NTE NTE239

NTE239
Silicon Controlled Switch (SCS)
Description:
The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for
a numerical indicator tube and switching applications.
Features:
D Selective Breakover Voltage
D Low ON Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO
NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –70V
Collector–Emitter Voltage (NPN Only, RBE = 10kΩ), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector–Emitter Voltage (PNP), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –70V
Emitter–Base Voltage, VEBO
NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –70V
Emitter Current, IE
NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –100mA
PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak Emitter Current (tp ≤ 1ms, δ = 0.05), IEM
NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –500mA
PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Collector Current (NPN Only), IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
NPN Transistor
Collector Cutoff Current
ICER
VCE = 70V, RBE = 10kΩ
–
10
100
nA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
30
1000
nA
DC Current Gain
hFE
VCE = 2V, IC = 10mA
50
180
–
–IEBO
–VEB = 70V, IC = 0
–
0.05
100
hFE
VCB = 0, IE = 1mA
0.72
–
2.5
VAK
IA = 50mA, IC = 0, RBE = 10kΩ
–
1.05
1.4
V
Holding Current
IH
RBE = 10kΩ, IC = 10mA, –VBB
= 2V
0.1
0.5
1.0
mA
Turn–Off Time
toff
RBE = 10kΩ
–
6
12
µs
PNP Transistor
Emitter Cutoff Current
DC Current Gain
nA
Combined Device
Anode–Cathode Voltage
.220 (5.58) Dia
4
.185 (4.7) Dia
Emitter (PNP)
3
Base (PNP)/
Collector (NPN)
.190
(4.82)
2
.030 (.762)
Collector (PNP)/
Base (NPN)
Emitter (NPN)
1
.500
(12.7)
Min
Transistor Basing
4
Anode
.018 (0.45) Dia
3
Anode/Gate
2
2
1
3
Cathode/Gate
Cathode
45°
1
Thyristor Basing
4
.040 (1.02)