BAT54V SCHOTTKY DIODE SOT-563 FEATURES Surface mount schottky barrier diode arrays 1 Marking: KAV Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit VRRM VRWM VR 30 V Average Rectified Output Current IO 200 mA Power Dissipation PD 150 mW Thermal Resistance Junction to Ambient Air RθJA 833 ℃/W Storage temperature TSTG -65-125 ℃ Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage Forward Total leakage current voltage capacitance Reverse recovery time Symbol V(BR)R IR VF CT t rr Test conditions IR= 100μA MIN MAX UNIT 30 V VR=25V 2 uA IF=1mA 320 IF=10mA 400 IF=30mA 500 IF=100mA 1000 VR=1V,f=1MHz IF=10mA, IR=10mA~1mA RL=100Ω mV 10 pF 5 nS 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 BAT54V Typical Characteristics 2 JinYu semiconductor www.htsemi.com Date:2011/ 05