2N4033 Silicon PNP Transistor Small Signal General Purpose

2N4033
Silicon PNP Transistor
Small Signal General Purpose Amplifier
TO−39 Type Package
Description:
The 2N4033 is a silicon transistor in a TO−39 type package designed primarily for amplifier and
switching applications. This device features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range.
Absolute Maximum Ratings: (Note 1)
Collector−Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation (TA = +25C, Note 3), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mW
Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.56mw/C
Power Dissipation (TC = +25C, Note 3), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W
Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22.8mw/C
Operating Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43.7C/W
Note 1. These ratings are limiting values above which the serviceability of any device may be impaired.
Note 2. Rating refers to a high current point where Collector−Emitter voltage is lowest.
Note 3. These are steady state limits and give a maximum junction temperature of +200C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Base Breakdown Voltage
BVCBO
IC = 10, IE = 0
80
−
−
V
Emitter Base Breakdown Voltage
BVEBO
IE = 10, IC = 0
5
−
−
V
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
−
−
10
A
Collector Cutoff Current
ICBO
VCB = 60V, IE = 0
−
−
50
nA
VCB = 60V, TA = 150C
−
−
50
A
IC = 100A, VCE = 5V
75
−
−
IC = 100A, VCE = 5V, Note 4
100
−
300
IC = 500mA, VCE = 5V, Note 4
70
−
−
IC = 1A, VCE = 5V, Note 4
25
−
−
IC = 100mA, VCE = 5V,
TA = −55C, Note 4
40
−
−
DC Current Gain
hFE
Note 4. Pulse Test; Pulse Width  300s, Duty Cycle = 1%
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Emitter Sustaining Voltage
VCEO
IC = 10mA (pulsed), IB = 0, Note 4
80
−
−
V
Collector Emitter Saturation Voltage
VCE(sat)
IC = 150mA, IB = 15mA, Note 4
−
−
−0.15
V
IC = 500mA, IB = 50mA, Note 4
−
−
−0.5
V
IC = 1A, IB = 100mA, Note 4
−
−
−1.0
V
Base Emitter ON Voltage
VBE(ON)
IC = 500mA, VBE = −0.5V, Note 4
−
−
−1.1
V
Base Emitter Saturation Voltage
VBE(sat)
IC = 150mA, IB = 15mA, Note 4
−
−
−0.9
V
Collector to Base Capacitance
Ccb
VCB = −10V, IE = 0, f = 1MHz
−
−
20
pF
Input Capacitance
Cib
VBE = −0.5V, IC = 0, f = 1MHz
−
−
110
pF
Magnitude of Common Emitter
Small Signal Current Gain
|hfe|
IC = 50mA, VCE = −10V,
f = 100MHz
1.5
−
5.0
−
−
350
ns
−
−
50
ns
−
−
100
ns
Storage Time
ts
Fall Time
tf
Turn On Time
ton
IC [ 500mA, IB1 [ IB2 [ 50mA
IC [ 500mA, IB1 [ 50mA
Note 4. Pulse Test; Pulse Width  300s, Duty Cycle = 1%
Note 1. Pulse Test; Pulse Width 300s, Duty Cycle 2%
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260
(6.6)
Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector/Case
45
.031 (.793)