1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 50 V IO Average Rectified Current 200 mA IF DC Forward Current 400 mA if Recurrent Peak Forward Current 600 mA if(surge) Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 4.0 -65 to +200 A A °C 175 °C Tstg TJ Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units 1N4454 500 3.33 300 mW mW/°C °C/W 1N4454 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions BV Breakdown Voltage I R = 5.0 µA IR Reverse Current VF Forward Voltage CO Diode Capacitance VR = 50 V VR = 50 V, TA = 150°C I F = 250 µA I F = 1.0 mA I F = 2.0 mA I F = 10 mA VR = 0, f = 1.0 MHz TRR Reverse Recovery Time I F = 10 mA, VR = 1.0 V, I rr = 1.0 mA, RL = 100 Ω Min Max 75 505 550 610 Units V 100 100 575 650 710 1.0 4.0 nA µA mV mV mV V pF 4.0 nS 1N4454 High Conductance Ultra Fast Diode