UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BVCEO= -50V * Collector current up to 150mA * High hFE linearity * Complement to MMBT1815 ORDERING INFORMATION Ordering Number Note: MMBT1015G-x-AC3-R MMBT1015G-x-AE3-R MMBT1015G-x-AL3-R MMBT1015G-x-AN3-R MMBT1015G-x-AQ3-R Pin assignment: E: Emitter B: Base Package SOT-113 SOT-23 SOT-323 SOT-523 SOT-723 C: Collector Pin Assignment 1 2 3 E B C E B C E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel MARKING PACKAGE SOT-23 Y MARKING GR BL A4YG A4GG A4BG SOT-113 / SOT-323 / SOT-523 SOT-723 A4G www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-015.J MMBT1015 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SOT-23 Collector Dissipation SOT-523/SOT-113/SOT-323 SOT-723 Collector Current Base Current SYMBOL VCBO VCEO VEBO RATINGS -50 -50 -5 250 200 190 -150 -50 PC IC IB UNIT V V V mW mA mA Junction Temperature TJ 125 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current SYMBOL BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) ICBO IEBO hFE1 hFE2 fT COB DC Current Gain Transition Frequency Output Capacitance Noise Figure NF TEST CONDITIONS IC = -100μA, IE = 0 IC = -10mA, IB = 0 IE = -10μA, IC = 0 IC = -100mA, IB = -10mA IC = -100mA, IB = -10mA VCB = -50V, IE = 0 VEB = -5V, IC = 0 VCE = -6V, IC = -2mA VCE = -6V, IC = -150mA VCE = -10V, IC = -1mA VCB = -10V, IE = 0, f = 1MHz IC = -0.1mA, VCE = -6V RG= 1kΩ, f = 100Hz MIN -50 -50 -5 TYP -0.1 120 25 80 MAX UNIT V V V -0.3 V -1.1 V -100 nA -100 nA 700 4.0 7.0 MHz pF 0.5 6 dB CLASSIFICATION OF hFE1 RANK RANGE Y 120-240 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw GR 200-400 BL 350-700 2 of 4 QW-R206-015.J MMBT1015 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS Static Characteristics -300 IB=-15mA DC Current Gain 3 10 IB=-10mA IB=-5mA V CE =-6V -240 2 10 -180 IB=-1mA -120 IB=-0.5mA 1 10 IB=-0.3mA IB=-0.2mA -60 IB=-0.1mA 0 -1 -2 -3 -4 -5 -6 Collector-Emitter Voltage ( V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 10 -1 -10 0 -10 1 -10 2 -10 3 -10 Collector Current, Ic (mA) 3 of 4 QW-R206-015.J MMBT1015 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-015.J