NTE NTE326

NTE326
Silicon P–Channel JFET Transistor
General Purpose AF Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +135°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
40
–
–
V
VGS = 20V, VDS = 0
–
–
5
nA
VGS = 20V, VDS = 0, TA = +100°C
–
–
1
µA
ID = 1µA, VDS = 15V
1.0
–
7.5
V
VGS
ID = 0.2mA, VDS = 15V
0.8
–
4.5
V
IDSS
VDS = 15V, VGS = 0, f = 1kHz
2
–
9
mA
Forward Transfer Admittance
|yfs|
VDS = 15V, VGS = 0, f = 1kHz
1500
–
5000
µmho
Output Admittance
|yos|
VDS = 15V, VGS = 0, f = 1kHz
–
–
75
µmho
Input Capacitance
Ciss
VDS = 15V, VGS = 0, f = 1MHz
–
5
7
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0, f = 1MHz
–
1
2
pF
Noise Figure
NF
VDS = 15V, VGS = 0, RG = 1MΩ,
f = 100Hz, BW = 1Hz
–
1.0
2.5
dB
Equivalent Short–Circuit Input Noise
Voltage
en
VDS = 15V, VGS = 0, f = 100Hz,
BW = 1Hz
–
60
115
nV/pHz
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
V(BR)GSS IG = 10µA, VDS = 0
IGSS
VGS(off)
ON Characteristics
Zero–Gate–Voltage Drain Current
Small–Signal Characteristics
Functional Characteristics
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
S D G
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max