IC = 1.5A
10
−
60
fT
VCE = 10V, IC = 1.5A
−
6
−
MHz
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 3mA, IB = 0.6mA
−
−
5
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 3mA, IB = 0.6mA
−
−
2
V
V(BR)CBO IC = 100A, IE = 0
1500
−
−
V
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = 
1200
−
−
V
5
−
−
V
−
2.0
−
pF
Gain Bandwidth Product
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Output Capacitance
V(BR)EBO IE = 100A, IC = 0
Cob
VCB = 100V, f = 1MHz
Rev. 6−15
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated