NTE5369

NTE5369
Silicon Controlled Rectifier (SCR)
for High Speed Switching,
125 Amp, TO83
Absolute Maximum Ratings:
Repetitive Peak Off−State Voltage (Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Non−Repetitive Peak Off−State Voltage (Note 1), VDSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Repetitive Peak Reverse Voltage (Note 1), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Non−Repetitive Peak Reverse Voltage (Note 1), VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V
Peak Forward Leakage Current, IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Peak Reverse Leakage Current, IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Maximum Average On−State Current (Note 2), IT(AV)
TC = +55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128A
TC = +85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83A
Nominal RMS On−State Current (TC = +25°C, Note 2), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 260A
DC On−State Current (TC = +25°C), IT(DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206A
Peak Non−Repetitive Surge Current (tp = 10ms, Note 3), ITSM
VRM = 0.6VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700A
VRM ≤ 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1950A
I2t Capacity for Fusing (tp = 10ms, Note 3), I2t
VRM = 0.6VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19000A2s
VRM ≤ 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13700A2s
Critical Rate of Rise of On−State Current (Note 4), (di/dt)cr
Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/μs
Non−Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/μs
Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Mean Forward Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Peak Forward Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.23K/W
Thermal Resistance, Case−to−Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.08K/W
Note
Note
Note
Note
1.
2.
3.
4.
De−rating factor of 0.13% per °C is applicable for TJ below +25°C.
Single phase; 50Hz, 180° half−sinewave.
Half−sinewave, +125°C TJ initial.
VD = 67% VDRM, IFG = 2A, tr ≤ 0.5μs, TC = +125°C.
Rev. 12−11
Electrical Characteristics: (TJ = +125°C unless otherwise specified)
Parameter
Maximum Peak On−State Voltage
Symbol
VTM
Test Conditions
Min
Typ
Max Unit
ITM = 280A
−
−
2.3
V
ITM = 384A
−
−
2.6
V
Threshold Voltage
VTO
−
−
1.6
V
Slope Resistance
rT
−
−
2.49
V
200
−
−
V/μs
Critical Rate of Rise of Off-State Voltage
(dv/dt)cr VD = 80% VDRM, Linear Ramp, Gate O/C
Peak Off−State Current
IDRM
Rated VDRM
−
−
20
mA
Peak Reverse Current
IRRM
Rated VRRM
−
−
20
mA
Gate Trigger Voltage
VGT
Rated VDRM, VD = 10V, IT = 3A, TJ = +25°C
−
−
3.0
V
Gate Trigger Current
IGT
−
−
200
mA
Gate Non−Trigger Voltage
VGD
−
−
0.25
V
Holding Current
IH
TJ = +25°C
−
−
600
mA
Gate Controlled Turn−On Delay Time
tgd
−
0.4
1.0
μs
Turn−On Time
tgt
VD = 67% VDRM, ITM = 500A,
di/dt = 10A/μs, IFG = 2A, tr = 0.5μs,
T = +25°C
−
0.8
2.0
μs
Recovered Charge
Qrr
−
50
−
μC
Recovered Charge, 50% Chord
Qra
ITM = 100A, tp = 500μs, di/dt = 10A/μs,
VR = 50V
−
25
45
μC
Reverse recovery Current
Irm
−
15
−
A
Reverse Recovery Time
trr
−
3.0
−
μs
Turn−Off Time
tq
ITM = 100A, tp = 500μs, VR = 50V,
di/dt = 10Α/μs, VDR = 80% VDRM,
dVr/dt = 20V/μs
10
−
15
μs
ITM = 100A, tp = 500μs, VR = 50V,
di/dt = 10Α/μs, VDR = 80% VDRM,
dVr/dt = 200V/μs
20
−
25
μs
1.227 (31.18) Dia
(Across Corners)
.280 (7.11)
.650 (16.51) Max
Cathode
.260 (6.6) Dia Max
Gate
.415 (10.55)
1.810
(45.97)
Max
1.031 (26.18) Dia Max
.500 (12.7) Max
.812
(20.6)
Anode
1/2−20 UNF
(Terminal 3)