NTE2378 MOSFET N−Channel Enhancement Mode, High Speed Switch TO3P Type Package Description: The NTE2378 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. D Features: D Low ON−State Resistance D Very High−Speed Switching D Converters G S Absolute Maximum Ratings: (TA = +255C) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V DC Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Pulsed Drain Current (Note 1), IDP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Allowable Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W Maximum Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Note 1. Pulse Width 3 103s, Duty Cycle 3 1%. Note 2. Be careful in handling the NTE2378 because it has no protection diode between gate and source. Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Symbol Test Conditions V(BR)DSS ID = 1mA, VGS = 0 Min Typ Max Unit 900 − − V Zero−Gate Voltage Drain Current IDSS VGS = 0, VDS = 900V − − 1.0 mA Gate−Source Leakage Current IGSS VDS = 0, VGS = +30V − − +100 nA Cutoff Voltage VGS(off) VDS = 10V, ID = 1mA 2 − 3 V Static Drain−Source On Resistance RDS(on) VGS = 10V, ID = 2A − 2.8 3.6 + gfs VDS = 20V, ID = 2A 1.0 2.0 − mho Forward Transconductance Rev. 10−13 Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − 700 − pf − 300 − pf Input Capactiance Ciss Output Capacitance Coss Reverse Transfer Capactiance Crss − 170 − pf Turn−On Time td(on) − 15 − ns − 35 − ns − 200 − ns − 65 − ns − − 1.8 V Rise Time tr Turn−Off Delay Time Fall Time td(off) VDS = 20V, f = 1MHz VDD = 200V, ID = 2A, VGS = 10V, RGS = 50+ tf Diode Forward Voltage VSD IS = 5A, VGS = 0 .190 (4.82) .615 (15.62) D .787 (20.0) .591 (15.02) .787 (20.0) .126 (3.22) Dia G D S .215 (5.47)