NTE221 MOSFET Dual Gate, N−Channel for VHF TV Receivers Applications TO72 Type Package Description: The NTE221 is an N−channel depletion type, dual−insulated gate, field−effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF−amplifier applications. D G2 Features: D Extremely Low Feedback Capacitance D High Power Gain S, Case G1 Absolute Maximum Ratings: (TA = +25mC unless otherwise specified) Drain−to−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +20V Gate 1−to−Source Voltage, VG1S Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1V to −8V Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V to −8V Gate 2−to−Source Voltage, VG2S Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −8V to 40% of VDS Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −8V to +20V Drain−to−Gate Voltage, VDG1 or VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Pulsed Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Transistor Dissipation (TA = +25mC), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Linearly Above 25mC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/mC Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65m to +175mC Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65m to +175mC Lead Temperature (During Soldering, 1/32” from seating surface, 10sec max), TL . . . . . . . . +265mC Note 1. Pulse test: Pulse Width W 20ms, Duty Cycle W 15%. Electrical Characteristics: (TA = +25mC unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Gate 1−to−Source Cutoff Voltage VG1S(off) VDS = 15V, VG2S = 4V, ID = 200mA − −2 − V Gate 2−to−Source Cutoff Voltage VG2S(off) VDS = 15V, VG1S = 0, ID = 200mA − −2 − V Gate 1 Leakage Current IG1SS VG1S = 20V, VG2S = 0, VDS = 0 − − 1 nA Gate 2 Leakage Current IG2SS VG2S = 20V, VG1S = 0, VDS = 0 − − 1 nA Rev. 10−13 Electrical Characteristics (Cont’d): (TA = +25mC unless otherwise specified) Parameter Symbol Drain Current Test Conditions IDSS Forward Transconductance gfs Min Typ Max Unit VDS = 13V, VG1S = 0, VG2S = 4V − 18 − mA VDS = 13V, ID = 10mA, VG2S = 4V, f = 1kHz − 1000 − mmhos Performance Characteristics: (TA = +25mC, f = 200MHz, Note 2 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Small−Signal, Short Circuit Reverse Transfer Capacitance Crss (Drain−to−Gate 1) at f = 1MHz − 0.02 0.03 pF Output Capacitance Coss − 2.2 − pF Input Capacitance Ciss − 5.5 − pF Input Resistance riss − 1.2 − kW Output Resistance ross − 2.8 − kW Magnitude of Forward Transconductance |Yfs| − 11000 − mmhos − −46 − deg − 20 − dB − 20 − dB Phase Angle of Forward Transadmittance Maximum Available Power Gain MAG Maximum Usable Power Gain (Unneutralized) MUGu Note 3 Power Gain GPS − 17.5 − dB Noise Figure NF − − 5 dB Note 2. VG1S is adjusted for ID = 10mA, Gate 2 at AC ground potential, VDS = 13V, VG2S = 4V. Note 3. Limited by practical design considerations. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Gate 2 Drain Gate 1 45m Source/Case .040 (1.02)