NTE NTE2974

NTE2974
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Low On–State Resistance: RDS(on) = 1.1Ω Max (VGS = 10V, ID = 3A)
D Low Input Capacitance: Ciss = 1150pF Typ
D High Avalanche Capability Ratings
D Isolated TO220 Type Package
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–to–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate–to–Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, ID
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6.0A
Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±24A
Total Power Dissipation, PT
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W
Single Avalanche Current (Note 2), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0A
Single Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. PW ≤ 10µs, Duty Cycle ≤ 1%.
Note 2. Starting Tch = +25°C, RG = 25Ω, VGS = 20V → 0.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
0.8
1.1
Ω
Drain–to–Source On–State Resistance
RDS(on)
VGS = 10V, ID = 3A
Gate–to–Source Cutoff Voltage
VGS(off)
VDS = 10V, ID = 1mA
2.5
–
3.5
V
2.0
–
–
S
Forward Transfer Admittance
|yfs|
VDS = 10V, ID = 3A
Drain Leakage Current
IDSS
VDS = 600V, VGS = 0
–
–
100
µA
Gate–to–Source Leakage Current
IGSS
VGS = ±30V, VDS = 0
–
–
±100
nA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
1150
–
pF
Input Capacitance
Ciss
Output Capacitance
Coss
–
260
–
pF
Reverse Transfer Capacitance
Crss
–
60
–
pF
Turn–On Delay Time
td(on)
–
15
–
ns
–
15
–
ns
td(off)
–
75
–
ns
tf
–
13
–
ns
–
40
–
nC
Rise Time
tr
Turn–Off Delay Time
Fall Time
VDS = 10V, VGS = 0, f = 1MHz
VGS = 10V, VDD = 150V, ID = 3A,
RG = 10Ω,
Ω RL = 37.5Ω
Ω
Total Gate Charge
QG
Gate–to–Source Charge
QGS
–
6
–
nC
Gate–to–Drain Charge
QGD
–
20
–
nC
Diode Forward Voltage
VF(S–D)
IF = 6A, VGS = 0
–
1.0
–
V
Reverse Recovery Time
trr
IF = 6A, di/dt = 50A/µs
–
370
–
ns
Reverse Recovery Charge
Qrr
–
1.5
–
µC
VGS = 10V, ID = 6A, VDD = 480V
.420 (10.67)
Max
.110 (2.79)
Isol
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain