312

NTE312
N−Channel Silicon Junction
Field Effect Transistor
TO92 Type Package
Description:
The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The
NTE312 comes in a TO−92 package.
Features:
D High Power Gain: 10dB Min at 400MHz
D High Transconductance: 4000 mmho Min at 400MHz
D Low Crss: 1pF Max
D
G
D High (Yfs) / Ciss Ratio (High−Frequency Figure−of−Merit)
S
D Drain and Gate Leads Separated for High Maximum Stable Gain
D Cross−Modulation Minimized by Square−Law Transfer Characteristic
D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment
Absolute Maximum Ratings: (TA = +25WC unless otherwise specified)
Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25WC ), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above +25WC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.88mW/WC
Total Device Dissipation (TC = +25WC), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate Above +25WC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/WC
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65Wto +150WC
Lead Temperature, During Soldering (1/16 Inch from Case for 10sec), TL . . . . . . . . . . . . . . . +260WC
Rev. 10−13
Electrical Characteristics: (TA = +25WC unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate−Source Breakdown Voltage
V(BR)GSS
IG = −1.0mA, VDS = 0
−30
−
−
V
Gate Reverse Current
IGSS
VGS = −20V, VDS = 0
−
−
−1.0
nA
Gate 1 Leakage Current
IG1SS
VG1S = −20V, VDS = 0, TA = +100WC
−
−
−0.5
mA
VDS = 15V, ID = 10mA
−1.0
−
−6.0
V
IDSS
VDS = 15V, VGS = 0, Note 1
5.0
−
15
mA
|yfs|
VDS = 15V, VGS = 0, f = 1kHz
4500
−
7500
mmhos
Re(yis)
100MHz VDS = 15V, VGS = 0
−
−
100
mmhos
400MHz
−
−
1000
mmhos
|yos|
VDS = 15V, VGS = 0, f = 1kHz
−
−
50
mmhos
Re(yos)
100MHz VDS = 15V, VGS = 0
−
−
75
mmhos
400MHz
−
−
100
mmhos
Gate−Source Cutoff Voltage
VGS(off)
ON Characteristics
Zero−Gate Voltage Drain Current
Small−Signal Characteristics
Forward Transfer Admittance
Input Admittance
Output Admittance
Output Conductance
Forward Transconductance
Re(yfs)
VDS = 15V, VGS = 0, f = 400MHz
4000
−
−
mmhos
Input Capacitance
Ciss
VDS = 15V, VGS = 0, f = 1.0MHz
−
−
4.5
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0, f = 1.0MHz
−
−
1.0
pF
100MHz VDS = 15V, VGS = 0
−
−
3.0
mmho
400MHz
−
−
12.0
mmho
100MHz VDS = 15V, ID = 5mA,
RiG = 1kW
400MHz
−
−
2.0
dB
−
−
4.0
dB
100MHz VDS = 15V, ID = 5mA,
RiG = 1kW
400MHz
18
−
−
dB
10
−
−
dB
100MHz VDS = 15V, VGS = 0
−
−
1000
mmhos
400MHz
−
−
4000
mmhos
Input Susceptance
IM(Yis)
Functional Characteristics
Noise Figure
Common Source Power Gain
Output Susceptance
NF
Gps
IM(Yos)
Note 1. tp = 100ms, Duty Cycle = 10%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
G S D
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
NOTE: Drain and Source are interchangeable.