239

NTE239
Silicon Controlled Switch (SCS)
Description:
The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for
a numerical indicator tube and switching applications.
Features:
D Selective Breakover Voltage
D Low ON Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage (Open Emitter), VCBO
NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -70V
Collector-Emitter Voltage (NPN Only, RBE = 10kΩ), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector-Emitter Voltage (PNP Only, Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -70V
Emitter-Base Voltage (Open Collector), VEBO
NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -70V
DC Collector Current (NPN Only), IC
Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA
Peak (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA
Emitter Current, IE
NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -175mA
PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA
Peak Emitter Current (tp ≤ 10μs, δ = 0.01), IEM
NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.5A
PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Total Power Dissipation (TA ≤ +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Ambient Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +200°C
Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450K/W
Note 1. Provided the IE rating is not exceeded.
Note 2. During switching on, the device can withstand the discharge of a capacitor o a maximum
value of 500pF. This capacitor is charged when the transistor is in cut-off condition, with a
collector supply voltage of 160V an a serise resistance of 100kΩ.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 70V, RBE = 10kΩ
-
-
100
nA
VCE = 70V, RBE = 10kΩ, TJ = +150°C
-
-
10
μA
VEB = 5V, IC = 0, TJ = +150°C
-
-
10
μA
Inividual NPN Transistor
Collector Cutoff Current
Emitter Cutoff Current
ICER
IEBO
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Inividual NPN Transistor (Cont'd)
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 10mA, IB = 1mA
-
-
500
mV
Base-Emitter Saturation Voltage
VBE(sat)
IC = 10mA, IB = 1mA
-
-
900
mV
hFE
VCE = 2V, IC = 10mA
50
-
-
100
-
-
MHz
DC Current Gain
Transition Frequency
fT
VCE = 2V, IC = 10mA, f = 100MHz
Collector Capacitance
Cc
VCB = 20V, IE = Ie = 0
-
-
5
pF
Emitter Capacitance
Ce
VEB = 1V, IC = Ic = 0
-
-
25
pF
Individual PNP Transistor
Collector Cutoff Current
ICEO
-VCE = 70V, IB = 0, TJ = +150°C
-
-
-10
μA
Emitter Cutoff Current
-IEBO
-VEB = 70V, IC = 0, TJ = +150°C
-
-
-10
μA
hFE
-VCB = 5V, IE = 1mA
3
-
15
VAK
IA = 50mA, IAG = 0, RKG-K = 10kΩ
-
-
1.4
V
IA = 50mA, IAG = 0, RKG-K = 10kΩ,
TJ = -55°C
-
-
1.9
V
IA = 1mA, IAG = 10mA, RKG-K = 10kΩ
-
-
1.2
V
IH
VBB = -2V, IAG = 0, RKG-K = 10kΩ
-
-
1.0
mA
ton
VKG-K = -0.5 to 4.5V, RKG-K = 1kΩ
-
-
0.25
μs
VKG-K = -0.5 to 0.5V, RKG-K = 10kΩ
-
-
1.5
μs
RKG-K = 10kΩ
-
-
15
μs
DC Current Gain
Combined Device
Forward On-State Voltage
Holding Current
Switching Times
Turn-On Time
Turn-Off Time
toff
.220 (5.58) Dia
4
.185 (4.7) Dia
Emitter (PNP)
3
Base (PNP)/
Collector (NPN)
.190
(4.82)
2
.030 (.762)
Collector (PNP)/
Base (NPN)
Emitter (NPN)
1
.500
(12.7)
Min
Transistor Basing
4
Anode
.018 (0.45) Dia
3
2
1
Anode/Gate
3
2
Cathode/Gate
45°
Cathode
1
4
.040 (1.02)
Thyristor Basing