NTE489 Silicon P−Channel JFET Transistor General Purpose AF Amplifier TO92 Type Package Absolute Maximum Ratings: (TA = +255C unless otherwise specified) Gate−Drain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate−Source Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.27mW/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1355C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Lead Temperature (During Soldering, 1/16” from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +3005C Note 1. Geometry is symmetrical. Units may be operated with source and drain leads interchanged. Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 30 − − V − − 200 pA 0.5 − 2.0 V ID = −2mA, VDG = −15V, Note 2 − 15 − pA VDS = −15V, VGS = 0 −2 − −15 mA Static Characteristics Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cutoff Voltage Gate Current Saturation Drain Current V(BR)GSS IG = 15 A, VDS = 0 IGSS VGS(off) IG IDSS VGS = 20V, VDS = 0, Note 2 ID = −1nA, VDS = −15V Dynamic Characteristics Common−Source Forward Transconductance gfs VDS = −15V, VGS = 0, f = 1kHz, Note 3 6000 − 15000 5 mho Common−Source Output Conductance gos VDS = −15V, VGS = 0, f = 1kHz − − 200 5 mho Common−Source Input Capacitance Ciss VDS = −15V, VGS = 0, f = 1MHz − 32 − pF Common−Source Reverse Transfer Capacitance Crss VDS = −15V, VGS = 0, f = 1MHz − 4 − pF Equivalent Short−Circuit Input Noise Voltage en VDS = −10V, ID = −2mA, f = 1kHz − 6 − nV pHz Note 2. Approximately doubles for every 105C increase in TA. Note 3. Pulse test duration = 2ms. Rev. 10−13 D G S .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D G S .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max