Una. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 110/111RKI SERIES PHASE CONTROL THYRISTORS Stud Version Features High current and high surge ratings Hermetic ceramic housing 110A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters T(AV) @T C I2t TJ 110 A 90 °C A @50Hz 2080 A @60Hz 2180 A @50Hz 21.7 KA2s @60Hz 19.8 KA2S 400 to 1200 V VDR«'VRRM <q Units 172 'T(RMS) 'TSM 110/111RKI typical 110 MS -40 to 140 "C Quality Semi-Conductors case style TO-209AC (TO-94) ., LJnc. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA (212) 227-6005 FAX: (973) 376-8960 Blocking Parameter dv/dt Maximum critical rate of rise of off-state voltage 'RRM IDRM Max- 110/111RK1 Pealt reuerse and off-state leakage current Units Conditions 500 V/us 20 mA Tj = Tj max. linear to B0% rated VonM ' L =• TJ ma*' rated VDHM'VRR* aPP|ie(1 Triggering Parameter 110/111RKI PGM Maximum peak gate power 12 PG(AV) Maximum average gate power 3.0 'QM Max. peak positive gate current 3.0 +VOM Maximum peak positive Maximum peak negative TYP. Tj = Tj max. t < 6ms V T j - TJ, max, t p < 5ms DC gate current required 180 lo trigger 80 MAX. Tj = - 40'C 120 mA T = 25'C V Tj = 14Q'C T =-40°C '' T j = 25'C 40 VGT DC gate voltage required 2.5 to trigger 1.6 2 1 IGD VGD Tj - Tj max, f = SOHz, d% = 50 A 10 gate voltage IGT Tj = Tj max, I < 5ms w 20 gate voltage -VGM Units Conditions Tj = 140'C DC gate current not to trigger 6.0 DC gate voltage not to trigger Max. required gate trigger/ curvoltage are the lowest value which wiH trigger all units 12V anode-to-cathode applied renl/ 0.25 mA V Tj = Tj max Max. gate current/ voltage not to trigger is the max. value which win not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter 110/1 11RKI Tj Max. operating temperature range -4010140 T . Max. storage temperature range -4010160 RmJC Units •c Max. thermal resistance, DC operation 0.27 junction to case R([lCS K/W Max. thermal resistance, Mounting surface, smooth, flat and greased 0.1 case to heatsink T Conditions Mounting torque, ±10% Non lubricated threads 15.5 (137) 14 Mm (Ibf-in) Lubricated threads (120) wt Approximate weight Case style 130 g TO-209AC(TO-94) Quality Semi-Conductors See Outline Table <$E.mL~(2on.auci o'i. , Dna. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number VDRM^RW max- VRSM , maximum non- repetitive peak and off-state voltage V V 40 400 500 80 800 900 120 1200 1300 110/111RKI WRRM max@ Tj = Tj max. inA repetitive peak voltage Code 20 On-state Conduction 110/111RKI Parameter 'TIAVI Max- auer39e on-state current @ Case temperature 'TIRUSI ITSM I2t ! 2 Vt Max- RMS on-sta'e Units Conditions 110 A 90 •c DC @ 83"C case temperature 172 current Max. peak, one-cycle 2080 non-repetitive surge current 2180 Maximum I2t for fusing t = 10ms No voltage t = 8.3ms reapplied 1750 t=10ms 100%VBRU 1830 t = 8.3ms reapplied Sinusoidal half wave, 21.7 t * 1 Qms No voltage Initial Tj = Tj max. 19.8 t - 8.3ms reapplied 15.3 t=10ms 100%VRRM 14.0 t = 8.3ms reapplied 217 Maximum l2\/t for fusing 180* conduction, half sine wave A KA2s KA2\'s t = 0.1 to 10ms. no voltage reapplied V T(TO)] Low level value of threshold (16.7% x i x IT(AV) < 1 < * x IT(AV)), Tj = Tj max. 0.82 voltage V V T(TO)2 High level value of threshold 1.02 (l> nxl^JJ^Tj max. voltage r (1 Low level value of on-state (16.7% x it x IT(AV) < I < n x IT(AV)), Tj ^ Tj max. 2.16 slope resistance r|2 mSJ High level value of on-state 1.70 (l^xl^.VTjma, slope resistance VTU Max. on-state voltage 1.57 IH Maximum holding current 200 IL Typical latching current 400 V mA I k = 350A, Tj ~ Tj max., 1 = 10ms sine pulse Tj = 25'C, anode supply 6V resistive load Switching Parameter di/dt 110/111RK1 Max. non-repetitive rate of nse of turned-an current td Typical delay time 300 Units Conditions A/MS Typical turn-off time Quality Semi-Conductors 110 Tj = Tj max, anode voltage S 80% VDRM Gate current 1A, di /dt = 1 A/ps 1 us t Gate drive 20V, 20ft, tr £ 1 1JS Vd = °-87%vORM.V2s'c ITM = 50A. Tj = Tj max., di/dt = -5A/us, VB = 50V dv/dt = 20V/M3, Gate 0V 2SH