NTE NTE5438

NTE5437 & NTE5438
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed
for general purpose high voltage applications where gate sensitivity is required.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, RGK = 1kΩ), VDRM, VRRM
NTE5437 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5438 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
On–State Current (All Conducting Angles, TC = +85°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Average On–State Current (Half Cycle, = 180°, TC = +85°C), IT(AV) . . . . . . . . . . . . . . . . . . . . 5.1A
Non–Repetitive On–State Current, ITSM
Half Cycle, 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88A
Half Cycle, 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
Fusing Current (t= 10ms, Half Cycle), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A2s
Peak Reverse Gate Voltage (IGR = 50µA), VGRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Peak Gate Current (10µs Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Dissipation (10µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Gate Dissipation (20ms Max), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Oprating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Lead Temperature (During Soldering, 1.6mm from case, 10sec Max), TL . . . . . . . . . . . . . . . +250°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4K/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Off–State Leakage Current
Symbol
Test Conditions
IDRM, IRRM VDRM + VRRM = Rated Voltage,
RGK = 1kΩ
Ω
Min
Max
Unit
TJ = +125°C
–
0.5
mA
TJ = +25°C
–
5.0
µA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
On–State Voltage
Symbol
VT
Test Conditions
Min
Max
Unit
IT = 16A, TJ = +25°C
–
1.95
V
On–State Threshold Voltage
VT(TO)
TJ = +125°C
–
1.05
V
On–State Slope Resistance
rT
TJ = +125°C
–
65
mΩ
Gate Trigger Current
IGT
VD = 7V
–
200
µA
Gate Trigger Voltage
VGT
VD = 7V
–
2.0
V
Holding Current
IH
RGK = 1kΩ
–
10
mA
Latching Current
IL
RGK = 1kΩ
–
20
mA
Critical Rate of Voltage Rise
dv/dt
VD = .67 x VDRM, RGK = 1kΩ, TJ = +125°C
5
–
V/µs
Critical Rate of Current Rise
di/dt
IG = 10mA, diG/dt = 0.1A/µs, TJ = +125°C
100
–
A/µs
Gate Controlled Delay Time
tgd
IG = 10mA, diG/dt = 0.1A/µs
–
500
ns
Commutated Turn–Off Time
tq
TC = +85°C, VD = .67 x VDRM, VR = 35V, IT = 5.1A
–
100
µs
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
Anode
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Cathode
.100 (2.54)
Gate
Anode