Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBT1015
PNP SILICON TRANSISTOR
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR

FEATURES
* Collector-Emitter Voltage: BVCEO= -50V
* Collector current up to 150mA
* High hFE linearity
* Complement to MMBT1815
ORDERING INFORMATION

Ordering Number
Note:

MMBT1015G-x-AC3-R
MMBT1015G-x-AE3-R
MMBT1015G-x-AL3-R
MMBT1015G-x-AN3-R
MMBT1015G-x-AQ3-R
Pin assignment: E: Emitter
B: Base
Package
SOT-113
SOT-23
SOT-323
SOT-523
SOT-723
C: Collector
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
MARKING
PACKAGE
SOT-23
Y
MARKING
GR
BL
A4YG
A4GG
A4BG
SOT-113 / SOT-323 / SOT-523
SOT-723
A4G
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MMBT1015

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SOT-23
Collector Dissipation SOT-523/SOT-113/SOT-323
SOT-723
Collector Current
Base Current
SYMBOL
VCBO
VCEO
VEBO
RATINGS
-50
-50
-5
250
200
190
-150
-50
PC
IC
IB
UNIT
V
V
V
mW
mA
mA
Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
ICBO
IEBO
hFE1
hFE2
fT
COB
DC Current Gain
Transition Frequency
Output Capacitance
Noise Figure

NF
TEST CONDITIONS
IC = -100μA, IE = 0
IC = -10mA, IB = 0
IE = -10μA, IC = 0
IC = -100mA, IB = -10mA
IC = -100mA, IB = -10mA
VCB = -50V, IE = 0
VEB = -5V, IC = 0
VCE = -6V, IC = -2mA
VCE = -6V, IC = -150mA
VCE = -10V, IC = -1mA
VCB = -10V, IE = 0, f = 1MHz
IC = -0.1mA, VCE = -6V
RG= 1kΩ, f = 100Hz
MIN
-50
-50
-5
TYP
-0.1
120
25
80
MAX UNIT
V
V
V
-0.3
V
-1.1
V
-100
nA
-100
nA
700
4.0
7.0
MHz
pF
0.5
6
dB
CLASSIFICATION OF hFE1
RANK
RANGE
Y
120-240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
GR
200-400
BL
350-700
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
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Static Characteristics
-300
IB=-15mA
DC Current Gain
3
10
IB=-10mA
IB=-5mA
V CE =-6V
-240
2
10
-180
IB=-1mA
-120
IB=-0.5mA
1
10
IB=-0.3mA
IB=-0.2mA
-60
IB=-0.1mA
0
-1
-2
-3
-4
-5
-6
Collector-Emitter Voltage ( V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0
10
-1
-10
0
-10
1
-10
2
-10
3
-10
Collector Current, Ic (mA)
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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