NTE2974 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Isolated Type Package Features: D Low On−State Resistance: RDS(on) = 1.1" Max (VGS = 10V, ID = 3A) D Low Input Capacitance: Ciss = 1150pF Typ D High Avalanche Capability Ratings D Isolated TO220 Type Package D G S Absolute Maximum Ratings: (TA = +255C unless otherwise specified) Drain−to−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate−to−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Drain Current, ID DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6.0A Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +24A Total Power Dissipation, PT TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W TA = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W Single Avalanche Current (Note 2), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0A Single Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mJ Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Note 1. PW 3 10+s, Duty Cycle 3 1%. Note 2. Starting Tch = +255C, RG = 25", VGS = 20V " 0. Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain−to−Source On−State Resistance RDS(on) VGS = 10V, ID = 3A − 0.8 1.1 " Gate−to−Source Cutoff Voltage VGS(off) VDS = 10V, ID = 1mA 2.5 − 3.5 V 2.0 − − S Forward Transfer Admittance |yfs| VDS = 10V, ID = 3A Drain Leakage Current IDSS VDS = 600V, VGS = 0 − − 100 +A Gate−to−Source Leakage Current IGSS VGS = +30V, VDS = 0 − − +100 nA Rev. 10−13 Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − 1150 − pF Input Capacitance Ciss Output Capacitance Coss − 260 − pF Reverse Transfer Capacitance Crss − 60 − pF Turn−On Delay Time td(on) − 15 − ns − 15 − ns td(off) − 75 − ns tf − 13 − ns − 40 − nC Rise Time tr Turn−Off Delay Time Fall Time VDS = 10V, VGS = 0, f = 1MHz VGS = 10V, VDD = 150V, ID = 3A, RG = 10", RL = 37.5" Total Gate Charge QG Gate−to−Source Charge QGS − 6 − nC Gate−to−Drain Charge QGD − 20 − nC Diode Forward Voltage VF(S−D) IF = 6A, VGS = 0 − 1.0 − V Reverse Recovery Time trr IF = 6A, di/dt = 50A/+s − 370 − ns Reverse Recovery Charge Qrr − 1.5 − +C VGS = 10V, ID = 6A, VDD = 480V .420 (10.67) Max .110 (2.79) Isol .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain