2378

NTE2378
MOSFET
N−Channel Enhancement Mode,
High Speed Switch
TO3P Type Package
Description:
The NTE2378 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
D
Features:
D Low ON−State Resistance
D Very High−Speed Switching
D Converters
G
S
Absolute Maximum Ratings: (TA = +255C)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V
DC Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Pulsed Drain Current (Note 1), IDP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Allowable Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W
Maximum Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Note 1. Pulse Width 3 103s, Duty Cycle 3 1%.
Note 2. Be careful in handling the NTE2378 because it has no protection diode between gate and
source.
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Drain−Source Breakdown Voltage
Symbol
Test Conditions
V(BR)DSS ID = 1mA, VGS = 0
Min
Typ
Max
Unit
900
−
−
V
Zero−Gate Voltage Drain Current
IDSS
VGS = 0, VDS = 900V
−
−
1.0
mA
Gate−Source Leakage Current
IGSS
VDS = 0, VGS = +30V
−
−
+100
nA
Cutoff Voltage
VGS(off)
VDS = 10V, ID = 1mA
2
−
3
V
Static Drain−Source On Resistance
RDS(on)
VGS = 10V, ID = 2A
−
2.8
3.6
+
gfs
VDS = 20V, ID = 2A
1.0
2.0
−
mho
Forward Transconductance
Rev. 10−13
Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
700
−
pf
−
300
−
pf
Input Capactiance
Ciss
Output Capacitance
Coss
Reverse Transfer Capactiance
Crss
−
170
−
pf
Turn−On Time
td(on)
−
15
−
ns
−
35
−
ns
−
200
−
ns
−
65
−
ns
−
−
1.8
V
Rise Time
tr
Turn−Off Delay Time
Fall Time
td(off)
VDS = 20V, f = 1MHz
VDD = 200V, ID = 2A,
VGS = 10V, RGS = 50+
tf
Diode Forward Voltage
VSD
IS = 5A, VGS = 0
.190 (4.82)
.615 (15.62)
D
.787
(20.0)
.591
(15.02)
.787
(20.0)
.126
(3.22)
Dia
G
D
S
.215 (5.47)